(3.230.76.48) 您好!臺灣時間:2021/04/12 14:50
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果

詳目顯示:::

我願授權國圖
: 
twitterline
研究生:陳儀憲
研究生(外文):Yi-Hsien Chen
論文名稱:金屬氧化物薄膜電晶體於不同環境與光照下之可靠度與物理機制研究
論文名稱(外文):Investigation on the Physical Mechanism and Reliability of Amorphous InGaZnO4 Thin Film Transistors under Different Environment and Illumination
指導教授:張鼎張
指導教授(外文):Ting-Chang Chang
學位類別:碩士
校院名稱:國立中山大學
系所名稱:物理學系研究所
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:2011
畢業學年度:99
語文別:英文
論文頁數:78
中文關鍵詞:金屬氧化物薄膜電晶體水氣可見光下的可靠度閘極負偏壓的可靠度閘極正偏壓的可靠度
外文關鍵詞:negative bias stressilluminationmoisturea-IGZOpositive bias stress
相關次數:
  • 被引用被引用:0
  • 點閱點閱:202
  • 評分評分:系統版面圖檔系統版面圖檔系統版面圖檔系統版面圖檔系統版面圖檔
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:1
由於金屬氧化物半導體有許多優越的特性,所以近年來已經成為相當熱門的研究領域。例如材料本身在可見光下是透明的,並可以在低溫下沉積製造且擁有相當高的載子移動率。因此,金屬氧化物將於下一新時代的光電元件應用上扮演著重要的角色。
雖然金屬氧化物薄膜電晶體有許多良好的優點,然而它的電性卻會受到環境的影響,例如氧氣、水氣與可見光。在本篇論文中,我們會討論電晶體在不同氣氛下閘極正偏壓的可靠度。然而,在顯示器的應用上,施加在畫素開關上負偏壓的時間比起正偏壓還要來得久。因此元件在閘極負偏壓的可靠度是值得被研究的。同時,元件在當作液晶的畫素開關時,會受到背照光的影響,故元件在可見光下的可靠度亦是相當重要的。
實驗結果顯示非晶態銦鎵鋅氧化物薄膜電晶體的電性會受到氧氣與水氣的影響。我們提出當元件施加閘極正偏壓時,若有水氣分子的存在,會有更多的氧氣分子可吸附在元件的表面,而造成電性的改變;然而,當元件處於閘極負偏壓下,金屬氧化物薄膜電晶體中的缺陷會與水氣結合,導致元件起始電壓與次臨界擺幅大量劣化。此外,吸附在非晶態銦鎵鋅氧化物表面的氧氣分子可藉由可見光的照射而脫附,導致特性曲線大量的偏移。
In recent years, amorphous oxide semiconductors have been studied due to their superior characteristics, such as transparent property, high electron mobility exceeding 10 cm2/V‧s, and can be fabricated on plastic substrates at low temperatures. According to these advantages, a-IGZO thin-film transistors are promising as next-generation electronic devices.
Although a-IGZO TFTs have such unique properties, the electrical performances are strongly dependent on its environment such as oxygen, water and visible light. In this study, the electrical characteristics of a-IGZO TFTs under positive bias stress with different ambient gases have been discussed. In particular, the total duration of the negative gate bias applied on the switching transistor is larger than that of the positive gate bias in display application. Therefore, the electrical stability under negative bias stress is vital to investigate. Moreover, a-IGZO TFT regarded as a panel switch may be exposed to visible light for the application of liquid crystal display. The electrical stability under illumination of visible light is also important to study.
Experiment results show that device characteristics are affected under water-containing oxygen ambience. We indicates that the existence of water molecules can assist more oxygen to adsorb on the a-IGZO surface than the case without water assisting. That cause the variation of transfer curve under positive bias stress. However, the degradations in subthreshold swing and threshold voltage are caused by the state-related adsorption of water molecules under negative bias stress. Furthermore, adsorbed oxygen on the surface of a-IGZO can be desorbed by illumination of visible light, leading to large variation in transfer curve.
Thesis oral examination committee members approval sheet.....................................i
Acknowledgement...........................................................................................................ii
Chinese abstract.............................................................................................................iii
English abstract..............................................................................................................iv
Figure caption................................................................................................................vii
Table caption..................................................................................................................xii
Chapter 1 - Introduction.................................................................................................1
1.1 Overview......................................................................................................................1
1.2 Introduction of oxide semiconductor...........................................................................2
1.3 Motivation...................................................................................................................4
Chapter 2 - Device fabrication and electrical characterization...................................7
2.1 Device fabrication........................................................................................................7
2.2 Electrical characteristics..............................................................................................7
2.2.1 The I-V transfer characteristics................................................................................7
2.2.2 The C-V transfer characteristics.............................................................................10
Chapter 3 - Instruments and device parameter extraction.......................................14
3.1 Instruments and measurement setup.........................................................................14
3.1.1 Instruments.............................................................................................................14
3.1.2 Set up instruments for I-V.......................................................................................15
3.2 Device parameter extraction......................................................................................15
3.2.1 Determination of the threshold voltage..................................................................16
3.2.2 Determination of the field-effect mobility..............................................................17
3.2.3 Determination of the subthreshold swing...............................................................17
3.2.4 Determination of on/off current ratio....................................................................18
Chapter 4 - Results and Discussion.............................................................................21
4.1 Environment-dependent instability of a-IGZO TFTs under positive gate bias stress...............................................................................................................................21
4.2 Negative bias-induced adsorption of moisture in a-IGZO TFTs..............................26
4.3 Photofield-effect in a-IGZO TFTs under Different Environment............................32
Chapter 5 - Conclusion................................................................................................62
Reference.......................................................................................................................64
[1] K. Nomura et al., Nature 432, 488 (2004).
[2] K. Nomura et al., Jpn. J. Appl. Phys. 45, 4303–4308 (2006).
[3] J. Y. Kwon et al., Dig. Tech. Papers, 15th Int. Workshop on Active-Matrix Flatpanel Displays and Devices, 287–290 (2008).
[4] M. C. Sung et al., Proc. IMID2007, 9-1 (2007).
[5] J. K. Jeong et al., Proc. IMID2007, 9-4 (2007).
[6] J. Y. Kwon et al., Proc. IMID2007, 9-3 (2007).
[7] J. K. Jeong et al., Soc. Inf. Display Digest 39, 1 (2008).
[8] M. Ito et al., Proc. Int. Display Workshop/Asia Display 2005, 845 (2005).
[9] M. Ito et al., IEICE Trans. Electron (2007).
[10] J. H. Lim et al., Appl. Phys. Lett. 95 012108 (2009).
[11] W. F. Chung et al., Appl. Phys. Lett. 98 152109 (2011).
[12] T. Kamiya et al., J. Display Technol. 5, 273 (2009).
[13] T. Kamiya et al., J. Display Technol. 5, 468 (2009).
[14] H. Hosono, Journal of Non-Crystalline Solids 352, 851–858 (2006).
[15] J. Y. Kwon et al., 2008 Digest of 15th Int. Workshop on Active-Matrix Flatpanel Displays and Devices 287 (2010).
[16] Y. Matsueda, 2010 Digest of Int. Transistor Conf. 2010, 314 (2010).
[17] T. Kamiya et al., Sci. Technol. Adv. Mater. 11 (2010).
[18] J. K. Jeong et al., Appl. Phys. Lett. 93, 123508 (2008).
[19] J. S. Park et al., Appl. Phys. Lett. 92, 072104 (2008).
[20] K. Nomura et al., Appl. Phys. Lett. 93, 192107 (2008).
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
系統版面圖檔 系統版面圖檔