臺灣博碩士論文加值系統

本研究透過簡單的製程，將SiO2與Si3N4的表面鈍化層，鍍覆上電極，做成MIS結構，利用Nicollian與Goetzberger所建立的電導法，來探討介面缺陷濃度以及載子捕捉截面積，藉此研究表面鈍化層的好壞。並比較退火處理前後的差異。
另外，利用高低頻電容-電壓曲線來佐證電導法的正確性，以及用Microwave PCD來討論和有效生命載子週期的關係，並探討著可能產生量測誤差的因素，並給予修正。藉由以上資訊，來估算(1)介面缺陷濃度所造成的表面復合速率，(2)鈍化層固定電荷所造成的場效應影響。

目 錄
摘要 I
致謝 II
Chapter 1 簡介與動機 1
1.1 前言 1
1.2 研究動機 3
Chapter 2 電導法的理論與應用 5
2.1簡介： 5
2.2 基板缺陷之等效電路： 6
2.2.1電子電流密度之等效電路： 9
2.2.2電洞電流密度之等效電路： 12
2.3單一介面缺陷 13
2.4 連續介面缺陷 16
2.5 量測等效電路之換算： 23
2.6 載子捕捉截面積： 24
2.7閘極偏壓與能帶彎曲(band bending)關係 26
Chapter 3 實驗步驟及流程 30
3.1 絕緣層的製備（表面鈍化層） 30
3.1.1 氧化層 30
3.1.2 氮化矽層 31
3.1.3 退火 31
3.2 去除背面絕緣層 31
3.2.1 塗佈光阻 31
3.2.2 背面蝕刻 31
3.3 製作上電極 32
3.4 薄膜厚度量測 32
3.5 電性量測 33
3.5.1 電導量測與高頻電容量測 33
3.5.2 準穩態電容量測 33
3.6 載子生命週期量測 33
Chapter 4 結果與討論 38
4.1串聯電阻的影響 38
4.2 介面缺陷濃度Dit 40
4.2.1 介面缺陷濃度Dit 與閘極偏壓VG的關係 40
4.2.2計算閘極偏壓與表面電位(Surface potential)之關係 41
4.2.3與高低頻C-V量測之比較 43
4.3 退火效果 43
4.3.1 決定介面缺陷位置 43
4.3.2 退火前後比較 44
(a) 表面電位計算Midgap 44
(b) 退火前後介面缺陷濃度Dit比較 45
4.4載子捕捉截面積 45
4.4.1載子捕捉截面積推算生命載子週期 45
4.4.2 MWPCD量測生命載子週期 46
4.5場效應影響 47
4.6 特殊曲線 49
4.6.1 高頻C-V曲線-累積區不一致 49
4.6.2 高頻C-V曲線-反轉區變化 50
Chapter 5 結論 80
Chapter 6 參考文獻 81

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