臺灣博碩士論文加值系統

專利申請中，暫不公開

專利申請中，暫不公開

目 錄
誌謝 I
摘要 III
英文摘要 V
目錄 VII
圖目錄 X
表目錄 XII
第一章 緒論 1
1.1 前言 1
1.2 快閃記憶體技術演進 3
1.2.1 浮動式閘極非揮發性記憶體 3
1.2.2 SONOS非揮發性記憶體 5
1.2.3 Ion-bombarded SONOS-type 非揮發性記憶體 8
第二章 不同離子轟擊的能量對非揮發性記憶體儲存層之探討 11
2.1 研究動機 11
2.2 實驗方法與製程步驟 14
2.3 非揮發性記憶體之特性 18
2.3.1 離子轟擊能量對薄膜的影響 18
2.3.1.1 HRTEM分析 18
2.3.1.2 不同跨電場對特性之影響 18
2.3.2 電荷捕捉/釋放效能 19
2.3.2.1 不同轟擊能量之效益 19
2.3.2.2 離子轟擊主要之效益 20
2.3.3 電荷主要儲存中心位置對特性之影響 22
2.3.3.1 不同位置對 VFB shift 之影響 22
2.3.3.2 電荷陷阱主要增益之探討 23
2.3.4 元件可靠度之分析 23
2.3.4.1 不同轟擊能量對可靠度之影響 23
2.3.4.2 離子轟擊之可靠度探討 24
2.3.5 電荷陷阱在能階上之分佈影響 25
2.3.5.1 電荷儲存能階對電荷捕捉/釋放效能之影響 26
2.3.5.2 電荷儲存能階對可靠度之影響 26
第三章 總結 35
參考文獻 36
附錄
第一章 非揮發性記憶體基本原理 41
1.1 電荷穿隧機制 41
1.1.1 Fowler-Nordheim穿隧 41
1.1.2 Direct穿隧 42
1.1.3 Channel Hot Electron Injection 43
1.2 記憶體可靠度分析原理 43
1.2.1 電荷保存能力(Data Retention) 44
1.2.2 耐久度(Endurance) 45
1.2.3 干擾(Disturbance) 46
第二章 電漿原理簡介 51
2.1 定義 51
2.2 電漿成分與產生 51
2.3 電漿中的碰撞 52
2.3.1 離子化碰撞 52
2.3.2 激發與鬆弛碰撞 53
2.3.3 分解碰撞 54
2.3.4 其他碰撞 54
2.4 平均自由路徑 55
第三章 Discharge-based Multi-pulse Technique (DMP)原理 56

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