臺灣博碩士論文加值系統

專利申請中，暫不公開

專利申請中，暫不公開

誌謝 I
摘要 III
英文摘要 IV
目錄 V
圖目錄 IX
表目錄 XII
第一章 緒論 1
1.1 前言 1
1.2 快閃式記憶體技術演進 2
1.2.1 浮動式閘極非揮發性記憶體 2
1.2.2 SONOS非揮性記憶體 3
1.3 新世代非揮發性記憶體技術 4
1.3.1 簡介 4
1.3.2 磁阻式記憶體(MRAM) 5
1.3.3 鐵電記憶體(FeRAM) 5
1.3.4 相變化記憶體(PCM) 6
1.3.5 電阻式記憶體(ReRAM) 7
1.4 電阻式記憶體的結構、操作方式與傳導機制 8
1.4.1 電阻式記憶體之結構 8
1.4.2 電阻式記憶體之操作方式 9
1.4.2.1 單極性(Unipolar) 9
1.4.2.2 雙極性(Bipolar) 10
1.4.3 電阻式記憶體之傳導機制 11
1.4.3.1 燈絲理論(filament theory) 11
1.4.3.2 金屬離子傳導機制 12
1.4.3.3 氧空缺傳導機制 13
1.5 電阻式記憶體的優勢與未來發展 13
1.6 利用銅電極於SiO2-base之電阻轉換現象 15
1.6.1 文獻回顧 15
1.6.2 研究動機 17
第二章 新穎式的化學浸泡法於SiO2-base電阻式記憶體之研究 29
2.1 前言 29
2.2 未摻雜銅於SiO2-base之元件 29
2.2.1 實驗方法與製程步驟 29
2.2.2 元件量測之結果與討論 30
2.2.3 結論 31
2.3 摻雜銅之SiO2-base電阻式記憶體 32
2.3.1 實驗方法與製程步驟 32
2.3.2 結果與討論 33
2.3.2.1 TEM薄膜分析 33
2.3.2.2 元件之電阻轉換特性 34
2.3.2.3 元件之資料保存能力(Retention) 38
2.3.2.4 元件之耐久力(Endurance) 38
2.3.2.5 元件之均勻性 39
2.3.3 結論 40
第三章 摻雜不同銅濃度於SiO2-base電阻式記憶體之研究 52
3.1 摻雜不同銅濃度之實驗方法與製程步驟 52
3.2 摻雜不同銅濃度之結果與討論 53
3.2.1 分析不同銅濃度之電阻轉換特性 53
3.2.2 分析不同銅濃度之資料保存能力(Retention) 54
3.2.3 分析不同銅濃度之耐久力(Endurance) 55
3.3 結論 56
第四章 總結 61
參考文獻 62

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