臺灣博碩士論文加值系統

此篇論文研究使用矽離子當作汲、源極摻雜的氮化鎵金氧半電晶體。為了保持在離子佈植時的活化率同時避免表面氮的跑掉，我們發現最佳的活化製程為在氮氣中使用快速熱退火於1200度5分鐘。此時所量測出最低的片電阻為62Ω/ohm。另一項研究為使用原子氣相沉積，沉積氧化鋁當作閘極介電層，為避免氧化鋁在高溫燒結時會有裂解，必須先做燒結後才能沉積閘極介電層。最後，當完成的元件經過混合氣體的燒結後可以有效改善氧化層-氮化鎵的界面，其最佳的導通電阻為24 Ω*cm以及電流密度大於10 mA/mm。
我們另外的研究為氮化銦鎵/氮化鎵材料，在研究中發現，即使活化溫度達到1100度，由於汲、源極仍然未完全活化，使得最大導通電流密度大約1mA/mm，這些元件存在著很大的汲極漏電流，乃為由基板漏電流造成。

This thesis investigates the fabrication of GaN MOSFETs utilizing Si as the implant species for the source and drain regions. In order to prevent nitrogen loss from the surface while keep ion implantation activation efficiency, we find the best annealing process is to perform RTA at 1200 ℃ for 5 minutes in N2 ambient. The measured sheet resistance is as low as 62Ω/ohm. We investigated the performance of ALD deposited Al2O3 as the gate dielectric. To prevent Al2O3 being recrystallized during high temperature annealing, the ohmic contacts are formed before gate oxide deposition. The devices are forming gas annealed to further improve the oxide-GaN interface. The best measured RON is 24 Ω*cm and the current density above 10 mA/mm.
We also studied MOSFETs using InGaN/GaN material system. It is found that even the activation temperature is as high as 1100 ℃, the ION(max) is only about 1mA/mm due to poor activation in the source and drain. These devices exhibit significant drain leakage current which is attributed to substrate leakage current.

目錄
摘要 I
中文摘要 I
英文摘要 II
致謝 III
目錄 IX
圖目錄 XIII
表目錄 XX
第一章 序論 1
1-1前言 1
1-2氮化鎵的材料特性 1
1-3研究動機與文獻回顧 2
1-4論文大綱 6
第二章 基本理論 11
2-1 MOS結構 11
2-1-1氧化層電荷分布 11
2-2 MOSFET特性 13
2-2-1臨界電壓(Threshold Voltage, VTH) 14
2-2-2轉導增益(Transconductance, gm)與場效遷移率 15
2-2-3次臨界擺幅(Subthreshold Swing, St) 16
2-2-4崩潰電壓(Breakdown Voltage ,BV) 16
2-2-5基板效應(Body-effect) 17
2-2-6通道調變效應(Channel Length Modulation) 17
2-2-7接觸電阻(Contact Resistance) 18
第三章 元件製程 21
3-1 MOSFET光罩設計 21
3-2元件製作 23
3-2-1 N型基板低溫離子佈植Al2O3為介電層無金屬燒結MOSFET 29
3-2-2 N型基板低溫離子佈植Al2O3為介電層有金屬燒結MOSFET 31
3-2-3 N型基板高溫離子佈植SiO2為介電層有金屬燒結MOSFET 35
3-2-4 N型基板高溫離子佈植Al2O3為介電層有金屬燒結MOSFET 41
3-2-5 InGaN ALD-Al2O3 MOSFET 46
第四章 元件量測分析與結果探討 51
4-1 ALD-Al2O3閘極氧化層低溫離子佈植無金屬燒結活化溫度1200 ℃基本電性分析 52
4-1-1 MOSFET ID-VDS電性分析 52
4-1-2 MOSFET ID-VGS電性分析 53
4-1-3導通電阻和接觸電阻分析 54
4-2 ALD-Al2O3為閘極氧化層低溫離子佈植金屬燒結並活化於1200 ℃基本電性分析 55
4-2-1 MOSFET ID-VDS電性分析 55
4-2-2 MOSFET ID-VGS電性分析 58
4-2-3導通電阻和接觸電阻分析 59
4-3 PECVD-SiO2為閘極氧化層高溫離子佈植金屬燒結並活化於1100 ℃基本電性分析 62
4-3-1 MOSFET ID-VDS電性分析 62
4-3-2 MOSFET ID-VGS電性分析 65
4-3-3導通電阻和接觸電阻分析 66
4-4 ALD-Al2O3為閘極氧化層高溫離子佈植金屬燒結並活化於1150 ℃基本電性分析 69
4-4-1 MOSFET ID-VDS電性分69
4-4-2 MOSFET ID-VGS電性分析 71
4-4-3導通電阻和接觸電阻分析 72
4-5綜合比較分析 74
4-5-1 PECVD-SiO2為閘極氧化層且活化於1100 ℃電晶體 77
4-5-2 ALD-Al2O3為閘極介電層且活化於1150 ℃電晶體 78
4-5-3 ALD-Al2O3為閘極介電層且活化於1200 ℃電晶體 80
4-6 InGaN MOSFET 82
第五章 總結論文，對未來之建議與改進方向 85
參考文獻 86

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