為了提昇發光二極體的光萃取效率，本論文提出
兩個新的結構，一為陣列型高反射鏡發光二極體，另
一為具有光子晶體特性之發光二極體。使用嚴格耦合
波分析理論計算氮化鎵發光二極體內鑲嵌微型結構之
光萃取效率與遠場分佈，並探討不同發光二極體結構
之設計對光萃取效率的影響;本論文共分析四種結構，
圖案化藍寶石基板(patterned sapphire substrate)發光二極
體(PSS-LED)、SiO欲圖案化(patterned SiO欲)發光二極體(P-
SiO欲-LED)、陣列型高反射鏡(micro mirror array)發光二極
體(MMA-LED)與陣列型自我複製式光子晶體(auto-cloned
photonic crystal array)發光二極體(APhC-LED)等。根據
我們的理論計算，APhC-LED有最好的光萃取效率，高
達83.4%，相較於一般LED，提昇效率約584%。
歩

In order to enhance light extraction eciency, we pro-
posed two new structures in this paper, micro mirror array and auto-cloned photonic crystal array embedded in GaN.
Light extraction eciency and far eld of GaN-LED with embedded micro-structure were studied using rigorous coupled-wave analysis(RCWA) simulation. Besides, we also investigated the dependence between light extraction efficiency and structural parameters of micro-structure embedded in GaN-LED. Patterned sapphire substrate(PSS)-LED, patterned SiO欲(P-SiO欲)-LED,micro-mirror array(MMA)-LED, auto-cloned photonic crystal array(APhC)-LED were compared in this paper. According to model calculation and analysis, the APhC-LED had the best light extraction eciency, 83.4%, and the enhancement effciency compared with conventional LED was 584%.

第一章 導論
第二章 模擬流程
第三章 具不同提昇光萃取效率之模擬結果與討論
第四章 不同結構比較
第五章 結論與未來展望

[1]E. F. Shubert,Light emitting diodes. Cambridge,2006.
[2]X. H. Wu,et.al.,"Defect stucutre of metal organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3,"Journal of Applied Physics, vol.80, 1996.
[3]S. Keller,et.al.,"Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition,"Applied physics letter, vol. 68,1996.
[4]D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, “Enhanced Output Power of Near-Ultraviolet InGaN–GaN LEDs Grown on Patterned Sapphire Substrates, ” IEEE PHOTONICS TECHNOLOGY LE,TTERS, vol. 17, no. 2, 2005.
[5]S. M. Kim, J. B. Kim, J. Jhin, J. H. Baek, I. H. Lee, and G. Y. Jung, “Optical and Structural Properties of InGaN–AlGaN Ultraviolet Light-Emitting Diodes, ” IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 20, no. 23, 2008.
[6] M. K. Kwon, J. Y. Kim, I. K. Park, K. S. Kim, G. Y. Jung, S. J. Park, J. W. Kim, and Y. C. Kim, “Enhanced emission efficiency of GaN/InGaN multiple quantum well light-emitting diode with an embedded photonic
crystal, ” Appl. Phys. Lett., vol. 92, p. 251110, 2008.
[7]A. A. Erckak, D.J. Ripin, P. Rakich, and J. D. Joannopoulos, “Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode,” Appl. Phys. Lett., vol. 78, p. 563, 2001.
[8]T. N. Oder, K. H. Kim, and J. Y. Lin, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett.,
vol. 84, p. 466, 2004.
[9]S. J. Chang,et.al.,"Nitide-based LEDs with a hybrid Al mirror+TiO2/SiO2 DBR backside reflector," Journal of lightwave technology, vol. 26,2008.
[10]I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thin-film light-emitting diodes,” Appl. Phys. Lett., vol. 63, no. 16, p. 2174,1993.
[11]C. Y. Huang,et.al.,"light extraction enhancement for InGaN/GaN LED by three dimensional auto-cloned photonic crystal," Optics Express
[12]A. Sakai, H. Sunakawa, and A. Usui, “Defect structure in selectively grown GaN films with low threading dislocation density,” Appl. Phys. Lett., vol. 71, p. 2259,1997.
[13] T. S. Zheleva, O. H. Nam, M. D. Bremser, and R. F. Davis, “Dislocation density reduction via lateral epitaxy in selectively grown GaN structures,”Appl. Phys. Lett., vol. 71, p. 2472, 1997.
[14]C. H. Hou,"output power enhancement of light emitting diodes via two-dimensional hole arrays"generated by a monolayer of micro-spheres,"Appl. Phys. Lett., vol.95,2009.
[15]Y. S. Zhao, D. L. Hibbard, H. P. Lee, K. Ma, W. So, and H. Liu, “Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed Bragg reflector,” Journal of Electronic Materials, vol. 32, No. 12, 2003.