本論文分為三個部份，第一部份使用新思科技公司（Synopsys） TCAD-Sentaurus Sband模擬工具研究施加應變在(001)表面且通道方向為[110]之NMOS元件上，對其遷移率的影響。第二部份使用ANSYS模擬軟體探討三種TFT結構，分別為下閘極、雙閘極與上閘極在機械彎曲下，不同撓曲曲率、閘極長度、楊氏係數與材料內部應力係數的應力分析。第三部份探討不同幾何結構對應變InGaAs NMOSFET元件之應力分布與遷移率的影響。

This paper was divided into three parts. With the simulation tool from Synopsys TCAD-Sentaurus Sband, part one studied impact of strain on electron mobility of NMOS with surface orientation of (001) and channel direction of [110]. With ANSYS simulation tool, part two analyzed stress distribution of three type of TFT structure devices, namely bottom gate, double gate and top gate, considering the effects of mechanical bending, gate length Young’s modulus and intrinsic stress in materials. Part three investigated strain impact of geometry structure on electron mobility, InGaAs NMOS using stress simulation tool ANSYS and Kubo-Greenwood mobility formula.

誌謝辭 i
中文摘要 ii
Abstract iii
目錄 iv
表目錄 vi
圖目錄 vii
第一章 簡介 1
1-1 研究架構 1
1-2 奈米級MOSFET背景 1
1-3 可繞式TFT背景 3
1-4 III-V元件介紹 4
第二章 ANSYS介紹 6
2-1 ANSYS軟體模組簡介 6
2-2 ANSYS分析之基本架構 7
2-2-2 求解器 10
2-2-3 後處理器 11
2-3 有限元素分析之基本原理 11
第三章 Sentaurus—Sband介紹 15
3-1 Sband 功能與模型介紹 15
3-1-1 元件結構（Device Structure） 15
3-1-2 次能帶計算（Calculating Subbands） 17
3-1-3 計算遷移率(Calculating Mobility) 22
3-2 應變對能帶之影響 22
3-3 應變對遷移率之影響 26
第四章 TFT撓曲與模擬 32
4-1 非晶矽（amorphous-Silicon，a-Si）電晶體 32
4-2 撓曲曲率變化 35
4-3 TFT尺寸相關性 40
4-4 楊氏係數 43
4-5 材料內部應力（intrinsic stress） 46
4-6 實際電子書/電子紙應力狀態（疊上EPD） 47
第五章 InGaAs NMOSFET模擬 51
5-1 III-V材料相關研究介紹 51
5-2 應力模擬 52
5-3 能帶結構運算 54
5-4 遷移率計算 57
第六章 結論與未來展望 61
參考文獻 62

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