如今產業上的太陽能電池發展多以矽晶圓為主要材料，因為矽晶圓本身材料較貴，且在矽晶圓上產生PN接面 (PN junction) 多是利用離子佈植或雜質擴散的方式，這兩種方式皆是高溫製程，相對的製程成本較高，是以本研究希望以沉積薄膜的方式，在矽晶圓上覆蓋相對摻雜特性的含氫非晶矽薄膜完成異質的PN接面。
因此企圖找出高摻雜濃度 (高導電率) 且低吸收係數的P型含氫非晶矽薄膜，是本研究前半段的目的，因為高導電率、高摻雜的薄膜是較適合應用於製作異質接面太陽能電池。而後半段的目的則是希望對元件做優化的動作，不論是薄膜或基板厚度、半導體─半導體或金屬─半導體接面都是需要被探討並改善的地方，研究中也將針對部分作分析與探討。
實驗中以射頻磁控濺鍍法沉積的P-type a-Si:H薄膜，經過添加硼顆粒於濺鍍源、調變氫氣與氬氣分壓比例和快速熱退火處理後，已具備有高導電率的特性，將其沉積在N-type c-Si基板上，並完成異質接面太陽電池的製作。
研究與分析完本實驗自製的太陽能電池，得到一有1.9%轉換效率的異直接面太陽能電池，其開路電壓VOC約為0.5 V，短路電流密度JSC約為9.6 mA/cm2，填充因子FF約為39.7%。

Silicon wafer is the main material for silicon solar-cell industry. However, to generate a silicon P-N junction solar cell, the material cost and the high-temperature process are expensive. In this study, we aim the deposition of the hydrogenated amorphous silicon (a-Si:H) thin film on the silicon wafer to generate the heterojunction silicon solar cell.
The high doping concentration (high conductivity) and the low absorption coefficient are the important parameters for the P-type a-Si:H thin film, because of the higher doping of the a-Si:H thin film can achieve the higher conversion efficiency of the heterojunction solar cell. We also optimized the thicknesses of the a-Si:H thin film and the substrate wafer to improve the conversion efficiency. Besides, the interfaces of the semiconductor ─ semiconductor and metal ─ semiconductor have been analyzed explored to improve the performance of the solar cells.
The a-Si:H heterojunction solar cells have been fabricated using radio-frequency magnetron sputtering to deposit a P-type a-Si: H film on the N-type Si wafer. The sputtering target is a bulk P-type Si with boron grains on it. We modulated the hydrogen and argon partial pressure ratio and the rapid thermal annealing to control the quality of the P-type a-Si:H thin film. The results show the P-type a-Si:H thin film behaved highly conductive.
After depositing the P-type a-Si:H thin film on the N-type Si substrate to form the heterojunction solar cell, the conversion efficiency of the solar cell is 1.9%, the open circuit voltage VOC is about 0.5 V, the short-circuit current density JSC is about 9.6 mA/cm2 and fill factor FF is about 39.7% .

中文摘要 I
ABSTRACT II
誌謝 III
圖目錄 VII
表目錄 X
第一章 緒論 1
1-1 前言 1
1-2 太陽能電池種類 3
1-3 P-type含氫非晶矽薄膜 (P-type a-Si:H) 5
1-3-1 含氫非晶矽薄膜 5
1-3-2 P-type摻雜原理 7
1-4 文獻回顧 8
1-4-1 利用濺鍍法沉積P-type非晶矽薄膜 8
1-4-2 異質接面 (a-Si/c-Si) 太陽能電池發展 10
1-5 研究動機與目的 10
第二章 基本理論 12
2-1 物理氣相沉積法 (Physical Vapor Deposition, PVD) 12
2-1-1 電漿原理 12
2-1-2 射頻磁控濺鍍原理 14
2-2 太陽能電池的發電原理 16
2-3 異質接面太陽能電池 20
2-3-1 異質接面 (Heterojunction) 20
2-3-2 金屬─半導體接面 22
第三章 實驗設備與分析儀器 24
3-1製程設備 24
3-2 P a-Si:H薄膜量測與分析儀器 25
3-2-1 厚度量測 25
3-2-2 吸收係數與半導體能隙量測 25
3-2-3 暗導電率量測 27
3-2-4 活化能 (activation energy, Ea) 量測 29
3-3太陽能電池轉換效率量測儀器 30
第四章 P-TYPE A-SI:H薄膜製作與分析 31
4-1 P a-Si:H製作流程 31
4-2 實驗參數與設計 33
4-3 摻雜濃度對薄膜的影響 37
4-4 製程壓力對薄膜的影響 40
4-5熱退火對薄膜的影響 41
第五章 HETEROJUNCTION SOLAR CELL製作與分析 46
5-1 Heterojunction Solar Cell製作流程 46
5-2 實驗參數與設計 47
5-3 薄膜 (P a-Si:H) 厚度對元件的影響 50
5-4熱退火處理對元件的影響 52
5-5 基板 (N c-Si) 厚度對元件的影響 54
5-6 背電極歐姆接觸對元件的影響 55
第六章 結論 57
參考文獻 58

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