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研究生:蘇家慧
研究生(外文):Chia-Yi, Su
論文名稱:利用陽極氧化製作氧化鋯薄膜
論文名稱(外文):Exploration of Characteristics in the Thin Films of Zirconium Oxide Prepared by Anodic Oxidation Method
指導教授:胡永柟胡永柟引用關係柯鴻禧柯鴻禧引用關係
指導教授(外文):Yong-Nan, HuHong-Hsi, Ko
口試委員:胡永柟柯鴻禧陳雍宗王中行
口試委員(外文):Yong-Nan, HuHong-Hsi, KoYong-Zong, ChenChung-Shing, Wang
口試日期:2011-07-13
學位類別:碩士
校院名稱:大葉大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2011
畢業學年度:99
語文別:中文
論文頁數:58
中文關鍵詞:鋯金屬陽極氧化原子力顯微鏡四面錐體
外文關鍵詞:Zirconiumanodic oxidationatomic force microscopytetrahedral
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由於積體電路內含密度大幅提升,元件尺寸不斷縮小,超薄氧化層之穿隧效應所產生的電流洩漏致使以二氧化矽做為閘極氧化層的優勢逐漸消失,導致以高介電(High - k)材質來取代二氧化矽的方法受到廣泛的研究與重視。高介電係數氧化物中稀土族元素氧化物也是受到廣泛研究的領城之一,本研究針對稀土族元素中的鋯金屬,採用陽極氧化方法來完成鋯金屬氧化層的製備。經由原子力顯微鏡(AFM)量測薄膜表面、穿透式電子顯微鏡(TEM)量測其剖面圖,不同氧化時間所成長的氧化物薄膜厚度不同、成長層面不同、顆粒大小也不同、薄膜表面粗糙度(Ra)亦有所差異。若再由微觀的角度加以探討,長晶的方向是由底部(基材的表面)往上成核再逐漸堆疊成錐體,各錐體尖端經軟體 做輾平的操作後,所呈現的圖案略有雷同之處,其中以方形及長方形為主,且氧化時間越長, 方形面積有逐漸增大趨勢,表面上所呈現的成長紋路也越複雜。而結晶結構與成長時間卻無相依關係,由量測所得到的結果,發覺所成長的結晶結構皆為四面錐體,但以X光光電子能譜(XPS)對薄膜表面、深層所做的量測結果,卻發現Zr3d的束縛能隨著氧化時間之增長而有逐漸增大的傾向。絕緣特性足以適用於閘極氧化層的場合,故以陽極氧化是可行的方法,希望此一研究成果能做為改善閘極氧化層製程技術的參考。
It has been years that in semiconductor integrated circuit manufacturing, people have successfully used SiO2 as gate dielectric material in MOSFET and other related device. Recently, due to the improvement of semiconductor technique, the size of device has been reducing in order to increase the density of integrated circuit device greatly. For example, one of the techniques is to do shrink by Moore’s Law. Nowadays, by applying metal-oxide-semiconductor, the device can be reduced to nanometer. However, because of the small size of device, the thickness of gate oxidation layer will be reduced which will cause tunneling effect. The leakage current will increase and the characteristic of device will be poorer. For solving the problem of small size of device and the leakage current, the research of high-k material has been updated. The surface morphology of zirconium oxide films was measured by atomic force microscope (AFM), the thickness of oxide film observed from the transmission electron microscopy (TEM), the grown oxide films of which thickness, stacked layers’ structure, grain size and surface roughness (Ra) vary with oxidation time. Observing from the microscopic point of view, the nuclei of zirconium oxide started growing from the bottom (substrate surface) and gradually stacking up into a tetrahedral shape. The steep-grown tetrahedral are squeezed by 3D image processing. The resemble patterns show mainly square and rectangle shapes of which size are growing larger with increasing oxidation time. The crystal structure, showing tetrahedral according to the measurement, seems unrelated to the oxidation time, but the binding energy of Zr3d, measured on surface and depths of the oxidation films by X-Ray Photoemission spectra (XPS), increase with oxidation time. This study, therefore, focuses on the research of gate oxide layer producing technique.
封面內頁
簽名頁
摘要………………………………………………………………iii
ABSTRACT…………………………………………………………iv
致謝………………………………………………………………v
目錄…………………………………………………………………vi
圖目錄………………………………………………………………viii
表目錄………………………………………………………………x

第一章 緒論
1.1研究背景………………………………………………1
1.2研究方法………………………………………………3
1.3論文結構………………………………………………4
第二章 文獻回顧
2.1半導體製程中高介電材料的介紹………………………5
2.2溶膠-凝膠法製備二氧化鋯薄膜之物性和電性研究…8
2.3溶膠-凝膠法製備之二氧化鋯薄膜其化學組成相依之微結構及電子結構之研究………………………………9
2.4應用於先進互補式金氧半電晶體具高功函數差與優異熱穩定性之金屬/高介電係數介電層閘極研究……12
2.5高介電係數金氧半電晶體及低溫多晶矽薄膜電晶體之閘引發汲極漏電流及偏壓溫度不穩定性可靠度之研究……………………………………………………13
2.6氧化鉿薄膜電氣特性與結晶結構之研究與探討………15
第三章 陽極氧化法應用於鋯氧化之研究
3.1實驗規劃………………………………………………18
3.2穿透式電子電子顯微鏡之量測與分析………………20
3.3氧化鋯薄膜表面輪廓特徵之探討……………………27
3.4氧化鋯薄膜之電容-電壓特性………………………44
3.5氧化鋯薄膜之電流-電壓特性………………………46
3.6氧化鋯薄膜之磁滯特性………………………………47
第四章 結論與未來研究方向
4.1結論……………………………………………………52
4.2未來研究方向…………………………………………54
參考文獻……………………………………………………55

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