本論文研究之目的，在於對N 型砷化鎵晶圓對不同尺寸接合的界
面形態變化對電性的影響，隨著溫度上升電阻下降，順相介面比反相
介面電性優異，並且做了不同的退火時間來對照界面形態的變化，發
現在相同溫度下介面形態類似。對於原生氧化層的影響也做了研究和
探討，以及在各個不同的條件下，界面形態做了比較。主要目的在於
了解影響N 型砷化鎵晶圓接合的主要因素，並利用穿透式電子顯微鏡
技術來幫助我們對界面形態的進一步了解。

There are some researches about comparing n-GaAs wafers bonding for different contact area of wafers; therefore, this study is mainly about factors affect n-GaAs wafer bonding by observation on the morphology of bonding interface through the use of Transmission Electron Microscopy (TEM). The purpose of this study is to discuss: (1) the effect of morphology of bonding interface of n-GaAs wafer bonding on electrical properties ; (2) the relation
between different annealing time and the morphology of bonding interface; (3) the effect of native oxide on electrical properties. Comparisons of the morphology of bonding interface under different conditions are also presented. By the way , bonding strength for wafer contact is better than chip contact. However, the resistance increased with temperature over 800 °C due to the reduction of EL2 concentration for wafer contact and chip contact . Chip contact make an asymmetric I-V Curve , which looks like a P-N junction.

一、 緒論 1
1.1前言 1
1.2研究動機 2
二、 晶圓接合技術簡介 6
2.1接合理論簡介 6
2.2晶圓接合技術 11
2.3接合變數影響 14
2.4晶圓接合的優點 18
三、 實驗方法 20
3.1實驗流程 20
3.2晶圓試片的製備 20
3.3清洗流程 21
3.4室溫下的接合 23
3.5高溫退火過程 25
3.6電性量測 27
3.7微結構觀察與分析 29
四、 結果與討論 30
4.1實驗整體架構與接合參數考慮 30
4.2介面微觀結構分析 32
4.3電性量測分析 38
五、 結論 52
六、 未來工作 54
參考文獻 55

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