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研究生:陳柏蓉
研究生(外文):Chen, Bor-Rong
論文名稱:A Synchrotron Radiation Photoemission Study on Clean GaAs(111)A Surface and Gd2O3/GaAs(111)A Interface
論文名稱(外文):以同步輻射光電子發射能譜研究砷化鎵(111)A表面與氧化釓/砷化鎵(111)A介面之電子結構
指導教授:洪銘輝郭瑞年
指導教授(外文):Hong, MinghweiKwo, J. Raynien
口試委員:郭瑞年皮敦文洪銘輝郭瑞年
口試日期:2011-7-1
學位類別:碩士
校院名稱:國立清華大學
系所名稱:材料科學工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2011
畢業學年度:99
語文別:英文
論文頁數:103
中文關鍵詞:砷化鎵氧化釓分子束磊晶同步輻射光電子能譜介面
外文關鍵詞:GaAsGd2O3Molecular Beam Epitaxy (MBE)Synchrotron Radiation Photoemission (SRPRS)Interface
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Abstract
This work presents the in-situ high energy electron diffraction (RHEED), low energy electron diffraction (LEED) and photoemission spectroscopy (PES) studies for the structural and interfacial chemical characterization of molecular beam epitaxy (MBE)-grown fresh n-GaAs(111)A-2x2 surface and MBE-grown 3ML Gd2O3/GaAs(111)A-2x2 interface. The LEED pattern shows that the GaAs(111)A-2x2 surface follows the “Ga vacancy-buckling model.” Surface As 3d and Ga 3d core-level binding energy shifts have been resolved by in-situ synchrotron radiation photoemission (SRPES) from the GaAs(111)A-2x2 surface. The core-level shifts are -231 meV and +282 meV for As and Ga, in agreement with the vacancy-buckling model. On the other hand, the chemical bonding for the Gd2O3/GaAs(111)A-2x2 interface is also resolved by SRPES. The interface is consisted of Ga-O (Ga1+, +771eV), As-O (As1+, +522eV) bonding, and a large amount of unreacted surface atoms. The Ga-O bond will induce excess negative charge on the nearby As atom and create a As 3d surface core-level shift at -635meV.

Table of Content 1
Chapter 1 Introduction 1
1.1. Advanced High κ Gate Dielectrics for III-V Based Semiconductors 1
1.2. Motivation 5
1.3. Objective of the Research 8
Chapter 2 Literature Review 9
2.1. GaAs(111)A Surface Properties 9
2.1.1. Surface Relaxation and Reconstruction 9
2.1.2. GaAs (111) Surfaces and Their Reconstructions 11
2.1.3. GaAs (111)A-2x2 Reconstructed Surface Structure 12
2.1.4. Charge compensation and charge transfer on GaAs(111)A surface 16
2.2. Photoemission Study of GaAs(111)A surface 19
2.2.1. Photoemission Study of Clean GaAs(111)A surface 19
2.2.2. Photoemission Study of Chemical Processes on GaAs(111)A Surface 20
2.3. The epitaxial structure of Gd2O3 on Si and GaAs surfaces 21
1.3.1. The Structure of Gd2O3 21
1.3.2. Epitaxial Growth of Gd2O3 on Si 22
Chapter 3 Instrument and Experimental Process 24
3.1. Instrument 24
3.1.1. Molecular Beam Epitaxy (MBE) 24
3.1.2. Photoemission Spectroscopy (PES) 27
3.1.3. Reflection High Energy Electron Diffraction (RHEED) 35
3.1.4. Low Energy Electron Diffraction (LEED) 37
3.2. Experimental Process 39
3.2.1. Sample Growth 39
3.2.2. Analytical Process 43
3.3. Challenges Encountered in SRPES Measurement 51
3.3.1. Sample Charging 51
3.3.2. Photon Induced Oxidation 54
Chapter 4 Results and Discussion -GaAs(111)A-2x2 Clean Surface 56
4.1. RHEED Analysis 56
4.2. LEED Analysis 57
4.3. In-situ XPS Analysis 61
4.3.1. Survey Spectrum 61
4.3.2. As 2p and Ga 2p Core Level Spectra 62
4.3.3. As 3d and Ga 3d Core Level Spectra 64
4.3.4. Valence Band Spectra Analysis 64
4.4. SRPES Analysis 66
4.4.1. Survey Spectrum 66
4.4.2. As 3d and Ga 3d Core Level Spectra 67
4.4.3. Valence Band Analysis 71
5.1. Comparison with Previous SRPES Results on GaAs(111)A-2x2 76
6.1. Deconvolution of Photoemission Spectrum 79
6.1.1. Principle of the Deconvolution Process 79
6.1.2. Chemical Environment of GaAs(111)A Surface 81
6.1.3. Deconvolution of As 3d and Ga 3d Spectra 83
Chapter 5 Results and Discussion: Gd2O3/GaAs(111)A 87
4.1. RHEED Analysis 87
4.2. In-situ XPS Analysis 88
4.2.1. Survey Spectrum 88
4.2.2. As 2p and Ga 2p Core Level Spectra 90
4.2.3. As 3d and Ga 3d Core Level Spectra 91
4.3. Synchrotron Radiation Photoemission Analysis 92
4.3.1. Survey Spectrum 92
4.3.2. As 3d and Ga 3d Core Level Spectra 93
4.3.3. Valence Band Spectra 94
4.4. Deconvolution of Photoemission Spectrum 98
Chapter 6 Conclusion 103

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