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研究生:譚嘉偉
研究生(外文):Jia-Wei Tan
論文名稱:微型干涉儀光積體元件之光輸出特性數值模擬分析研究
論文名稱(外文):The Study of Numerical Simulations of the Integrated Micro-Interferometer Device and its Output Characterizations
指導教授:施明昌施明昌引用關係
指導教授(外文):Ming-Chang Shih
學位類別:碩士
校院名稱:國立高雄大學
系所名稱:電機工程學系--先進電子構裝技術產業研發碩士專班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2010
畢業學年度:98
語文別:中文
論文頁數:69
中文關鍵詞:脊狀波導結構光電開關光積體元件Mach-Zehnder微型干涉儀
外文關鍵詞:Ridge-waveguide structureOptical-electro switch deviceOptical integrated deviceMach-Zehnder micro interferometer
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本論文主要探討微型干涉儀光積體元件之光輸出特性,運用金屬氧化半導體(Metal-Insulator-Semiconductor)元件的理論,設計脊狀波導結構Mach Zehnder微型干涉儀的元件,利用具有高折射率的矽材料,藉由MIS結構的矽半導體材料自由載子的產生來調變其折射率的變化,控制光信號的On及Off的特性,形成良好的光電調制開關,利用氮化鋁(Aln)做為絶緣層(insulating layer)的材料,以矽材料做為導光層(waveguide layer),再以空氣(Air)做為基板層(background layer),使用波導基本理論(模態傳播法)、金屬氧化半導體(Metal-Insulator-Semiconductor)元件的理論與模擬軟體(BeamProp Software)來設計光波導元件,模擬Mach Zehnder微型干涉儀光積體元件光的輸出特性。
In this thesis, we demonstrate an optical micro interferometer and its optical output characterizations. using numerical approach of a beam propagation along a silicon base waveguide , and the control of the surface potential in a metal-insulator-semiconductor structure, we show that the optical signal of a Mach-Zehnder interferometer can be modulated by applying bias and each arms which constructed by a MIS structure,variation of the electrons and holes concentration at the interface between insulating layer and semiconductor substrate is due to the change inversion by applying position bias on a p-type substrate , that can effectively change the index of refraction of the waveguide of each arms of the Mach-Zehnder interferometer. We show that the optical resigned modulation can be achieved with high speed response, and matched to the trend of silicon photonics technology.
目錄
論文審定書 I
誌謝 II
摘要 III
ABSTRACT IV
目錄 V
圖目錄 VII
表目錄 XI
第一章 緒論 1
1.1研究背景 1
1.2研究動機 2
第二章 積體光學元件和材料的介紹 3
2.1積體光學元件的介紹 3
2.1.1 Mach–Zehnder interferometers光學元件 6
2.2矽材料的介紹 9
2.3高介電係數材料 12
2.3.1 氮化鋁結構與材料特性 13
第三章 理論與原理 15
3.1波導理論 15
3.1.1特徵值方程式導理論 15
3.1.2 分散關係曲線及截止頻率 22
3.2 MIS元件原理 26
3.2.1 MIS特性曲域 26
3.2.2 MIS(Metal-Insulator-Semiconductor)和折射率的關係 31
3.2.3 MIS(Metal-Insulator-Semiconductor)和能帶圖的關係 32
第四章 微型干涉儀模擬分析 36
4.1模擬軟體簡介 36
4.2 MIS(Metal-Insulator-Semiconductor)之脊狀波導波導的模擬 38
4.2.1 MIS基本參數設定 38
4.2.2 MIS之Mach-Zehnder干涉儀設計與模擬 41
4.3氮化鋁MIS元件電壓-電流量測與分析 47
4.3.1 MIS之Mach-Zehnder干涉儀分析比較 50
第五章 結論與未來展望 53
5.1結論 53
5.2未來展望 54
參考文獻 55
參考文獻
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