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研究生:林振湋
論文名稱:巨磁阻感測元件的製作與量測
論文名稱(外文):Fabrication and testing of giant magnetoresistance sensing elements
指導教授:衛榮漢
學位類別:碩士
校院名稱:國立清華大學
系所名稱:動力機械工程學系
學門:工程學門
學類:機械工程學類
論文種類:學術論文
畢業學年度:98
語文別:中文
論文頁數:87
中文關鍵詞:邊緣效應多層堆疊巨磁阻
外文關鍵詞:Edge EffectMultilayerGMR
相關次數:
  • 被引用被引用:4
  • 點閱點閱:224
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  • 下載下載:0
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摘要............................................................................................................. i
英文摘要.................................................................................................... ii
致謝........................................................................................................... iii
目錄........................................................................................................... iv
圖 目 錄.................................................................................................. vii
第一章 緒論...............................................................................................1
1-1 前言.............................................................................................1
1-2 研究動機與目的.........................................................................2
1-3 磁電阻元件的應用.....................................................................3
第二章 理論基礎與文獻回顧...........................................................5
2-1 理論基礎介紹..............................................................................5
2-1-1 磁電阻原理.......................................................................5
2-1-2 磁電阻的分類...................................................................6
2-1-3 差異性自旋散射...............................................................7
2-1-4 巨磁阻的膜層結構...........................................................8
2-1-5 影響巨磁阻的重要因素.................................................15
2-2 線性編碼器................................................................................19
2-3 磁性感測元件電路設計原理....................................................20
第三章 磁性感測元件之製作與量測....................................................22
3-1 元件基本規格設計..................................................................22
3-2 晶片製程設計..........................................................................24
3-2-1 光罩製作.........................................................................25
3-2-2 晶片清洗.........................................................................25
3-2-3 樣品製作.........................................................................27
3-3 實驗設備與實驗架構..............................................................28
3-3-1 製程設備.........................................................................28
3-3-2 量測設備與實驗架構.....................................................30
第四章 實驗結果與討論........................................................................32
4-1 巨磁阻感測元件膜層厚度選擇..............................................32
4-2 巨磁阻感測元件參數研究......................................................32
4-2-1 不同長寬比對於感測元件的影響.................................33
4-2-2 磁難軸向加場與磁易軸向加場之比較........................38
4-2-3 自由層厚度改變對於巨磁阻感測元件的影響............42
4-2-4 邊緣效應對於輸出曲線的改變.....................................47
4-2-5 多層堆疊對於巨磁阻感測元件的影響........................61
4-2-5 溫度對於巨磁阻感測元件的影響.................................68
4-3 以不同材料製作巨磁阻元件..................................................74
第五章 結論.............................................................................................82
5-1 結論............................................................................................82
參考文獻...................................................................................................84
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