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研究生:黃永松
研究生(外文):Huang, Yung-Sung
論文名稱:高壓元件800伏特橫向金氧半場效電晶體之設計
論文名稱(外文):The Design of 800V LDMOSFET in High Voltage Device
指導教授:黃智方龔正龔正引用關係
指導教授(外文):Huang, Chih-FangGong, J.
學位類別:碩士
校院名稱:國立清華大學
系所名稱:電子工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2009
畢業學年度:98
語文別:中文
論文頁數:62
中文關鍵詞:800伏特橫向電晶體
外文關鍵詞:800V LDMOS
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Due to the rise、development and wide application of power devices, LDMOS with planar structure in one of them can integrate high voltage device and low voltage device into the same chip efficiently. Hence, it becomes the major driver IC because of this reason. One of the characteristic of LDMOS is its low dopant region that can supply large resistance, is the key point of high breakdown voltage. And to have the low on-resistance and high breakdown voltage at the same time becomes the desired request of LDMOS design.
The traditional HV device used the principle of Reduced Surface Field (RESURF) can make the integration of circuit to be realized on a thin epitaxial layer. But the electrical characteristic of device is very sensitive to the changing of process parameters so that it is harder to design. For example, the increase of breakdown will produce high on-resistance. Hence, the rated current is limited relatively.
In this thesis, the increase of breakdown and low on-resistance are performed by introducing internal field ring、P buried layer and double metal layers into LDMOSFET structure. Finally, we use computer simulation to obtain the optimum fine tune parameters of process.

摘要....................................................I
致謝...................................................III
目錄....................................................IV
第一章 前言............................................1
第二章 功率元件的發展與回顧............................4
2.1 LDMOSFET基本結構與工作原理..................4
2.2功率元件的崩潰機制...........................5
2.3 RESURF(降低表面電場)原理....................6
  2.4 LDMOSFET的導通電阻..........................7
第三章 Internal field ring、P-buried layer與double metal layers應用於LDMOSFET的優點.............................14
3.1 RESURF LDMOSFET的缺點......................14
3.2 Internal field ring對LDMOSFET的改善........16
3.3 P-buried layer對LDMOSFET的改善.............16
3.4 Double metal layers對LDMOSFET的改善........17
3.5 Internal field ring、P-buried layer與double
metal layers應用於LDMOSFET的優勢...........18
第四章 800V LDMOSFET最佳化設計........................27
4.1參數定義....................................27
4.1.1 崩潰電壓..............................27
4.1.2 導通電阻..............................28
4.1.3 臨界電壓..............................28
4.1.4 效能指標..............................29
4.2 800V LDMOSFET的製程步驟....................29
4.3 800V LDMOSFET的參數分析....................30
(1)N-drift region相關參數對崩潰電壓的影響...31
(2)P-buried layer相關參數對崩潰電壓的影響...34
(3)P-ring相關參數對崩潰電壓的影響...........38
(4)多晶矽閘極長度對崩潰電壓的影響..............43
(5)Double metal layers延伸長度對崩潰電壓的影響.44
4.4 800V LDMOSFET的設計........................50
第五章 結論...........................................59
參考文獻...............................................60

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