跳到主要內容

臺灣博碩士論文加值系統

(44.220.184.63) 您好!臺灣時間:2024/10/08 06:48
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

我願授權國圖
: 
twitterline
研究生:鄭惟仁
研究生(外文):Cheng, Wei-Ren
論文名稱:壓阻式低壓壓力感測器之設計與製造
論文名稱(外文):Design and Fabrication on the Piezoresistive Low Pressure Sensor
指導教授:方維倫
指導教授(外文):Fang, Weileun
學位類別:碩士
校院名稱:國立清華大學
系所名稱:動力機械工程學系
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2010
畢業學年度:98
語文別:中文
論文頁數:72
中文關鍵詞:低壓壓力感測器壓阻式
外文關鍵詞:Low pressure sensorPiezoresistive
相關次數:
  • 被引用被引用:3
  • 點閱點閱:618
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
本研究開發一壓阻式低壓感測器(Low Pressure Sensor, 簡稱LPS) ,並設定其低壓感測範圍在1psi以下,此物理量大約在一般常人呼吸壓力之範圍,其應用在於高附加價值之醫療感測與監視儀器用途,用以監控患者或是老年人之呼吸狀況以作為病情分析與急難救助之需求。本研究經由建立完整元件之設計、製程與測試方法,探討影響元件特性以及製程良率之顯著結構因子,以提升低壓感測器的靈敏度、線性度以及生產良率,將元件性能進一步提升至高規格產品。


This study develops a piezoresistive low pressure sensor which sensing range is defined below to 1psi. The sensing range of this target is in the range of human breath. Thus, the application lies in the medical instrument and monitoring systems. The low pressure sensor can detect the amplitude and frequency of the breath to monitor and record the breathing conditions of patients or elders for analyzing or emergency requests. In order to find out the significant structure factors for device performance and fabrication yield, this study builds complete platform from design, fabrication to testing. In summary, this study tries to promote the device performance, such as sensitivity and linearity, to a high specification of product.
目錄
中文摘要 i
Abstract ii
致謝 iii
目錄 v
圖目錄 vii
表目錄 x
第一章 緒論 1
1-1 前言 1
1-2 研究動機 2
1-3 文獻回顧 2
1-3.1 壓力感測器感測型式 3
1-3.2 影響感測器性能之因素 7
1-4 研究目標 8
第二章 設計與模擬分析 20
2-1 壓阻效應 20
2-2 惠斯同電橋 22
2-3 元件設計與模擬 23
第三章 製程與實驗 40
3-1 製程步驟 40
3-2 製程結果與問題改善 43
3-2.1 壓力感測器 43
3-2.2 背向濕蝕刻凸塊 44
第四章 量測結果與討論 51
4-1 壓力感測器性能量測 51
4-2 量測結果討論 56
第五章 結論與未來工作 65
5-1 結論 65
5-2 未來工作 66
參考文獻 68


參考文獻
[1] D.A. Gee, K.E Peterson, and G.T.A. Lovacs, “MEMS in the Medical Industry,” Sensor Expo Proceeding, Spring, Anaheim, California, USA, April, 1996, pp. 161-163.
[2] Global Information, Inc. “Microelectromechanical Systems (MEMS) Technology: Current and Future Markets,” 2006.
[3] K.E. Petersen, “Silicon as a mechanical material,” Electron Devices, IEEE Transactions, 70, pp. 420-457, 1982.
[4] R.T. Howe, R.S. Muller, K.J. Gabriel, and W.S.N. Trimmer, IEEE spectrum, 27, pp. 29-35, 1990.
[5] 丁志明等, “微機電系統技術與應用,” 國科會精密儀器發展中心, 2003.
[6] http://nks.myweb.hinet.net/prega.htm
[7] S.K. Clark and K.D. Wise, “Pressure sensitivity in anisotropically etched thin-diaphragm pressure sensors,” IEEE Transactions on Electron Devices, 26, pp. 1887-1896, 1979.
[8] W.P. Eaton and J.H. Smith, “Micromachined pressure sensors: review and recent developments,” Smart Master., Struct. 6, pp. 530-539, 1997.
[9] C. L. Dai, and M. C. Liu,” Complementary Metal–Oxide–Semiconductor Microelectromechanical Pressure Sensor Integrated with Circuits on Chip,” Jpn. J. Appl. Phys., 46, pp. 843-848, 2007.
[10] C. Ravariu, F. Ravariu, D. Dobrescu, L. Dobrescu, C. Codreanu, and M. Avram, “A designing roule for a pressure sensor with PZT layer,” Semiconductor Conference, Sinaia, Romania, Oct, 2001, pp. 379-382.
[11] C. S. Smith, “Piezoresistance effect in germanium and silicon,” Phys. Rev, 94, pp. 42-49, 1954.
[12] A. Gieles, “Submmiature silicon pressure transducers,” Solid-State Circuits Conference, Philadelphia, PA , USA, Feb, 1969 , pp. 108-109.
[13] T. N. Jackson, M.A. Tischler, and K.D. Wise, “An electrochemical P-N junction etch-stop for the formation of silicon microstructures,” Electron Device Letters, 2, pp. 44-45, 1981.
[14] S. Sugiyama, K. Shimaoka, and O. Tabata, “Surface micromachined micro-diaphragm pressure sensors,” Transducers’ 91, San Francisco, CA, USA, Jun, 1991, pp. 188-191.
[15] B. Folkmer,; P. Steiner, and W. Lang, “A pressure sensor based on a nitride membrane using single crystalline piezoresistors,” Sensors and Actuators A: Physical, 54, pp. 488-492, 1996.
[16] www.sensorsmag.com/articles/0700/62/main.shtml
[17] M. Eickhoff, "A high temperature pressure sensor prepared by selective deposition of cubic silicon carbide on SOI substrates," Sensors and Actuators A: Physical, 74, pp. 56-59, 1999.
[18] J. Chiou, "Simulations for thermal warpage and pressure nonlinearity of monolithic cmos pressure sensors," IEEE Transactions on Advanced Packaging, 26, pp. 327-333, 2003.
[19] J. Albert Chiou and S. Chen, "Pressure nonlinearity of micromachined piezoresistive pressure sensors with thin diaphragms under high residual stresses," Sensors and Actuators A: Physical, 147, pp. 332-339, 2008.
[20] 劉育智, “標準CMOS製程之薄膜殘餘應力萃取,” 清華大學動力機械 工程學系碩士論文, 2009.
[21] P. Universtiy, "Residual stress induced deformation of bilayer plate with patterned additional layer," 2004 International Conference on Intelligent Mechatronics and Automation, 2004. Proceedings., China, Aug, 2004, pp. 288-292.
[22] 壓阻式壓力感測器-類比式校正電路指南 http://www.metrodyne.com.tw/download.phtml-Part=StrainGage&Nbr=271&Category=109633
[23] J.A. Chiou and S. Chen, "Thermal hysteresis and voltage shift analysis for differential pressure sensors," Sensors and Actuators A: Physical, 135, pp. 107-112, 2007.
[24] T. Chou, C. Chu, C. Lin, and K. Chiang, "Sensitivity analysis of packaging effect of silicon-based piezoresistive pressure sensor," Sensors and Actuators A: Physical, 152, pp. 29-38, 2009.
[25] A. Tibrewala, A. Phataralaoha, and S. Büttgenbach, "Simulation, fabrication and characterization of a 3D piezoresistive force sensor," Sensors and Actuators A: Physical, 147, pp. 430-435, 2008.
[26] A. Tibrewala, A. Phataralaoha, and S. Büttgenbach, "Analysis of full and cross-shaped boss membranes with piezoresistors in transversal strain configuration," J. Micromech. Microeng , 18, pp. 1-6, 2008.
[27] C. Shuang, et al.. "Design and optimization of a micro piezoresistive pressure sensor," in Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on, Sanya, Jan, 2008, pp. 351-356.
[28] L. Lin, W. Yun, H. Chu, and M. Chiao, "Surface micromachined diaphragm pressure sensors with optimized piezoresistive sensing resistors," 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI., Australian, Nov, 1995, pp. 24-27.
[29] V. Nesterov and U. Brand, "Modelling and investigation of the mechanical and electrical characteristics of the silicon 3D-boss microprobe for force and deflection measurements," J. Micromech. Microeng, 16, pp. 1116-1127, 2006.
[30] R. Singh, Low Lee Ngo, Ho Soon Seng, and F.N.C. Mok, “A silicon piezoresistive pressure sensor,” Electronic Design, Test and Applications., Christchurch , New Zealand , Aug, 2002, pp. 181-184.
[31] 黃德昌, “以乾濕複合蝕刻法進行微壓力感測器微小化之研究,” 交通大學工學院精密與自動化工程學程碩士論文, 2005.
[32] A. C. Ugural, “Stress in plates and shells,” 2nd ed., 1981.
[33] G. Zhang, H. Xie, L. E. de Rosset and G. K. Fedder, “A lateralcapacitive COMS accelerometer with structural curlcompensation,” MEMS ’99, Orlando , FL , USA, Jan, 1998, pp. 606-611.
[34] Hasnain Lakdawala and G.K. Fedder, “Temperature stabilizationof CMOS capacitive accelerometer”, J. Micromeh. Microeng., 14, pp. 559-566, 2004.
[35] 蔡明翰,“新型CMOS MEMS 全差動Z 軸加速度計,” 清華大學微機電系統工程研究所碩士論文, 2007.
[36] A. Partridge, J. K. Reynolds, B. W. Chui, E. M. Chow, A. M.Fitzgerald, L. Zhang, N. I. and T. W. Kenny, “A high-performance planar piezoresistive accelerometer,” J. Microelectromechanical Systems, 9, pp. 58-66, 2000.
[37] R. Amarasinghe, D. V. Dao, T. Toriyama and S. Sugiyama,“Design and fabrication of a miniaturized six-degree-of-freedom piezoresistive accelerometer,” J. Micromech. Microeng., 15, pp.1745-1753, 2005.
[38] R. Amarasinghe, D. V. Dao, T. Toriyama and S. Sugiyama,“Simulation, fabrication and characterization of a three-axis piezoresistive accelerometer,” Smart Materials and Structures, 15, pp. 1691-1699, 2006.
[39] B. Folkmer,; P. Steiner, and W. Lang, “A pressure sensor based on a nitride membrane using single crystalline piezoresistors,” Sensors and Actuators A: Physical, 54, pp. 488-492, 1996.
[40] J.-S. Park and Y. B. Gianchandani, “A low cost batch-sealed capacitive pressure sensor,” MEMS ’99, Orlando, FL, USA, Jan, 1999, pp.82-87.
[41] S. Sugiyama, K. Shimoka and O. Tabata, “Surface micromachined micro-diaphragm pressure sensors,” Transducers '91, San Francisco, CA, USA, Jun, 1991, pp. 188-191.
[42] C. Ravariu, F. Ravariu, D. Dobrescu, L. Dobrescu, C. Codreanu, and M. Avram, “A designing roule for a pressure sensor with PZT layer,” Semiconductor Conference, Sinaia, Romania, Oct, 2001, pp. 379-382.
[43] C. Pramanik, H. Saha and U. Gangopadhyay, “ Design optimization of a high performance silicon MEMS piezoresistive pressure sensor for biomedical applications,” J. Micromech. Microeng., 16, pp. 2060-2066, 2006.
[44] A. Yasukawa , M. Shimazoe , Y. Matasuoka , “Simulation of Circular Silicon Pressure Sensors with a Center Boss for Very Low Pressure Measurement” , IEEE transactions on electron devices, 36, pp. 1295-1302, 1989

連結至畢業學校之論文網頁點我開啟連結
註: 此連結為研究生畢業學校所提供,不一定有電子全文可供下載,若連結有誤,請點選上方之〝勘誤回報〞功能,我們會盡快修正,謝謝!
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top