本研究以兩種硼矽酸玻璃研製後燒式厚膜電阻，並探討玻璃性質對於無鉛厚膜電阻電性質之影響。電阻油墨以氧化釕(RuO2)和硼矽酸玻璃以90：10體積分率調製，油墨以網板印刷方式印製於氧化鋁基板製作後燒式電阻，經850℃燒成並分別以持溫15、30、60 分鐘作為燒結變數來觀察電阻電性的變化。

兩種玻璃密度相近，但其體電阻、Tg 和Td 溫度等化學性質不同，造成兩種厚膜電阻電性有著極大的差異，研究中並分別添加Nb2O5、MnO2、MoO3、Fe2O3、TiO2 和CuO 作為電阻溫度係數（TCR）調整劑。不同TCR 調整劑的種類和添加量除了造成玻璃物理性質、電阻電性和TCR 值改變之外，部分添加劑還會對電阻層所產生的結晶相有抑制或促進生成的效果。

厚膜電阻中如果出現二次結晶相，由於結晶相成長的方向、分佈、數量無法藉由製程獲得控制，容易造成造成電阻值升高，並且使得量測的各別電阻值差異性也越大，因此在厚膜電阻製程中須避免結晶相的生成。本研究中的兩種玻璃在燒結過程中雖然都會產生結晶相，但可藉由調整持溫時間的長短和添加TCR 調整劑來延遲或抑制結晶相生成，將結晶相對電阻值的影響降到最低。此外結晶相的形狀大小不同，也對電阻值有著不一樣的影響，研究中W 系列產生的結晶相BaAl2Si2O8，形狀為長方形並且晶粒較大，所以造成電阻值上升的情況較為明顯，而Z 系列的結晶相ZnAl2O4 形狀則為晶粒較小的三角形，所以造成的電阻值上升現象較不明顯。

本研究之兩種玻璃電阻可藉由添加不同種類與添加量的TCR 調整劑，調製出一系列廣泛低阻值的電阻油墨，其片電阻值300~30000 (Ω/□)，TCR 值介於-100~1000(ppm/°C)內。

In this study, lead-free thick film resistor pastes were prepared by mixing ruthenium oxide (RuO2) with 90:10 volume ratios of two different kinds of the CaO-B2O3-SiO2 based glass. The resistors were fired on alumina substrates using a post-fired process in our laboratory.

Influences of different process parameters on the electrical properties of the post fired thick film resistors were investigated.Influences of the interactions between the resistors and substrates on the electric properties of the resistor films were also investigated.The densities of two glasses system were similar, their contact angles of liquids on Al2O3 substrates, Tg Td , and crystallization temperature were different, those made sheet resistance varied. Six metal oxides, Nb2O5, MnO2, MoO3, Fe2O3, TiO2, and CuO , were added to the glass to be used as temperature coefficient of resistor (TCR) modifiers of the resistors. The resistor glasses with different types and amounts of TCR modifiers resulted in different elechical properties.

If crystalline phase formed in the Thick film resistors, the direction、distribution and the number of the crystals were difficult to be controlled. Crystalline phase made the resitance increased, therefore formation of crystalline phase should be avoid. In this study, two glass system crystallized during sintering process by adjusting the holding time and addition of TCR modifier it was able to delay or inhibit the crystalline phase formation.

In this study, lead-free resistor pastes were prepared for thick film resistors with sheet resistivities in the range of -100~1000 Ω/□, and TCR values were between -100 and 1000 ppm/℃ with different cationts of TCR modifiers.

中文摘要………………………………………………………………………….Ⅰ
英文摘要…………………….…………………………………………………….II
目錄…………………………………………………………………………….. III
圖目錄…………………………………………………………………………...VI
表目錄.…………………………………..............................................................IX
第一章 前言………………………………………………….………….………..1
第二章 文獻回顧...………..……………………………………………..……….2
2-1 厚膜電阻……………………………….………………………………...2
2-2 基板材料………..……..……………….………………………………...3
2-3 電阻值與電阻溫度係數導體材料…….………….……………….…….4
2-4 電阻導體粒子材料.………….…………….…………………………….5
2-5 電阻玻璃材料…………..……………………….……………………….7
2-6 厚膜電阻的燒結……………………………………..…………………10
2-7 厚膜電阻的導電機構……………………..……………………………12
2-7-1 Pike and Seager’s model……………………………………...12
第三章 實驗方法……………………...………………………………………...16
3-1 樣品製備…….……..……………….………….………………………..16
3-1-1 無鉛電阻油墨製作……………………………………….......16
3-1-1-1 玻璃製備………………………………………........16
3-1-1-2 電阻油墨調製…………………………………........17
3-1-2 厚膜電阻製作…………………………………….…………..20
3-2 性質分析………………..……………………..……………….............21
IV
3-2-1 材料性質量測………………………………………...............21
3-2-1-1 密度………………………………………................21
3-2-1-2 電阻值…………………………………....................22
3-2-1-3 電阻溫度係數……………………………................22
3-2-1-4 材料分析…………………………..………………..22
3-2-2-1 熱分析……………………………...........................22
3-2-2-2 結晶相分析……………………………...................23
3-2-2-3 顯微結構分析……………………………...............23
第四章 結果與討論…………………...………………………………………...24
4-1 無鉛電阻特性….………….………………………………………….24
4-1-1 無鉛電阻玻璃的基本性質……………………………………..24
4-2 表面後燒式電阻的特性……………………………………………..33
4-2-1 未添加調整劑之電阻特性…………………………………..33
4-2-2 添加 TCR 調整劑之電阻的特性…………………………….41
4-3 電阻顯微結構分析...............................................................................57
4-3-1 電阻表面顯微結構分析…………...……………....................57
4-3-2 電阻截面顯微結構分析……………………............................64
第五章 討論…...……………………………………….………………………..67
第六章 結論……………………………………………………………………..69
參考文獻……………………………………………………………………….....70

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