|
Chapter 1 [1-1] S. S. Hegedus et al., “Handbook of Photovoltaic Science and Engineering” ( 2003). [1-2] Wikipedia, < http://en.wikipedia.org/wiki/Solar_cell> [1-3] 楊德仁,太陽能電池材料, 2008年六月。 [1-4] R. Lüdemann, Mater. Sci. Eng., B58, 86 (1999). [1-5] P. Sana et al., Appl. Phys. Lett., vol. 64, 97 (1994). [1-6] W. Schmidt et al., 16th IEEE Photovoltaic Specialist Conference, 537(1982). [1-7] R. Hezel and R. Schörner, J. Appl. Phys., vol. 52, 3076 (1981). [1-8] J. E. Johnson et al, “Continuous mode hydrogen passivation”, 18th IEEE Photovoltaic Specialists Conference, 1112(1985). [1-9] K. A. Münzer et al, IEEE Trans. Electronic Devices, vol. 46, 2055 (1999). [1-10] T. M. Bruton et al., “Prospects for high efficiency silicon solar cells in thin Czochralski wafers using industrial Processes”, IEEE 28th Photovoltaic Specialist Conference, 180(2000). [1-11] D. H. Neuhaus, and A. Munzer., “Review Article: Industrial silicon wafer solar cells”, Adv. in OptoElectronics, 1(2007). [1-12] R. Preu et al., “Laser-fired contacts – transfer of a simple high efficiency process scheme to industrial production”, IEEE 29th Photovoltaic Specialists Conference, 130(2002). [1-13] E. Schneiderlöchner et al., “Investigations on laser-fired contacts for passivated rear solar cells”, IEEE 29th Photovoltaic Specialists Conference, 300(2002). [1-14] E. Schneiderlöchner et al., Prog. Photovolt: Res. Appl., vol. 10, 29(2002). [1-15] M. Tucci et al., Thin Solid Films, vol. 516, 6767(2008). [1-16] Y. Takahashi et al., Appl. Phys. Express, vol. 1, 085002(2008). [1-17] A. G. Aberle, Prog. Photovolt: Res. Appl., vol. 8, 473 (2000). [1-18] T. Markvart and L. Castafier, “Solar Cells: Materials, Manufacture and Operation” ( 2005). [1-19] H. Mäckel and R. Lüdemann, J. Appl. Phys., vol. 92, 2602(2002). [1-20] O. Schultz et al, Prog. Photovolt: Res. Appl., vol. 16, 317 (2008). [1-21] H. Nagayoshi et al., Jpn. J. Appl. Phys., vol. 36, 5688 (1997). [1-22] R. Hezel et al., J. Electrochem. Soc., vol. 131, 1679 (1984). [1-23] S. W. Glunz et al., J. Appl. Phys., vol. 86, 683 (1999). [1-24] R. Hezel and R. Schörner, J. Appl. Phys., vol. 52, 3076 (1981). [1-25] A. Kaminski et al, Sol. Energy Mater. & Sol. Cells, vol. 72, 373(2002). [1-26] J. Schmidt and A. G. Aberle, Prog. Photovolt: Res. Appl., vol. 6, 259 (1998).
Chapter 2 [2-1] D. A. Neamen , “Semiconductor Physics ﹠Devices” (2002). [2-2] Ji Youn Lee, “Rapid thermal processing of silicon solar cells - passivation and diffusion” ( 2003). [2-3] PVCDROM, http://www.udel.edu/igert/pvcdrom/index.html. [2-4] Institute for Energy Technology (IFE) http://www.ife.no/main_subjects_new/energy_environment/pv/cellpr ocess?set_language=en&cl=en [2-5] Martin A. Green, “solar cells” (1982). [2-6] W. Shockley, and H. J. Queisser, J. Appl. Phys., vol. 32, 510(1991). [2-7] T. Tideje et al., IEEE Trans. Electron Devices, vol ED31, 711(1984). [2-8] P. Campbell and M. A. green, IEEE Trans. Electron Devices, vol. ED33, 234 (1986). [2-9] Aberle A. G., Prog. Photovolt.: Res. Appl., vol. 8, 362(2000). [2-10] C. T. Sah, Solid State Electronics, vol.25, 851(1982). [2-11] M. A. Green, IEEE Trans. Electron Devices, vol. Ed 31, 671(1984). [2-12] Schmidt J et al., Prog. Photovolt.: Res. Appl., Vol. 6, 259(1998). [2-13] R. Hezel and K. Jaeger, J. Electrochem. Soc., vol. 136, 518(1989). [2-14] Nicollian E.H. and J.R. Brews, MOS Physics and Technology,(1982). [2-15] Schroder, “Semiconductor Material and Device Characterization” 3rd ed. (2006). [2-16] J. A. Eikelboom et al., Sol. Energy Mater. & Sol. Cells, vol. 36, 169 (1995). [2-17] R. K. Ahrenkiel et al., Sol. Energy Mater. & Sol. Cells, vol. 92, 830 (2008). [2-18] Kunst, M. and G. Beck, J. Appl. Phys., vol. 60, 3558(1986). [2-19] M. Kunst and G. Beck, J. Appl. Phys., vol. 63, 1093 (1988).
Chapter 3 [3-1] J. R. Conrad et al, J. Vac. Sci. Technol., A 8, 3146 (1990). [3-2] N. W. Cheung, Nuclear Instrument and Methods in physics Reasearch, B55, 811 (1991). [3-3] 蔡振明博士論文,電漿離子佈植中鞘層動態分析及其應用,2001 年八月。 [3-4] Paul K. Chu et al., Mater. Sci. Eng., R17, 207(1996). [3-5] John H. Keller, Plasma Source Sci. Technol., vol. 5, 166(1996). [3-6] Michael A. Kieberman and Allan J. Lichtenberg, “Principles of Plasma Discharge and Materials Processing” (1994). [3-7] 李安平博士論文,大氣壓下氦氣的同軸介質屏障放電及表面屏障 放電的特性研究,2006年7月。 [3-8] M. Goldman and N. Goldman, “Corona discharges,” in Gaseous Electronics, vol. 1, Eds. New York: Academic, pp. 219–290 (1978). [3-9] M. Hur and S. H. Hong, J. Phys. D: Appl. Phys., vol. 35, 1946 (2002). [3-10] J. Y. Jeong et al., Plasma Source Sci. Technol., vol. 7, 282(1998). [3-11] S. E. Babayan et al., Plasma Source Sci. Technol., vol. 7, 286(1998). [3-12] Kogelschatz U, IEEE Trans. Plasma Sci., vol. 30, 1400(2002). [3-13] J. R. Roth, Industrial Plasma Engineering Philadelphia, PA:IOP , vol. 1 (1995). [3-14] D. Korzec et al., Surf. Coat. Technol., vol. 503, 174 (2003). [3-15] 魏孝寬博士論文,射頻大氣電漿束之研究,2009年七月。
Chapter 4 [4-1] 蔡振明博士論文,電漿離子佈植中鞘層動態分析及其應用,2001 年八月。 [4-2] Solar simulator datasheet, model: WXS-220S-L2, WACOM. [4-3] WT-2000 user manual, WACOM (2007). [4-4] J. A. Eikelboom et al., Sol. Energy Mater. & Sol. Cells, vol. 36, 169 (1995). [4-5] M. Kunst and G. Beck, J. Appl. Phys., vol. 60, 3558 (1986). [4-6] M. Kunst and G. Beck, J. Appl. Phys., vol. 63, 1093 (1988). [4-7] H. Field, National Center for Photovoltaics Program Review Meeting (1998). [4-8] 汪建民,材料分析,中國材料科學學會,1998年。 [4-9] J. C. Vickeaman, “Surface Analysis” (1997). [4-10] Schroder, “Semiconductor Material and Device Characterization” 3rd ed. (2006). [4-11] Nicollian E.H. and J.R. Brews, MOS Physics and Technology(1982).
Chapter 5 [5-1] I-Wei Wu et al., IEEE Electron Device Lett., vol. 12, 181 (1991). [5-2] T. I. Kamins and P. J. Marcoux, IEEE Electron Device Lett., vol. 1, 159 (1980). [5-3] R. A. Ditizio et al., Appl. Phys. Lett., vol. 56, 1140 (1990). [5-4] K. Baert et al., Jpn. J. Appl. Phys., vol. 32, 2601 (1993). [5-5] S. Qin et al., IEEE Trans. Electron Devices, vol. 45, 1324 (1998). [5-6] J. D. Bernstein et al., IEEE Trans. Electron Devices, vol. 43 1876(1996). [5-7] P. Sana et al., Appl. Phys. Lett., vol. 64, 97 (1994). [5-8] W. Schmidt et al., 16th IEEE Photovoltaic Specialist Conference, 537(1982). [5-9] R. Hezel and R. Schörner, J. Appl. Phys., vol. 52, 3076 (1981). [5-10] J. E. Johnson et al, “Continuous mode hydrogen passivation”, 18th IEEE Photovoltaic Specialists Conference, 1112(1985). [5-11] S. Martinuzzi et al., Sol. Energy Mater. & Sol. Cells, vol. 80, 343(2003). [5-12] N. H. Nickel et al, Appl. Phys. Lett., vol. 62, 3285(1993).
[5-13] B. L. Sopori et al., Sol. Energy Mater. & Sol. Cells, vol. 41-42, 159 (1996). [5-14] A. Rohatgi et al., IEEE Trans. Electron Devices, vol. 47, 987 (2000). [5-15] Y. T. Cheng et al., International Journal of Photoenergy, 634162 , 1(2010). [5-16] F. F. Chen, Electric probe, in Plasma Diagnostic Techniques, p.113~199(1965). [5-17] I. Langmuir, and H. M. Mott-Smith, Phys. Rev., 28, 727(1926). [5-18] A. Orlando, and L. F. Daniel, “Plasma Diagnostics”, 1986. [5-19] J. E. Heidenreich Ⅲet al., J. Vac. Sci. Technol. B, 5, 347(1987). [5-20] Yu. M. Kagan et al.,“Probe Methods in Plasma Research”,Soviet Physics Uspekhi(Russian Vol.81.Nos.3-4 1964) [5-21] Chang L. Tien,John H. Lienhard “Statistical Thermodynamics”(1979). [5-22] 蔡振明博士論文,電漿離子佈植中鞘層動態分析及其應用,2001 年八月。
Chapter 6 [6-1] A. Goetzberger et al., Mat. Sci. Eng. R, vol. 40, 1(2003). [6-2] M. J. McCann et al., Sol. Energy Mater. & Sol. Cells, vol. 68, 135 (2001). [6-3] A. G. Aberle, Prog. Photovolt.: Res. Appl., vol. 8, 473(2000). [6-4] 楊德仁,太陽能電池材料, 2008年六月。 [6-5] K. A. Münzer et al, IEEE Trans. Electronic Devices, vol. 46, 2055 (1999). [6-6] T. M. Bruton et al., “Prospects for high efficiency silicon solar cells in thin Czochralski wafers using industrial Processes”, IEEE 28th Photovoltaic Specialist Conference, 180(2000). [6-7] D. H. Neuhaus, and A. Munzer., “Review Article: Industrial silicon wafer solar cells”, Adv. in OptoElectronics, 1(2007). [6-8] R. Preu et al., “Laser-fired contacts – transfer of a simple high efficiency process scheme to industrial production”, IEEE 29th Photovoltaic Specialists Conference, 130(2002). [6-9] E. Schneiderlöchner et al., “Investigations on laser-fired contacts for passivated rear solar cells”, IEEE 29th Photovoltaic Specialists Conference, 300(2002). [6-10] E. Schneiderlöchner et al., Prog. Photovolt: Res. Appl., vol. 10, 29(2002). [6-11] M. Tucci et al., Thin Solid Films, vol. 516, 6767(2008). [6-12] Y. Takahashi et al., Appl. Phys. Express, vol. 1, 085002(2008). [6-13] Oldwig von Roos, J. Appl. Phys., vol. 49, 3503(1978). [6-14] A. Kaminski et al., Sol. Energy Mater. & Sol. Cells, vol. 72, 373(2002). [6-15] A. W. Blakers et al., Appl. Phys. Lett., vol. 55, 1363(1989).
[6-16] A. Schneider et al., “Comparison of gettering effects during phosphorus diffusion for one- and double-sided emitters”, IEEE 31st Photovoltaic Specialists Conference, 1051( 2005). [6-17] M. Kaes et al., Prog. Photovolt: Res. Appl., vol. 12, 355(2004).
Chapter 7 [7-1] A. G. Aberle, Prog. Photovolt: Res. Appl., vol. 8, 473 (2000). [7-2] T. Markvart and L. Castafier, “Solar Cells: Materials, Manufacture and Operation” ( 2005). [7-3] H. Mäckel and R. Lüdemann, J. Appl. Phys., vol. 92, 2602(2002). [7-4] O. Schultz et al, Prog. Photovolt: Res. Appl., vol. 16, 317 (2008). [7-5] H. Nagayoshi et al., Jpn. J. Appl. Phys., vol. 36, 5688 (1997). [7-6] R. Hezel et al., J. Electrochem. Soc., vol. 131, 1679 (1984). [7-7] S. W. Glunz et al., J. Appl. Phys., vol. 86, 683 (1999). [7-8] R. Hezel and R. Schörner, J. Appl. Phys., vol. 52, 3076 (1981). [7-9] A. Kaminski et al, Sol. Energy Mater. & Sol. Cells, vol. 72, 373(2002). [7-10] J. Schmidt and A. G. Aberle, Prog. Photovolt: Res. Appl., vol. 6, 259 (1998). [7-11] Wikipedia , <http://en.wikipedia.org/wiki/Silicon_dioxide> [7-12] R. Doering, Y. Nishi, “Handbook of Semiconductor Manufacturing Technology” (2007). [7-13] J. Crowell et al., J. Vac. Sci. Technol, A8, 1864 (1990). [7-14] L. Tedder et al., J. Appl. Phys., vol. 69, 7037 (1991). [7-15] M. IslamRaja et al., J. Vac. Sci. Technol., B11, 720 (1993). [7-16] S. Rojas et al., J. Vac. Sci. Technol., B8, 1177 (1990). [7-17] D. Williams and E. Dein, J. Electrochem. Soc., vol. 134, 657 (1988). [7-18] Yanguas-Gil A et al., Surface & Coatings Technol., vol. 200, 881(2005). [7-19] Kurosawa S et al., Thin Solid Films, vol. 506, 176(2006). [7-20] Katsuya Teshimaa et al., Surface & Coatings Technol., vol. 169, 583 (2003). [7-21] J. A. Theil et al., J. Vac. Sci. Technol., A 12, 1365(1994). [7-22] K Li et al., J. Phys. D: Appl. Phys., vol. 37, 588(2004). [7-23] S. Cai et al., J. Appl. Polymer Sci., vol. 44, 135( 1992). [7-24] V. Raballand et al., Appl. Physics Letters, vol. 92, 091502(2008). [7-25] V. Raballand et al, J. Appl. Physics., vol. 105, 083304 (2009). [7-26] Cremona A et al., J. Appl. Physics., vol. 97, 023533(2005). [7-27] A. Bousquet et al., Surface & Coatings Technol., vol. 200, 6517 (2006). [7-28] Schroder, “Semiconductor Material and Device Characterization” 3rd ed. (2006). [7-29] Nicollian et al., MOS Physics and Technol. (1982). [7-30] J. A. Theil et al., J. Vac. Sci. Technol., A 12, 1365(1994). [7-31] Aberle A.G. et al., J. Appl. Phys., vol. 71, 4422 (1992).
|