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研究生:陳耀祥
研究生(外文):Chen, Yao-Hsiang
論文名稱:HfO2/La2O3/HfO2疊層中不同La2O3位置對電性與材料性質的影響
論文名稱(外文):Effects of Different Locations of La2O3 in HfO2/La2O3/HfO2 Stacks on Electrical and Material Properties
指導教授:吳泰伯
指導教授(外文):Wu, Tai-Bor
學位類別:碩士
校院名稱:國立清華大學
系所名稱:材料科學工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2010
畢業學年度:98
語文別:中文
論文頁數:62
中文關鍵詞:氧化鉿氧化鑭high-k原子層化學氣相沉積法
外文關鍵詞:HfO2La2O3high-kALCVD
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由於原子層化學氣相沉積法(Atomic Layer Chemical Vapor Deposition,ALCVD)具有極佳的厚度控制能力、均勻覆蓋能力以及低溫製程等優點,所以為沉積薄膜的方法中極佳的選擇。
本實驗將採用ALCVD以TEMAH做為Hf的金屬前驅物,D2O做為氧化劑,沉積HfO2,以La(iPr2-FMD)3做為La的金屬前驅物,O2電漿做為氧化劑,沉積La2O3,製備HfO2/La2O3/HfO2 high-k疊層。
實驗設計將製備三種具不同La2O3位置的HfO2/La2O3/HfO2 high-k疊層,並分別處以PDA700℃及PDA900℃熱處理,熱處理後使用E-gun沉積Ti上電極,RF sputter沉積Pt下電極,製備成MOS電容進行電性量測。
實驗討論部分將藉由材料分析SIMS、IPXRD及XPS探討相同熱處理溫度PDA700℃下,三種具不同La2O3位置的high-k疊層電性上表現不同的原因。在探討完PDA700℃的情況後,再將PDA900℃所得結果與PDA700℃結果做比較,討論在同一結構下,造成兩種不同熱處理溫度具不同電性表現的原因。
第一章 引言 1
1.1研究背景 1
1.2研究動機 2
1.3研究目標 2
第二章 文獻回顧 3
2.1high-k材料 3
2.2high-k薄膜製備方法 7
2.2.1物理氣相沉積法 7
2.2.2化學氣相沉積法 8
2.2.3液相化學沉積法 11
2.3原子層化學氣相沉積法(ALCVD) 12
2.4ALCVD技術優缺點 16
2.5ALCVD前驅物選擇 18
2.6電漿系統 20
2.6.1電漿原理 20
2.6.2ALCVD中的電漿系統 20
2.7介電分析 22
第三章 實驗製程 25
3.1基板準備 25
3.2表面D2O電漿處理 25
3.3沉積high-k薄膜 26
3.4薄膜熱處理Post Deposition Anneal(PDA) 29
3.5製作上、下電極 29
3.6電性量測與材料分析 31
3.6.1電性量測 31
3.6.2材料分析 31
3.6.2.1Secondary Ion Mass Spectrometer(SIMS) 31
3.6.2.2In-Plane X-ray Diffraction(IPXRD) 31
3.6.2.3X-ray photoelectron spectroscopy(XPS) 32
第四章 結果與討論 33
4.1PDA700℃HfO2/La2O3/HfO2疊層 33
4.1.1SIMS分析 33
4.1.2C-V、I-V特性曲線分析 36
4.1.2.1PDA700℃不同La2O3位置對Vfb的影響 38
4.1.2.2PDA700℃不同La2O3位置對EOT的影響 41
4.1.2.3PDA700℃不同La2O3位置對Jg@Vfb-1V的影響 46
4.2PDA900℃HfO2/La2O3/HfO2疊層 48
4.2.1PDA700℃與PDA900℃之Vfb比較 49
4.2.2PDA700℃與PDA900℃之EOT比較 54
4.2.3PDA700℃與PDA900℃之Jg@Vfb-1V比較 57
第五章 結論 59
參考文獻 60
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