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研究生:劉哲維
研究生(外文):Che-Wei Liu
論文名稱:銀對銻化鎵之接面特性
論文名稱(外文):Junction characteristics of Ag contact on GaSb
指導教授:黃文昌黃文昌引用關係
學位類別:碩士
校院名稱:崑山科技大學
系所名稱:電子工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2011
畢業學年度:99
語文別:中文
論文頁數:52
中文關鍵詞:蕭特基二極體銻化鎵能障高度
外文關鍵詞:Schottky diodesGaSbBarrier height
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本論文探討銀/n-型銻化鎵蕭特基二極體之接觸特性,這個二極體經不同的溫度快速熱退火處理後,我們發現銀/銻化鎵蕭特基二極體在快速熱退火350 ℃、45秒後有較好的蕭特基特性。其飽和電流密度為1.29×10-3 A/cm2,能障高度為0.51eV,理想因子為1.39,且藉由諾得函數計算求得串聯電阻為4.56 KΩ。當熱退火溫度升高至400 ℃時,二極體的理想因子變大,且漏電流明顯的增加。在本研究中,同時也利用Cheung’s的函數分別計算能障高度及理想因子更深入探討蕭特基二極體的電氣特性。

The contact characteristics of the Ag/n-GaSb diode were discussed in the paper. As the diode was prepared, it was annealed by rapid thermal annealing system at various of temperature. A best diode characteristic was obtained at 350 ˚C for 45 sec and showed a saturation current density of 1.29×10-3 A/cm2, a Schottky barrier height of 0.51 eV with an ideality factor of 1.39. The series resistance was 4.56 KΩ which was evaluated by Norde function. As the annealed temperature was increased to 400 ˚C, both the ideality factor and reverse leakage current was increased. For a further discussion of the electrical characteristics, the Cheung’s function was also used to evaluate the barrier height and ideality factor of the diode.

中文摘要Ⅰ
英文摘要Ⅱ
致 謝Ⅲ
目 錄Ⅳ
表 目 錄Ⅶ
圖 目 錄Ⅷ
第一章緒論1
1-1文獻回顧1
1-2研究動機3
第二章蕭特基原理4
2-1 蕭特基接觸原理4
2-2電流傳導的三種機制6
2-2-1 熱離子放射(Thermionic Emission,TE)7
2-2-2熱離子場放射(Thermionic-field Emission,FE) 8
2-2-3場放射(Field Emission,FE) 9
2-3蕭特基二極體量測10
2-3-1電流-電壓10
2-3-2諾得方程式11
2-3-3 Cheung’s functions13
第三章實驗步驟與設備介紹15
3-1實驗架構15
3-2實驗材料16
3-3實驗步驟17
3-3-1基板清洗-背面17
3-3-2蒸鍍歐姆接觸及熱處理17
3-3-3基板清洗-正面18
3-3-4濺鍍電極及熱處理18
3-4實驗設備介紹19
3-4-1熱蒸鍍機20
3-4-2快速熱退火爐34
3-4-3射頻磁控濺鍍系統37
3-5 實驗量測設備42
3-5-1I-V量測42
第四章結果與討論43
4-1實驗結果與討論43
4-2銀/銻化鎵蕭特基二極體43
4-2-1銀/銻化鎵蕭特基二極體各個退火溫度下電性特性探討43
第五章結 論49
參考文獻50


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