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研究生:姜智健
研究生(外文):Chiang, Chih-Chien
論文名稱:TheStudyofResistanceSwitchingPropertiesinOneDimensionalCore-ShellAu-Ga2O3Nanowires
論文名稱(外文):一維金-氧化鎵核殼奈米線的電阻轉換性質研究
指導教授:周立人周立人引用關係
指導教授(外文):Chou, Li-Jen
學位類別:碩士
校院名稱:國立清華大學
系所名稱:材料科學工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2010
畢業學年度:98
語文別:英文
論文頁數:57
中文關鍵詞:奈米線電阻轉換核殼奈米線金-氧化鎵氧化鎵電阻式記憶體
外文關鍵詞:NanowireResistance SwitchingCore ShellAu-Ga2O3gallium oxideRRAM
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首先,我們將反應溫度控制在 800℃ 以及1 × 10 -2 壓力下利用150 nm的金粒子來優化金 -氧化鎵核殼奈米線的生長條件,並用 SEM 、 XRD 以及TEM 來分析奈米線的表面形貌,晶體結構和組成。然後透過搭配三軸調整器的光學顯微鏡以及標準電子束微影技術來製作奈米元件
接著,我們利用Keithley 4200 電流電壓量測儀器來測量氧化鎵奈米線和金-核殼氧化鎵奈米線的電流電壓特性和電阻轉換行為。為了要討論介面和金屬之間的電子傳導路徑,我們比較有無金-核奈米線的電阻轉換特性,也在金-核殼氧化鎵奈米線上設計了不同的電極距離,以及針對金-核殼氧化鎵奈米線直徑的元件進行研究。

At first, we tried to optimize the growth condition of Au-Ga2O3 core-shell nanowires with 150 nm Au particles under the reaction temperature of 800℃ and the pressure of 1×10-2 torr. Afterwards, we used SEM, XRD, TEM to analyze the surface morphology, crystalline structure and the composition of pure Ga2O3 nanowires and Au-Ga2O3 core-shell nanowires.
Besides, we fabricated the nanodevices by the optical microscope equipped with manipulator and a series of standard electron beam lithography (EBL) techniques.
Finally, we measured the I-V characteristics and resistive switching behaviors of the pure and core-shell Ga2O3 nanowires in Keithley 4200. We also designed nanodevices with different electrode distances and diameters to discuss the characteristics.

Content
Content I
The Index of Figures III
Abstract V
摘要 VI
Acknowledgement VII
Chapter 1 Introduction 1
1-1 Nanotechnology 1
1-2 One-Dimensional Nanostructures 2
1-2-1 Synthetical Method and Growth Mechanism of One-Dimensional Nanostructures 3
1-2-2 Vapor-Liquid-Solid (VLS) Method 4
1-3 Background Research 7
1-3-1 Properties of Gallium Oxide (Ga2O3) nanowires 7
1-3-2 Au-Ga2O3 Core-Shell nanowires 9
1-4 Resistive Switching Characteristics 10
1-5 Motivation and Research Directions 12
Chapter 2 Experimental Procedures 13
2-1 Synthesis of One-Dimensional Au-Ga2O3 Core-Shell Nanowires 13
2-2 Property Analysis 15
2-2-1 Surface Morphology Analysis by SEM 15
2-2-2 Crystalline Structure Analysis by X-ray diffraction 15
2-2-3 Structure and Composition Analysis by HRTEM 16
2-3 Nanodevice Fabrication 17
2-3-1 Chip Cleaning 19
2-3-2 Sample Preparation and Pick up nanowires 19
2-3-3 Locate nanowires and Design pattern 21
2-3-4 Photoresist Spin Coating and Soft Baking 21
2-3-5 Electron Beam Lithography 22
2-3-6 Development 22
2-3-7 Thermal Evaporation 23
2-3-8 Lift-Off Process 24
2-3-9 Device Evaluation 24
2-4 I-V Measurements 26
Chapter 3 Results and Discussion 28
3-1 Optimization the Growth of Au-Ga2O3 Core-Shell Nanowires 28
3-2 Properties Analysis 30
3-2-1 Surface morphology analysis 30
3-2-2 Crystalline structure analysis 30
3-2-3 Structure and Composition Analysis 32
3-2-4 Electricity Analysis 35
3-3 The Resistive Switching Characteristics of Au-Ga2O3 Core-Shell Nanowires 38
3-3-1 The Conducting Path in Core-Shell Nanowires 41
3-3-2 The Electrode Distance in the Forming Process 43
3-3-3 The Behaviors of Resistive Switching 46
3-3-4 The Resistive Switching Behavior of Different Diameters 48
Chapter 4 Summary and Conclusions 51
References 52

References
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