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研究生:林仲桓
研究生(外文):Lin, Chung-Huang
論文名稱:利用角解析光電子能譜及低能量電子繞射研究鉛(100)薄膜在鍺(100)基底上之電子結構與薄膜性質
論文名稱(外文):Study of the electronic structure and thin film properties of Pb(100) on Ge(100) by Angle-Resolved Photoemission(ARPES) and LEED
指導教授:唐述中
指導教授(外文):Tang, Shu-Jung
口試委員:鄭弘泰鄭澄懋唐述中
口試日期:2011-7-29
學位類別:碩士
校院名稱:國立清華大學
系所名稱:物理學系
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:2011
畢業學年度:99
語文別:中文
論文頁數:46
中文關鍵詞:鉛(100)薄膜角解析光電子能譜低能量電子繞射量子井態
外文關鍵詞:Pb(100) thin filmARPESLEEDQuantum well state
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  • 下載下載:30
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我們利用金原子在鍺(100)基底上形成的c(8x2)結構當作緩衝層,成功地在零下150℃製備原子平坦的鉛(100)薄膜;並利用角解析光電能譜術測量了鉛(100)薄膜量子井態的能帶結構。位在鉛(100)薄膜Γ ¯位置的量子井態能量與厚度的關係可以利Bohr-Sommerfeld量子化規則來計算。此外,我們還發現了鉛(100)的薄膜在升溫至室溫後,會形成兩個領域同時存在的六角形結構,並且此結構是鉛(111)面結構的兩倍大。量測此特殊六角型鉛結構的能帶結構,我們發現在表面布里淵區的邊界上能帶有著分裂的現象。

We successfully grow the Pb(100) thin films on the substrate of Ge(100) by using Au/Ge(100)-c(2x8) reconstructed surface as a template at T=-150℃. Through the thickness dependence of quantum-well-state energies measured by photoemission spec-
troscopy, we found the Pb(100) thin film grow layer-by-layer. By checking the Low Energy Electron Diffraction (LEED) pattern, we observed that the square structure of Pb(100) thin film trans-
forms to a hexagonal structure after being annealed to room temperature, but the size of the special hexagonal lattice was different from that Pb(111) films.

第一章 簡介...............................................................1
第二章 實驗技術與準備.....................................................3
2.1光電子能譜................................................................3
2.1.1三步驟模型.............................................................4
2.1.2角解析光電子能譜.......................................................9
2.2電子動能分析儀...........................................................11
2.3超高真空系統.............................................................13
2.4基底的準備...............................................................14
2.4.1濺鍍槍................................................................14
2.4.2鍺(100)表面重構.......................................................15
2.4.3低能量電子繞射儀......................................................17
2.5薄膜蒸鍍.................................................................20
2.5.1蒸鍍槍................................................................20
2.5.2石英晶體微天平........................................................21
2.5.3金的緩衝層確認........................................................22
第三章 表面態與量子井態..................................................25
3.1表面態...................................................................25
3.2量子井態.................................................................27
3.2.1 Bohr-Sommerfeld相位模型..............................................29
3.2.2量子數................................................................31
第四章 實驗結果與分析....................................................32
4.1鉛薄膜的層狀成長和量子井態能階分析.......................................32
4.1.1層狀成長..............................................................32
4.1.2量子井態能階分析......................................................35
4.2正方形與六角形的鉛薄膜...................................................36
4.2.1正方形的鉛薄膜........................................................36
4.2.2六角形的鉛薄膜........................................................38
4.3鉛薄膜原子結構的模型.....................................................41
第五章 結論..............................................................44
參考文獻....................................................................46

[1] T.C. Chiang, Science 306,1990 (2004)
[2] J.J. Paggel, C.M. Wei, M.Y. Chou, D.A. Luh, T. Miller, T.C. Chiang,
Phys. Rev. B 66 ,233403 (2001)
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Pb on Ge(100) by ARPES and LEED, (2010)
[6] Kan Nakatsuji, Ryota Niikura, Yuki Shibata, Massamichi Yamada , Takushi Iimori ,
and Foumio Komori, Phys. Rev. B 80,081406 (2009)
[7]Hans Lüth, Surfaces and Interfaces of Solid Materials ,Springer
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[11]SQM 160 Rate/Thickness Monitor User’s Guide, LEYBOBD INFICON INC.
[12]Ryota Niikura, Kan Nakatsuji, and Fumio Komori, Phys. Rev. B 83, 035311 (2011)
[13]Kan Nakatsuji, Ryota Niikura, Yuki Shibata, Masamichi Yamda, Takushi Iimori, and
Fumio Komori, Phys. Rev. B 80, 081406 (2009)
[14]T.C, Chiang Photoemission studies of quantum well states in thin film (2000)
[15]Mary Hope Upton, Photoemission Studies of The electronic structures and
Properties of Thin Lead Films, Ph.D. thesism, University of Illinois at Urbana-
Champaign (2005)
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[17]E.W Plummer , W. Eberhardt, Angle-Resolved Photoemission as a Tool for the
Study of Surface



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