本論文將針對電晶體之高頻特性與大訊號操作下之非線性現象進行分析與探討。鑒於III-V族化合物半導體所具備之良好高頻特性，及其應用於高頻電路設計之優勢，本研究之待測元件採用0.15μm砷化銦鎵製程之假晶式高電子遷移率電晶體，由穩懋半導體公司提供。首先，以高頻量測萃取電晶體小訊號模型之各元件參數值，再進一步將各偏壓下之等效模型完整建立。根據內質元件物理意義及其與輸出電流之關係，將萃取之gm與gds透過積分與數學推導過程，建立電晶體之射頻電流－電壓曲線RF I-V，藉此完整的描述電晶體於高頻操作之輸出特性。
電晶體之非線性特性可歸因於非線性輸入電容Cgs與Cgd，以及非線性相依電流源所造成。本論文建立之高頻非線性模型以傳統Angelov模型為基礎，並且結合論文中提出之RF I-V與高頻量測所萃取之電晶體內質參數，將各非線性源於高頻操作之特性透過擬合的方式，以非線性方程式表達。藉此將電晶體之輸出特性完整的模型化，有效改善傳統非線性模型於高頻之應用。
再者，透過實驗數據以及模擬結果驗證模型之準確性。本論文建立之小訊號模型與高頻非線性模型皆與實驗結果有極佳的吻合度，較傳統非線性模型更準確表達電晶體輸出特性，成功的將高頻效應與非線性特性整合於模型中。

In this thesis, the investigation focuses on the analysis of the high frequency characteristics and the nonlinearity of the transistors. In view of the III-V semiconductors which have excellent high frequency performance and the advantage for high frequency circuit design, the 0.15μm InGaAs based pseudomorphic high electron mobility transistors provided by WIN semiconductor Corp. were used in this study. The high frequency measurement was utilized to extract both extrinsic and intrinsic components of the transistors, and further to establish the small signal equivalent model in each bias condition. According to the physical definition of the extracted gm, gds and the relationship with the output current, RF I-V curves could be determined through the integration procedure.
The nonlinearity of the transistors can be attributed to the nonlinear input capacitance Cgs and Cgd, and the voltage dependent current source. The high frequency nonlinear models proposed in this thesis were based on classic Angelov model. For the high frequency application, the frequency dependent characteristics of the nonlinear sources would be taken into consideration through the combination of the RF I-V curves and extracted intrinsic components. Thus, the nonlinearities could be able to describe by nonlinear function through the fitting process and model the output performance completely.
The accuracy of the models could be confirmed through the comparison between the simulation and the measurement result. Obviously, the high frequency models which include the high frequency effect and the nonlinear characteristics have excellent agreement with the experimental data.

目錄 I
圖目錄 III
表目錄 VI
第一章 緒論 1
1.1 研究動機 1
1.2 發展概述 2
1.3 論文架構 3
第二章 pHEMT特性分析與量測系統、去嵌化技術介紹 5
2.1 簡介 5
2.2 電晶體物理結構與特性 5
2.3 量測系統 9
2.3.1待測電晶體規格 9
2.3.2直流量測 11
2.3.3高頻小訊號量測 12
2.3.4高頻功率量測 14
2.3.5負載拉移量測 17
2.4 去嵌化技術 18
2.5 負載拉移量測原理 21
2.6 主動元件非線性特性 22
2.6.1 諧波失真(Harmonic Distortion) 22
2.6.2 1dB增益壓縮點 (1dB Compression Point；P1dB) 22
2.6.3 交互調變失真(Intermodulation Distortion；IMD) 24
2.6.4 三階截距點 (Third-Order Intercept Point；OIP3) 25
第三章 pHEMT小訊號模型之建立 27
3.1 簡介 27
3.2 小訊號等效模型架構分析 27
3.3 外質參數萃取 30
3.4 內質參數萃取 33
3.5 pHEMT小訊號模型驗證與分析 37
3.5.1 閘極寬度75μm之pHEMT小訊號模型建立與驗證 45
3.5.2 閘極寬度50μm之pHEMT小訊號模型建立與驗證 47
第四章 pHEMT高頻非線性模型與RF I-V之建立與驗證 49
4.1 簡介 49
4.2 RF-IV之建立與分析 49
4.3 高頻非線性模型介紹 57
4.4 高頻非線性模型之建立與分析 58
4.4.1 閘極寬度75μm之pHEMT高頻非線性模型建立與驗證 70
4.4.2 閘極寬度50μm之pHEMT高頻非線性模型建立與驗證 76
第五章 結論 82
參考文獻 83

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