本論文主要探討微型干涉儀光積體元件之光輸出特性，運用金屬氧化半導體（Metal-Insulator-Semiconductor）元件的理論，設計脊狀波導結構Mach Zehnder微型干涉儀的元件，利用具有高折射率的矽材料，藉由MIS結構的矽半導體材料自由載子的產生來調變其折射率的變化，控制光信號的On及Off的特性，形成良好的光電調制開關，利用氮化鋁(Aln)做為絶緣層(insulating layer)的材料，以矽材料做為導光層（waveguide layer），再以空氣（Air）做為基板層（background layer），使用波導基本理論(模態傳播法)、金屬氧化半導體（Metal-Insulator-Semiconductor）元件的理論與模擬軟體(BeamProp Software)來設計光波導元件，模擬Mach Zehnder微型干涉儀光積體元件光的輸出特性。

In this thesis, we demonstrate an optical micro interferometer and its optical output characterizations. using numerical approach of a beam propagation along a silicon base waveguide , and the control of the surface potential in a metal-insulator-semiconductor structure, we show that the optical signal of a Mach-Zehnder interferometer can be modulated by applying bias and each arms which constructed by a MIS structure,variation of the electrons and holes concentration at the interface between insulating layer and semiconductor substrate is due to the change inversion by applying position bias on a p-type substrate , that can effectively change the index of refraction of the waveguide of each arms of the Mach-Zehnder interferometer. We show that the optical resigned modulation can be achieved with high speed response, and matched to the trend of silicon photonics technology.

目錄
論文審定書 I
誌謝 II
摘要 III
ABSTRACT IV
目錄 V
圖目錄 VII
表目錄 XI
第一章 緒論 1
1.1研究背景 1
1.2研究動機 2
第二章 積體光學元件和材料的介紹 3
2.1積體光學元件的介紹 3
2.1.1 Mach–Zehnder interferometers光學元件 6
2.2矽材料的介紹 9
2.3高介電係數材料 12
2.3.1 氮化鋁結構與材料特性 13
第三章 理論與原理 15
3.1波導理論 15
3.1.1特徵值方程式導理論 15
3.1.2 分散關係曲線及截止頻率 22
3.2 MIS元件原理 26
3.2.1 MIS特性曲域 26
3.2.2 MIS（Metal-Insulator-Semiconductor）和折射率的關係 31
3.2.3 MIS（Metal-Insulator-Semiconductor）和能帶圖的關係 32
第四章 微型干涉儀模擬分析 36
4.1模擬軟體簡介 36
4.2 MIS（Metal-Insulator-Semiconductor）之脊狀波導波導的模擬 38
4.2.1 MIS基本參數設定 38
4.2.2 MIS之Mach-Zehnder干涉儀設計與模擬 41
4.3氮化鋁MIS元件電壓-電流量測與分析 47
4.3.1 MIS之Mach-Zehnder干涉儀分析比較 50
第五章 結論與未來展望 53
5.1結論 53
5.2未來展望 54
參考文獻 55

參考文獻
[1] Hélène Debrégeas-Sillard and Christophe Kazmierski, “Challenges and advances of photonic integrated circuits”, C. R. Physique 9 (2008) 1055–1066, (1991).
[2] R. Syms and J. Cozens, “Optical guides waves and devices”,McGraw-Hill Book Company, (1992).
[3] H. Nishihara , M. Haruna, and T. Suhara, “Optical integrated circuits”, McGraw-Hill Book Company, (1989).
[4] R. G. Hunsperger, “Integrated optics: Theory and technology”,Springer, (1995).
[5] D.A. May-Arriojaa, P. LiKamWab, I. Shubinc and P.K.L. Yu “Integrated InGaAsP MQW Mach–Zehnder modulator”, Microelectronics Journal 39 (2008) 660–663
[6] Ce Zhou Zhao, Ai Hua Chen, E. K. Liu, and G. Z. Li , “Silicon-On-Insulator Asymmetric Optical Switch Based on Total Internal Reflection, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 9, NO. 8, AUGUST (1997)
[7] P. dainesi, L. thevenaz and Ph. robert , “Intensity modulation in two Mach–Zehnder interferometers using plasma dispersion in silicon-on-insulator”, Appl. Phys. B 73, 475–478 (2001)
[8] A. Petraru, J. Schubert, M. Schmid, and Ch. Buchal, “Ferroelectric BaTiO3
thin-film optical modulators”, Appl. Phys. Lett., Vol. 81, No.8, p1375~p1377, (2002).
[9] Thad J. Englert and Jonathan W. BIesi “Induced Optical Reflectivity by Local Variation of Conductivity in MIS Structures ”, IEEE JOURNAL OF QUANTUM ELECTRONICS. VOL. 26, NO. 3,MARCH (1990)
[10] Chih T’sung Shih, Zhi Wei Zeng, and Shiuh Chao “Design and Analysis of Metal-Oxide-Semiconductor–Capacitor Microring Optical Modulator With Solid-Phase-Crystallization Poly-Silicon Gate ”, JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 27, NO. 17, SEPTEMBER 1, (2009).
[11] RICHARDA .SOREF and BRIAN R.B ENNETT, “Electro optical Effects in Silicon”, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL.QE-23 , NO. 1 , JANUARY (1987).
[12] C. Angulo Barrios, V. R. Almeida, R. Panepucci, and M. Lipson, “Electro optic Modulation of Silicon-on-Insulator Submicrometer-Size Waveguide Devices”, JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 21, NO. 10, OCTOBER (2003).
[13] 高建綱, “光通訊平面光波導元件之設計與製程研究” ,國立清華大學工程與系統科學研究所, 博士論文 (2003).
[14] K. Imoto and A. Hori, “High refractive index difference and low loss optical waveguide fabricated by low temperature process”, Electron. Lett., Vol. 29,No. 12, 1123, (1993).
[15] L. S. Yu, Z. F. Guan, Q. Z. Liu, and S. S. Lau, “Silicon on insulator photoelastic optical waveguide and polarizer”, Appl. Phys. Lett., Vol. 66, No.17, 2016, (1995).
[16] P.D.Trinh. S. Yegnanarayanan, and B. Jalali, “Integrated optical directional coupler in silicon-on-insulator,” Electron. Lett., 31, 2097, (1995)
[17] A.G..Rickman, G.T.Reed and F.Namavar , “Silicon-on-insulator optical rib waveguide loss and mode characteristics,” J. Lightwave Technol., 12, 1771, (1994).
[18] 陳家進,“大截面積SOI脊形波導之研究” ,國立中央大學光電研究所,碩士論文(2007).
[19] 林振華, “電子材料”,p6-2-p6-35, (2001).
[20] G. C. F. Yeap, S. Krishnan, and M. R. Lin ,“Fringing-induced barrier
lowering (FIBL) in sub-100 nm MOSFETs with high-K gate dielectrics ,”Electron Lett., vol. 34, no. 11, p1150-1152, (1998).
[21] 江秉儒, “利用雷射濺鍍 AlN 高介電材料於MIS 元件結構之光電特性量測研究” ,高雄大學電機工程研究所, 碩士論文 (2007).
[22] Ch. Papachristos , P. Frangos , “Synthesis of single- and multi-mode Planar optical waveguides by a direct numerical solution of the Gel’fand-Levitan-Marchenko integral equation”, Optics Communications , Vol. 203 , p27-p37 , (2002).
[23] David K. Cheng , “Field and Wave Electromagnetics, 2nd Edition”,Addison-Wesley Publishing Co. , (1989).
[24] James H. Edgar and W. J. Meng, “Chapter 1-3 Crystal structure, “ mechanical properties, thermal properties and refactive index of AlN ”, Properties of Group Ⅲ Nitrides, (1993).
[25] 林偉湟, “利用AlN薄膜材料於MIS結構之製作與特性量測研究” ,高雄大學電機工程研究所, 碩士論文 (2007).
[26] 蔡惠茹, “矽通道波導與光纖耦合之nanotaper設計”,國立清華大學光電研究所, 碩士論文 (2006).
[27] Rsoft Design Group INc ,BeamPROP Manual
[28] 施敏原著、黃調元譯, “半導體元件物理與製作技術” ,國立交通大學出版社,2008. pp.56-79.
[29] Donald A.Neamen原著、李世鴻及陳勝利譯, “半導體物理元件” ,美商麥格羅‧希爾國際股份有限公司,2000. pp.454-459.