臺灣博碩士論文加值系統

氧化鋅(ZnO)，一種Ⅱ-Ⅵ 化合物半導體，其室溫(300K)下導帶與價帶間能隙(bandgap)高達3.37eV，近紫外光能量的能隙，是極具潛力應用於發光二極體、壓電元件、場發射、太陽能電池、光檢測器、全透明電子元件等各式各樣的光電元件材料。目前ZnO面臨最大的問題在於p-type ZnO的製備，因為未摻雜的ZnO本身的缺陷如氧空缺(VO)、間隙鋅(Zni)與背景雜質如氫，造成ZnO本質為n-type半導體，若要轉變為p-type導電性質，則必須透過雜質摻雜。
本研究使用濃膠-凝膠法(Sol-gel method)，採用鋁-氮共摻雜(co-doping of Al and N)的方式，在玻璃基板(glass substrate)上，旋轉塗佈(spin-coating)鍍製膜厚控制在250nm左右的p-type ZnO薄膜。除此之外並加入鎂離子(Mg2+)，調整Mg2+成分比，鍍製寬能隙p-type MgxZn1-xO薄膜，比較不同Mg成分比(x=0-0.05)薄膜間在微結構、電學與光學性質上的差異。
此外，製作奈米結構的p-n同質接面二極體(nanostructured ZnO p-n homojunction diode)，此二極體由p-type ZnO薄膜與n-type ZnO 奈米柱組成，比一般傳統的薄膜型二極體相對具有很大的p-n接面接觸面積，電性量測證實具有典型的p-n整流特性。

目錄
摘要 I
目錄 III
表目錄 VI
圖目錄 VII
第一章 緒論 1
1-1 前言 1
1-2 研究動機 2
第二章 文獻回顧 4
2-1 ZnO發展簡介 4
2-2 p-type 摻雜物比較 6
2-3 使用N 為p-type摻雜物 8
2-4 能隙工程 11
第三章 實驗方法 22
3-1 實驗大綱 22
3-2 鍍製p-type Al-N codoped MgxZn1-xO薄膜 22
3-2-1 基板準備: 22
3-2-2 鍍製步驟說明: 23
3-3 製備奈米結構p-n同質接面二極體 23
3-3-1 基板準備: 23
3-3-2 製備步驟說明: 23
3-4 量測儀器 24
第四章 結果與討論 28
4-1 熱處理溫度對於p-type Al-N codoped ZnO的影響 28
4-1-1 前言: 28
4-1-2 實驗結果與討論: 28
4-1-3 結論: 39
4-2 Mg摻雜量對於p-type Al-N codoped Mg1-xZnxO的影響 41
4-2-1 前言: 41
4-2-2 實驗結果與討論: 41
4-2-3 結論: 47
4-3 N摻雜量對於p-type Al-N codoped Mg0.05Zn0.95O的影響 49
4-3-1 前言: 49
4-3-2 實驗結果與討論: 49
4-3-3 結論: 54
4-4 奈米結構的p-n同質接面二極體 55
4-4-1 前言: 55
4-4-2 實驗結果與討論: 56
4-4-3 結論: 58
第五章 結論 86
第六章 參考文獻 88

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