本實驗以熱蒸鍍法與原子層沉積製程合成出氧化鋁/氧化鋅核殼層奈米線，在退火後成功的得到鋁酸鋅奈米線。實驗結果顯示，不同退火溫度以及退火氣氛會影響奈米線表面形貌粗糙程度；奈米線內具有雙晶晶界，雙晶晶界的存在會影響氧化鋅與氧化鋁之間的擴散，進而造成奈米線球化情形的發生。藉由穿透式電子顯微鏡的分析，確認900 °C退火5小時後奈米線為單晶的尖晶石鋁酸鋅結構。由X光光電子能譜儀分析，發現在氬氣氣氛退火造成奈米線表面的產生大量氧缺陷，而在大氣下退火則能消除氧缺陷的存在。奈米線退火後的陰極發光光譜於330及380 nm的峰值為鋁酸鋅本身的能隙造成的訊號，而在氬氣退火後奈米線於640 nm 的峰值為氧缺陷所造成。在電學性質量測方面，奈米線在氬氣封管退火後電阻率約為105 μΩ-cm，電阻率的下降是因為奈米線氧空缺位置的電子提高了載子濃度。

誌謝 I
摘要 IV
目錄 V
圖目錄 IX
表目錄 XIV
一、 前言 1
二、 文獻回顧 2
2-1奈米科技的發展 2
2-2一維奈米結構之定義與發展 4
2-3奈米線的合成方法 5
2-3-1模板法直接合成一維奈米結構 5
2-3-2水熱化學合成 5
2-3-3氧化物輔助成長 8
2-3-4溶膠凝膠法 9
2-3-5熱蒸鍍法 9
2-4奈米線的成長機制 11
2-4-1氣相固相成長 11
2-4-2氣相-液相-固相成長機制 13
2-5鋁酸鋅奈米結構 17
2-5-1 鋁酸鋅奈米結構的製備 18
2-5-2 柯肯達爾效應 19
2-5-3原子層沉積技術 19
2-5-4鋁酸鋅的性質以及應用 21
2-6 實驗動機與目的 22
三、 實驗方法 23
3-1實驗流程 23
3-1-1鋁矽混合粉末配置 23
3-1-2鋁矽共濺鍍薄膜的製備 24
3-1-3氧化鋁奈米線的合成 26
3-1-4鋁酸鋅奈米線的製程 28
3-2奈米線結構分析、成分分析與性質量測 29
3-2-1場發射掃描式電子顯微鏡 29
3-2-2穿透式電子顯微鏡 29
3-2-3能量散射光譜儀 30
3-2-4聚焦離子束與電子束顯微系統 30
3-2-5 X光光電子能譜儀 31
3-2-6陰極激發光光譜 31
3-2-7半導體參數量測儀 32
四、 結果與討論 33
4-1鋁矽共濺鍍薄膜上合成氧化鋁奈米線 33
4-1-1氧化鋁奈米線形貌 33
4-1-2氧化鋁奈米線的微結構以及成分分析 33
4-2氧化鋁/氧化鋅核殼層奈米線 35
4-3退火溫度的影響 36
4-4退火氣氛的影響 38
4-5氧化鋁/氧化鋅奈米線的微結構以及成分分析 40
4-5-1氧化鋁/氧化鋅核殼層奈米線 40
4-5-2氧化鋁/氧化鋅奈米線在大氣氣氛下900 °C退火5小時 42
4-5-3氧化鋁/氧化鋅奈米線在氬氣氣氛石英封管後900 °C退火5小時 52
4-6 XPS定性分析 59
4-7氧化鋁/氧化鋅奈米線擴散機制的探討 67
4-7-1 退火溫度 67
4-7-2退火氣氛 69
4-8奈米線的CL性質量測 72
4-9奈米線的電性量測 76
五、 結論 81
六、 未來研究方向 83
七、 參考文獻 84

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