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研究生:陳彥瑋
研究生(外文):IAN-WEI CHEN
論文名稱:以射頻電漿輔助化學氣相沉積法製備矽晶異質接合相關膜層之研究
論文名稱(外文):Investigation on Silicon Heterojunction Layers Prepared by RF-PECVD
指導教授:洪儒生洪儒生引用關係
指導教授(外文):Lu-Sheng Hong
學位類別:碩士
校院名稱:國立臺灣科技大學
系所名稱:化學工程系
學門:工程學門
學類:化學工程學類
論文種類:學術論文
論文出版年:2010
畢業學年度:98
語文別:中文
論文頁數:76
中文關鍵詞:有效載子生命周期單晶矽異質接合射頻電漿輔助化學氣相沉積n 型單晶矽鈍化暗示開路電壓
外文關鍵詞:effective lifetimeimplied open circuit voltagen type monocrystalline siliconpassivationRF-PECVDsilicon heterojunction
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本論文係以射頻電漿輔助化學氣相沉積法,來探討單晶矽異質接合的最佳化程序,包含將本質層非晶矽沉積於n型單晶矽基材,以及沉積p型與n型非晶矽摻雜層。所使用的摻雜源為毒性稀釋之三甲基硼及三丁基磷。
本實驗呈現矽晶片於異質接合後的暗示開路電壓(implied Voc)與有效載子生命周期(effective lifetime),作為矽晶異質接合良好與否的指標。以矽甲烷並添加氫氣來製備本質非晶矽,作為鈍化之用。
首先改變本質非晶矽的氫氣稀釋比([H2]/[SiH4]);成長膜層厚度為15奈米時,沉積的本質非晶矽層具有較佳的矽晶界面鈍化效果。本實驗製作的矽晶異質接合可得到晶片有效載子生命周期到達350 μs,暗示開路電壓為655 mV。
In this thies, the intrinsic amorphous silicon (a-Si:H) were deposited on n-type monocrystalline silicon by RF PECVD, including p type amorphous silicon and n type amorphous silicon, we discuss optimization procedure of silicon heterojunction(SHJ). The TMB and TBP were used as the doping gases.
We present implied open circuit voltage and effective lifetime in silicon heterojunction as the indicators. The thin intrinsic a-Si:H were prepared by SiH4 and H2 under different dilution ratio. It is found that a better interface passivation of SHJ was obtained by 15 nm thickness intrinsic a-Si:H. In this experiment, the implied open circuit voltage of Silicon heterojunction is 655 mV, effective lifetime is 350 μs.
摘要 I
Abstract II
誌謝 III
目錄 IV
圖索引 VI
表索引 IX
第一章 緒論 1
1.1前言 1
1.2單晶矽的性質 3
1.3非晶矽薄膜的性質 4
1.3.1本質非晶矽 4
1.3.2非晶矽/結晶矽異質接合的性質 6
1.3.3摻雜的非晶矽 9
1.4異質接面單晶矽太陽能電池的光電轉換原理 11
1.5載子生命週期 13
1.5.1產生與復合 13
1.5.2塊材復合 16
1.5.3表面復合 19
1.5.4背表面電場(back surface field)之效應 27
1.6研究目的與方向 29
第二章 實驗相關部分 30
2.1 實驗藥品與相關氣體 30
2.2實驗裝置及步驟 33
2.3分析儀器 38
2.3.1紫外光/可見光光譜儀 38
2.3.2 表面輪廓儀(Surface Profiler) 41
2.3.3拉曼光譜儀(Raman) 42
2.3.4 IV量測系統(IV) 44
2.3.5 傅立葉紅外線光譜儀(FT-IR) 45
2.3.6準穩態光導電儀(Quasi-steady state Photoconductivity) 48
2.3.7反射式高能電子繞射 (reflection high energy electron diffraction, RHEED) 50
第三章 結果與討論 51
3.1 本質氫化非晶矽鈍化層的成長 51
3.1.1本質氫化非晶矽膜層的氫氣稀釋比([H2]/[SiH4])對矽晶異質接合的影響 51
3.1.2本質氫化非晶矽膜層的基材溫度對矽晶異質接合的影響 60
3.1.3本質氫化非晶矽膜層的厚度對矽晶異質接合的影響 66
第四章結論 71
參考文獻 72
作者簡介 76
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