本論文是研究鋁吸雜效果及鋁吸雜的機制。使用的晶片類型有兩種，一種為P型Cz太陽能等級的晶片，類型為未經蝕刻切片(As-cut)，電阻值範圍為1-100Ω-cm、生命期約為2µs、厚220µm；一種為N型Cz晶圓、類型為單面拋光、電阻值範圍為1-5Ω-cm、生命期約為20µs、厚250µm。實驗中，我們變化鋁膜的厚度、不同的吸雜溫度、不同熱歷程以研究在不同狀態下的吸雜效果。晶片品質的判定以量測少數載子生命期及多數載子遷移率為主。

在P型晶圓部分，研究發現，單面較厚的鋁膜有較好的吸雜效果，但雙面較厚(1µm)的鋁膜及單面較薄(0.3um)的鋁膜則無吸雜效果。在單面鋁膜的狀況下，經800℃緩升緩降吸雜處理的效果最佳，從未處理的晶片生命期2µs上升至吸雜後的20µs，提升了十倍，推測是由於降溫時熱應力的影響。而經過1100℃預先熱處理試片，經900℃吸雜處理後有較佳的吸雜效果，從處理前的晶片生命期約2µs上升至吸雜後的7µs，提升了近四倍。不同升降溫速率也會影響吸雜效果，研究發現，經過緩升緩降吸雜處理後的晶片品質最好，比起快升快降吸雜處理的試片，生命期高出兩至三倍。將處理後的試片製作PN接面，我們發現中性區擴散電流的斜率也高出兩倍。我們推論吸雜效果與氧凝聚物的大小有關。本研究也製作PN 接面以探討鋁吸雜的影響範圍，結果顯示鋁吸雜對於晶片的影響有20-80µm深。

在N型晶圓部分，研究發現，單面鋁膜及雙面鋁膜皆有較好的吸雜效果，在600℃的吸雜處理後，生命期從未處理前的20µs上升至吸雜後的200µs，提升十倍，但生命期會隨著吸雜處理溫度的升高而降低。

This thesis is to study the effect of aluminum gettering and its gettering mechanism. There are two types of wafers used; one is the P-type Cz solar grade wafers without etching (As-cut), resistivity range from 1-100Ω-cm, lifetime about 2μs, 220μm thick; Another one is N-type Cz wafers, single-sided polishing, resistivity range from 1 to 5Ω-cm, lifetime is about 20μs, 250μm thick. In this research, we varied the thickness of aluminum film, gettering temperature and thermal history in order to study the gettering effect under different conditions. The minority carrier lifetime and carrier mobility are mainly measured for characterizing the wafer quality after gettering.
For P-type wafers, we found that single-sided thicker aluminum film has better gettering effect, but double-sided thicker (1μm) and one-sided thinner (0.3μm) aluminum film doesn’t. In the single-layer aluminum condition, heat in 800℃ by slow ramping up and cooling down treatment is the best, and the lifetime has been raised from 2μs before gettering to 20μs after gettering, improved tenfold, presumably due to heat stress in cooling. Others, samples which being pre-annealing at 1100℃, revealed the better result at 900℃ gettering process. Lifetime of the samples raised nearly four times, increased from 2μs to 7μs. Different cooling rate will also affect the gettering efficient. We found that samples with slow ramping and slow cooling gettering revealed the best quality. Comparing with fast ramping and slow cooling, it has two to three times higher in lifetime. When dealing with post-production PN junction, the slope of diffusion current in the neutral region, fast ramping and slow cooling sample is also twice the fast ramping and fast cooling samples. We expect that there was a relationship between oxygen precipitates and gettering effect. This study also explored the extent of aluminum gettering in PN junction, the effect is in 20-80μm.
For N-type wafers, both one-sided and double-sided aluminum gettering have good effect. When heat at 600℃, the lifetime raised from 2μs to 20us, has ten times increase. But lifetime decreased with heat-treatment temperature increased.

摘要 I
Abstract II
誌謝 III
目錄 IV
表目錄 V
圖目錄 VI
第一章 緒論 1
第二章 文獻回顧與動機 2
2-1 文獻回顧 2
2-1-1 少數載子生命期理論 2
2-1-2 晶圓中的雜質 2
2-1-3 鋁吸雜 4
2-2 動機 7
第三章 實驗 8
3-1 樣品規格 8
3-2 實驗流程 8
3-3 儀器機台及測試原理簡介 13
第四章 結果與討論 17
4-1 P型晶圓 17
4-1-1 不同鋁膜厚度的晶片在不同吸雜溫度下的載子生命期變化 17
4-1-2 單面鍍鋁及雙面鍍鋁的晶片在不同吸雜溫度下的載子生命期變化 24
4-1-3有經過預先熱處理的試片 27
4-1-3-1 緩升緩降吸雜熱處理 27
4-1-3-2-2 快升快降吸雜熱處理 30
4-1-3-2-2 快升快降吸雜熱處理 32
4-1-4 不同吸雜熱歷程的比較 34
4-1-5 判定吸雜深度 36
4-2 N型晶圓 40
4-2-1 鋁膜單面雙面吸雜的比較 40
4-2-2 有經過預先熱處理的試片 44
4-2-3 P型與N型綜合討論 46
參考資料 47
第五章 結論 52

第一章
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