臺灣博碩士論文加值系統

本篇論文中使用非對稱p/n接面來製作矽微環形電光調變器；利用p/n接面尺寸上的非對稱，將光模態限制在p型單晶矽部份，使得模態具有較小的等效模態損失係數且在電性上具有較大的載子遷移率。論文中使用國家奈米元件實驗室之COMS點35製程，製程共11道光罩，製作非對稱p/n接面之矽微環形電光調變器，並在製作完成時，以聚焦離子束技術來觀測元件橫截面，以檢驗製程。元件完成後，藉由IV、CV量測，以討論非對稱p/n接面特性、元件寄生電容、元件串聯電阻等…影響，並透過網路分析儀量測分析，元件操作速度可達30GHz，有達成高速的目標。

目錄
Chapter 1. 緒論..........................................................................................1
Chapter 2. 元件介紹與製程簡介..............................................................3
2-1 元件介紹與製程佈局...................................................................3
2-1.1 元件橫截面介紹.................................................................3
2-1.2 元件製程佈局.....................................................................4
2-2 元件光罩介紹...............................................................................6
2-3 PN接面離子佈植製程參數模擬設計.......................................19
Chapter 3. PN元件製作流程與製程結果..............................................22
3-1 元件製作流程.............................................................................22
3-2 元件製程結果.............................................................................51
3-2.1 die H之聚焦離子束觀測結果.........................................53
3-2.2 die F之聚焦離子束觀測結果..........................................58
Chapter 4. 電性量測................................................................................62
4-1 CV量測......................................................................................64
4-1.1 p/n接面CV理論.............................................................64
4-1.2 元件實際量測之CV結果..............................................66
4-1.2.1 CV量測結果討論 – CMP研磨均勻度...............68
4-1.2.2 CV量測結果討論 – 元件寄生電容....................69
4-1.2.3 CV量測結果討論 – 圓盤形測試圖案...............76
4-2 IV量測........................................................................................78
4-2.1 p/n接面IV理論...............................................................78
4-2.2 順向偏壓(Forward Bias)...................................................80
4-2.3 逆向偏壓(Reverse Bias)...................................................84
4-3 高頻電性量測.............................................................................86
Chapter 5. 結論與未來展望....................................................................89
5-1 改善元件寄生電容.....................................................................89
5-2 優化波導線邊粗糙度 (Line Edge Roughness).........................90
5-3 改善間隙間距.............................................................................91
5-4 改善元件操作速度.....................................................................92
附錄A. 電子束直寫實際曝光之間隙寬度...........................................93
附錄B. 高頻電性量測結果...................................................................97
附錄C. 對稱PN接面之矽微環形電光調變器其製程流程表............121
附錄D. 金氧半電容之微環形電光調製器元件製作..........................133
參考文獻................................................................................................137
 

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