臺灣博碩士論文加值系統

超薄膜氮化銦(~10奈米)離子感測場效電晶體(ISFET)在閘極表面利用分子氣相沉積儀(MVD)修飾上3-aminopropyltrimethoxysilane (APTMS)，來實行對鈣離子的選擇性偵測。超薄膜氮化銦離子感測場效電晶體，本身對陰離子有很高的靈敏度和很短的反應時間，在化學或生物分子偵測應用上面有極大的潛力。氮化銦表面經由氧電漿(O2 plasma)清洗，再經過一小時APTMS的沉積後，水接觸角由74o變化到61o。APTMS尾端官能基為–NH2基，繼續與交聯劑(Cross-linker)戊二醛反應，與鈣離子選擇物磷化酪氨酸(p-Tyr)鍵結，尾端帶磷酸根。將氮化銦離子感測場效電晶體浸入1 mM p-Tyr 溶液12 小時之後，修飾完成的氮化銦離子感測場效電晶體利用錯合反應來對鈣離子作偵測。此時可觀察到當鈣離子加入時，源極-汲極的電流會有上升的現象，電流會上升是因為磷化酪氨酸的磷酸根與帶正電的鈣離子產生錯合反應，在通道表面提高了電子濃度。靈敏度大約1.11 %/decade，偵測極限為10-6 M。當我們做離子選擇性測試時，將元件分別浸入氯化鈉、氯化鉀、氯化鎂溶液中，可以算出鈣離子的電流變化大約分別為鈉、鉀、鎂三種離子的6.53倍、3.2倍與27.9倍。

Ultrathin (~10 nm) InN ion sensitive field effect transistors (ISFETs) modified with 3-aminopropyltrimethoxysilane (APTMS) by molecular vapor deposition (MVD). It is used to selectively detect calcium ions. The ultrathin InN ISFETs have high sensitivity and short response time for anion detection, showing a great potential for chemical and biological sensing applications. The change of water contact angle on InN surface was observed from 74o, indicating the O2 plasma cleaning, to 61o after 1 hour vapor deposition. APTMS with –NH2 terminal functional groups react to the cross-linker, glutaraldehyde, is used to immobilize O-phospho-l-tyrosine (p-Tyr) with phosphate end. After immersed in 1 mM p-Tyr solution for 12 hours, the functionalized InN ISFET is used to complex with calcium ion. A source-drain current increase is observed when calcium ion introduced to the gate region of ISFETs. The current increase is attributed to the binding of positively charged calcium ion. The sensitivity is about 1.11 %/decade, and detection limit is 10-6 M. When InN ISFET is immersed to sodium chloride, potassium chloride, magnesium chloride solution individually, we can calculate that the sensitivity on calcium ion is 6.53, 3.2, 27.9 times than sodium, potassium, and magnesium ions.

摘要 I
ABSTRACT II
目錄 III
圖目錄 IV
表目錄 VII
符號表 VIII
第一章 前言 1
1.1 研究背景 1
1.2 鈣的調節 2
1.3 血鈣疾病 4
1.4 研究動機與目標 6
1.5 全文架構 7
第二章 文獻回顧 8
2.1 氮化銦離子感測場效電晶體 8
2.1.1氮化銦表面電子累積性質 8
2.1.2氮化銦表面陰離子吸附特性 11
2.1.3離子選擇場效電晶體效能參數 13
2.2 表面化學修飾 14
2.3 鈣離子選擇性感測 16
2.3.1 光學感測法 17
2.3.2 電學感測法 18
2.4 離子水溶液PH值理論計算 25
第三章 元件製造與研究方法 31
3.1 元件製造 31
3.1.1氮化銦離子感測場效電晶體設計 31
3.1.2製程步驟 33
3.1.3元件封裝 35
3.2 研究方法 36
3.2.1 實驗藥品 36
3.2.2 實驗流程 38
3.2.3 利用分子氣相沉積儀做表面修飾 40
3.2.4 鈣離子選擇物固化 42
3.2.5 離子水溶液準備 42
第四章 量測方法 43
4.1 表面化學修飾量測 43
4.1.1 接觸角量測 43
4.1.2光學顯微鏡 46
4.1.3電阻 48
4.2 元件電壓量測 49
4.2.1儀器設置 49
4.2.2電壓調變測試 51
4.3 元件電流量測 52
4.3.1儀器設置 52
4.3.2pH電流反應 54
4.3.3電壓電流轉換公式 56
第五章 量測結果與討論 57
5.1 元件動態電流量測 57
5.1.1修飾前氯化鈣動態電流量測 58
5.1.2修飾後氯化鈣動態電流量測 60
5.1.3修飾前後pH電流反應 64
5.1.4穩定性 65
5.2 選擇性 67
5.2.1修飾前後氯化鈉動態電流量測 67
5.2.2修飾前後氯化鉀動態電流量測 69
5.2.3修飾前後氯化鎂動態電流量測 71
5.2.4比較 73
5.3 閘極漏電流量測 75
5.3.1儀器設置 75
5.3.2氯化鈣水溶液量測 76
第六章 結論 78
第七章 未來工作 80
參考文獻 82

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