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研究生:劉翊筑
研究生(外文):Yi-Chu Liu
論文名稱:高速低電壓差動訊號傳輸介面設計
論文名稱(外文):A High-Speed Low-Voltage Differential-Signal Interface Design
指導教授:許孟烈盧志文盧志文引用關係
指導教授(外文):Meng-Lieh SheuChih-Wen Lu
口試委員:周懷樸
口試委員(外文):Hwai-Pwu Chou
口試日期:2011-06-08
學位類別:碩士
校院名稱:國立暨南國際大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2011
畢業學年度:99
語文別:中文
論文頁數:49
中文關鍵詞:低電壓差動訊號技術高速介面傳輸器接收器共模回授
外文關鍵詞:Low-Voltage Differential Signaling(LVDS)High speed interfaceTransmitterReceiverCommon-Mode Feedback
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本篇論文主要研究方向為高速的傳輸介面,利用低電壓差動訊號傳輸技術來達到此目的,它包含傳輸器與接收器兩個部份。在傳輸器部分為了達到高速運作,利用交流耦合提供正回授路徑加快轉換的速度,並且利用電流控制電路節省多餘的電流消耗。在接收器方面為了有較大的共模電壓,採用互補式全差動對。此外,為了加快速度,比較器使用折疊疊接方式做設計。
實作方面以台積電提供的TSMC 0.18μm 1P6M CMOS製程進行設計與下線製作,傳輸器面積275μm × 140μm,接收器面積102μm × 96μm。在速度方面傳輸器與接收器可達到2G/bs,而傳輸器與接收器的功率消耗各為27mW與31mW。

This thesis presents a design of high-speed transmitter and receiver for low-voltage different signaling transmission interface. For achieving high-speed operation, an AC-coupled positive feedback path is added into the transmitter circuit for providing high-speed conversion. In addition a current-control circuit is employed to reduce the power dissipation. The receiver uses a complementary differential pair to get a wide range of common voltage. Furthermore, a folded-cascode type comparator is used for high speed operation.
A chip including the circuits of transmitter and receiver was implemented and verified by using TSMC 0.18-μm CMOS technology. The core area of the transmitter and receiver is 275μm × 140μm and 102μm × 96μm, respectively. The transmitter and receiver can operate at 2G/bs. The power consumption of the transmitter and receiver is 27mW and 31mW, respectively.

致謝 I
中文摘要 II
英文摘要 III
目錄 IV
圖目錄 V
表目錄 VII
第一章 緒論 1
1.1. 動機 1
1.2. 研究背景 1
1.3. 論文組織架構 2
第二章 低電壓差動訊號概論 3
2.1. 介紹 3
2.2. 規格 3
2.3. 低電壓差動訊號的基本電路架構 5
2.4. 低電壓差動訊號的優勢 8
2.5. 高速電路設計考量[2][3][4] 9
2.5.1. 反射(Reflect) 9
2.5.2. 串音(Crosstalk) 11
2.5.3. 接地彈跳(Ground Bounce) 12
2.5.4. 眼圖(Eye Diagram) 13
第三章 低電壓差動訊號電路設計 15
3.1. 傳輸器的分析 15
3.1.1. 傳輸器的原理 15
3.1.2. 傳輸器的電路設計 17
3.1.3. 傳輸器的模擬結果 23
3.2. 接收器的分析 26
3.2.1. 接收器的原理 26
3.2.2. 接收器的電路設計 27
3.2.3. 接收器的模擬結果 30
第四章 晶片佈局與量測 37
4.1. 電路佈局 37
4.2. 量測考量 43
4.3. 結果比較 44
第五章 結論 46
參考文獻 48


[1] M. Hedberg and T. Haulin,“I/O family with 200 mV to 500 mV supply
voltage,”in Proc. IEEE International Solid-State Circuits Conf. ISSCC’43, 1997, pp. 340-341.

[2] S.C Wen, “Design and Implementation for Gb/s LVDS I/O Application”, National Chi-Nan University, Master, 2004.

[3] S.H Hsiao,“The Crosstalk Interference and Transmission Channel Model for Power Line Communication System,”Fu-Jen Catholic University, Master, 2006.

[4] Y.H Lin,“Modeling and Solutions for Ground Bounce Noise and Electromagnetic Radiation in High-Speed Digital Circuits,”National Sun Yat-sen University, PHD., 2005.

[5] IEEE Standard for Low-Voltage Differential Signals (LVDS) for Scalable Coherent Interface (SCI), 1596.3 SCI-LVDS standard, IEEE Std 1596.3-1996,Mar.1996.

[6] Electrical Characteristics of Low-Voltage Differential Signaling (LVDS) Interface Circuits, TIA/EIA-644, National Semiconductor Corp., ANSI/TIA/EIA, 1996.

[7] A. Boni, A. Pierazzi,and D. Vecchi,“LVDS I/O interface for Gb/s-per-pin operation in 0.35-μm CMOS,”IEEE J. Solid-State Circuits,vol.36,no.4,pp. 706-711,Apr. 2001.

[8] T. Gabara, W. Fischer, W. Werner, S. Siegel, M. Kothandaraman, P. Metz,and D .Gradl, “LVDS I/O Buffers with a Controlled Reference Circuit,”in Proc.ASIC Con. 1997, pp. 311-315.

[9] L. Jaeseo, et al., “Design and implementation of CMOS LVDS 2.5 Gb/s transmitter and 1.3 Gb/s receiver for optical interconnections,” IEEE International Symposium Circuits and Systems. ISCAS 2001, vol.4, 2001, pp. 702-705.

[10] LVDS Owner’s Manual & Design Guide, National Semiconductor Corp., Apr. 2008.

[11] B. Gunning, et al.,“A CMOS low-voltage-swing transmission-line transceiver,” IEEE International Solid-State Circuits Conf, ISSCC 1992. pp. 58-59.


[12] H. Djahanshahi, F. Hansen, and C. A. T. Salama, “Gigabit-per-second ECL-compatible I/O interface in 0.35μm CMOS,”IEEE J. Solid-State Circuits, vol. 34, no. 8, pp.1074-1083, Aug. 1999.

[13] M. S. J. Steyaert, et al., “ECL-CMOS and CMOS-ECL interface in 1.2μm CMOS for 150-MHz digital ECL data transmission systems,” IEEE J. Solid-State Circuits, vol. 26, pp. 18-24, 1991.

[14] Y. Unekawa, et al., “A 5 Gb/s 8×8 ATM switch element CMOS LSI supporting five quality-of-service classes with 200 MHz LVDS interface,”IEEE International Solid-State Circuits Conf, ISSCC 42nd, 1996, pp. 118-119.

[15] Xiao. P, et al., “A 500 Mb/s, 20-channel CMOS laser diode array driver for a parallel optical bus,” in Proc. IEEE International Solid-State Circuits Conf, ISSCC 1997. pp. 250-251.
[16] G. Mandal and P. Mandal,“Low power LVDS transmitter with low common mode variation for 1GB/s-per pin operation,”in Proc.ISCAS, May 2004,vol.1, pp. 1120-3.

[17] M. Chen,J. Silva-Martinez,M. Nix, and M. E Robinson,“Low-voltage low-power LVDS drivers,” IEEE J. Solid-State Circuits, vol. 40,no.2, pp. 472-479,Feb. 2001.

[18] S. Jamasb, et al.,“A 622 MHz stand-alone LVDS driver pad in 0.18-μm CMOS,”in Proc. IEEE Midwest Conf. Circuits and Systems(MWSCAS),2001, vol.2, pp.610-613.



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