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研究生:吳仕賢
研究生(外文):Wu,Shih-Hsien
論文名稱:以紅外線加熱溶膠凝膠法製備摻鎵氧化鋅透明導電薄膜製程參數優化之探討
論文名稱(外文):Investigation on optimizing fabrication parameters of ZnO:Ga transparent conductive films by sol-gel method and infarred heating
指導教授:林克默林克默引用關係
學位類別:碩士
校院名稱:南台科技大學
系所名稱:機械工程系
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2010
畢業學年度:98
語文別:中文
論文頁數:132
中文關鍵詞:氧化鋅變溫霍爾參數最佳化
外文關鍵詞:ZnOVariable Temperature HallParameter Optimization
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本研究是用溶膠凝膠法製作摻鎵與摻鋁氧化鋅薄膜。利用RTA作為前熱處理,並以TF進行後退火處理步驟,進而找出薄膜製程之最佳參數,藉由提高RTA升溫速度、RTA加熱溫度、TF退火溫度與增長TF退火時間來提高薄膜導電性,以獲得較佳之氧化鋅薄膜。
本實驗以醋酸鋅加上甲醇(乙醇)溶劑,再經由摻雜氯化鎵(硝酸鋁)作為鎵(鋁)之摻雜來源,為了使溶液更加穩定還會再添加單乙醇胺,即為鍍膜之溶液。並在Eagle 2000基材上以旋轉塗佈方式覆膜,接著放進RTA進行前熱處理,之後放進TF進行真空後熱處理,完成即可得GZO與AZO薄膜。
使用FE-SEM、UV-Vis與SE三種儀器來檢測薄膜之厚度,並比較其膜厚差異性。在微結構方面使用XRD分析,發現其成長晶面主要以(002)為主。而穿透率在可見光範圍內其穿透率都在80%以上。薄膜電性則由Hall量測得之,並使用四點探針印證其結果是否正確。在O 1s方面,以XPS進行縱深分析不同深度之分佈情形。並使用PL去探討薄膜之結晶品質。
本研究結果顯示在RTA升溫速度為5℃/sec,RTA加熱溫度為500℃,TF退火溫度為600℃且TF退火時間為15分具有最佳之數值,可得GZO(AZO)薄膜電阻率為2.06×10-3(2.99×10-3) Ωcm。
In this study, ZnO:Ga(Al) thin films were deposited by sol-gel method. Using RTA as pre-annealing treatments, and TF as the post-annealing treatments, we intend to find the optimum parameters. In order to obtain better zinc oxide films and to improve the electrical properties of the films, we increased the heating rate, the temperature of the RTA furnace, as well as the the post-annealing temperatures and time in the TF furnace.
In our experiments, zinc acetate dehydrate was added into methanol and ethanol. Then, Gallium(Aluminum) in the form of gallium trichloride(aluminium nitrate) was added. MEA was added as stabilizer. The GZO(AZO) films were deposited by spinning coating on Eagle 2000 substrates. The deposited films were then pre-heated in a RTA furnace. Finally, the films were post-heated in vacuum.
The thicknesses of the films were measured by a FE-SEM, UV-Vis, and a multi-angle SE and then compared. XRD patterns demonstrated that the preferential orientation of the GZO films is the (002) direction. The average transmittance of the samples was over 80% in the visible range. The electrical properties of the films were measured by a Hall measurement and then examined by a four-point probe station. XPS depth profile are mainly used to analyze the influences on the chemical states of oxygen in films. The crystal quality of the films was investigated by a PL.
Experimental results show that the lowest resistivity, 2.06×10-3(2.99×10-3) Ωcm was obtained for the GZO(AZO) films pre-heated at 500℃ for 5℃/sec and post-heated at 600℃ for 15 min.
摘要 I
英文摘要 II
致謝 III
目次 IV
表目錄 VII
圖目錄 VIII
第一章 序論 1
1.1 前言 1
1.2 透明導電薄膜發展趨勢 3
1.3 研究動機與目的 3
1.4 論文架構 4
第二章 文獻回顧與相關理論基礎 5
2.1 透明導電膜 5
2.1.1 透明導電膜之導電機制 5
2.1.2 透明導電膜之光學性質 9
2.1.3 透明導電膜之種類 13
2.1.4 透明導電膜之製備方法 14
2.2 溶膠-凝膠法介紹 15
2.2.1 歷史背景 15
2.2.2 溶膠凝膠法之定義 15
2.2.3 溶膠凝膠法之反應機制 16
2.2.4 溶膠凝膠法之薄膜製備 18
2.3 氧化鋅之性質介紹 20
2.4 氧化鋅之化學組成與鍵結 24
第三章 實驗流程及薄膜特性量測 25
3.1 實驗 25
3.1.1 實驗藥品及材料 25
3.1.2 實驗流程 26
3.2 薄膜特性量測儀器 28
3.2.1 X光繞射儀(X-ray diffraction, XRD) 28
3.2.2 場發射掃瞄式電子顯微鏡(Field-Emission Scanning Electron Microscope, FESEM) 32
3.2.3 X光光電子能譜儀(X-ray photoelectron spectroscope, XPS) 34
3.2.4 分光光譜儀(UV-Vis-NIR Spectrometer) 36
3.2.5 四點探針(Four point probe) 37
3.2.6 霍爾效應量測儀(Hall Effect Measurement System) 38
3.2.7 光致螢光光譜儀(Photoluminescence, PL) 40
3.2.8 光譜式橢圓儀(Spectroscopic Ellipsometry, SE) 40
第四章 實驗結果與討論 46
4.1 TCO薄膜厚度量測 46
4.1.1 SE量測結果 46
4.1.2 SE與SEM膜厚量測比較 51
4.1.3 光譜儀膜厚量測 53
4.2 GZO晶體結構分析 59
4.3 光學性質 69
4.4 電性分析 78
4.5 XPS化學組態分析 97
4.6 螢光光譜儀量測 102
4.7 變溫霍爾量測 107
第五章 結論 111
參考文獻 113
附錄 126
作者簡介 132
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