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研究生:陳錦堂
研究生(外文):Chin-Tang Chen
論文名稱:利用嵌入式光子晶體圖形提升氮化鎵發光二極體發光效率之模擬研究
論文名稱(外文):Simulation of Improving Light Extraction Efficiency of GaN-based Light Emitting Diodes by Embedded Photonic Crystal Pattern
指導教授:賴芳儀賴芳儀引用關係
學位類別:碩士
校院名稱:元智大學
系所名稱:光電工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2011
畢業學年度:99
語文別:中文
論文頁數:62
中文關鍵詞:嵌入式光子晶體氮化鎵發光二極體
外文關鍵詞:Embedded Photonic CrystalGaN-based LEDs
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本研究主要在探討利用嵌入式介電質材料提升垂直式氮化鎵發光二極體的發光效率。論文中運用有限時域差分法模擬元件,首先探討的是嵌入式空氣柱,固定晶格常數和空氣柱直徑並且調變空氣柱深度,進而觀察調變空氣柱深度對應到的出光強度之間的關係。此外,再嘗試嵌入的介電質材料有銦錫氧化物和二氧化矽等介電質材料,找出最佳化的條件後,固定晶格常數和介電質柱的深度,並調變其直徑再做進一步的探討。最後,進行元件製程的嘗試,可以發現嵌入式介電質材料之垂直式氮化鎵發光二極體的製程方法是可行的,後續的研究期盼製作出最佳化此元件之發光二極體。

In this research, we study the light extraction enhancement of GaN-based vertical-injection light emitting diodes using embedded dielectric materials. The finite-difference time-domain method is used to simulate the devices. First, the embedded dielectric material is air rod in the simulation. The lattice constant and diameter of embedded air rod is fixed and then the depth of embedded air rod is tuned. Further, the relation between the depth of embedded air rod and the output power is investigated. Besides, the indium tin oxide and SiO2 are tried to embed in the simulation. After finding the optimization, the lattice constant and depth of embedded dielectric materials are fixed and the diameter of embedded dielectric materials is tuned. Finally, the idea of fabricating embedded dielectric GaN-based vertical-injection LEDs is feasible. We expect to optimize the vertical-injection LEDs in the future.

目錄
摘要......................................................Ⅰ
Abstract................................................. Ⅱ
誌謝..................................................... Ⅲ
目錄......................................................Ⅳ
圖目錄....................................................Ⅵ
表目錄....................................................Ⅸ
第一章 序論................................................1
1.1 簡述發光二極體的發展史...........................1
1.2 研究動機.........................................6
第二章 發光二極體之基本理論...............................10
2.1 發光二極體之發光機制............................10
2.2 發光二極體之效率................................12
2.2.1 半導體材料與空氣折射率之間的差異................13
2.2.2 電流分佈不當....................................18
2.3 發光二極體之電特性原理簡介......................21
2.3.1 p-n 接面能帶....................................21
2.3.2 Shockley Equation...............................22
2.4 有限時域差分法........................................25
第三章 模擬結果與討論.....................................28
3.1 模擬架構..............................................28
3.2 模擬結果與分析........................................31
3.2.1 光強度對不同種類嵌入式介電質材料之關係..........31
3.2.2 光強度對不同直徑嵌入式介電質材料之關係..........35
3.3 本章總結..............................................36
第四章 元件製作...........................................37
4.1 介電質材料填入微米及奈米孔洞中..................38
4.2 Embedded ITO wafer之製備........................40
4.3 垂直注入式發光二極體之元件製作..................52
4.4 本章總結........................................59
第五章 結論與未來展望.....................................60
5.1 結論............................................60
5.2 未來展望........................................60
參考資料..................................................61


1. http://www.hi-id.com/atcl/2008/04/Audi-LED/Audi-A1-Sportback-concept-1.jpg
2. http://www.kson.com.tw/images/study_19/image001.jpg
3. http://www.21wenju.com/upfile/images/big/200509270000000053.JPG
4. http://img1.pconline.com.cn/pconline/0907/29/1717661_ledbl.jpg
5. http://www.zm-china.cn/uploadfile/qikan/uploadfile/200904/20090422032513208.jpg
6. http://image.ec21.com/image/hert/oimg_GC03446833_CA03447447/LED_Glow_Flow_Shower.jpg
7.I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, and N. Sawaki, “Effects of AlN buffer layer on crystallographic structure and on electrical and optical-properties of GaN and Ga1-xAlxN films grown on sapphire substrate by MOVPE,” Journal of Crystal Growth, Vol. 98, pp. 209, 1989.
8.S Nakamura, “GaN growth using GaN buffer layer,” Japanese Journal of Applied Physics Part 2-Letters, Vol. 30, pp. L1705, 1991.
9.S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, “High-power InGaN single-quantum-well-structure blue and violet light-emitting-diodes,” Applied Physics Letters, Vol. 67, pp. 1868, 1995.
10. F. M. Steranka, J. Bhat, D. Collins, L. Cook, M. G. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs – Technology status and market applications,” Physica Status Solidi A-Applied Research, Vol. 194, pp. 380, 2002.
11.Elison Matioli, Stacia Keller, Feng Wu, Yong-Seok Choi, Evelyn Hu, James Speck, and Claude Weisbuch, “Growth of embedded photonic crystals for GaN-based optoelectronic devices”, JOURNAL OF APPLIED PHYSICS 106, 024309, 2009
12.Fang-I. Lai, S. C. Ling, C. E. Hsieh, T. H. Hsueh, Hao-Chung Kuo, Senior Member, IEEE, and Tien-Chang Lu, “Extraction Efficiency Enhancement of GaN-Based Light-Emitting Diodes by Microhole Array and Roughened Surface Oxide”, IEEE ELECTRON DEVICE LETTERS, VOL. 30, NO. 5, MAY 2009
13.Joonmo Park, Jin-Kyoung Oh, Kwang-Woo Kwon, Young-Ho Kim, Sung-Soo Jo, Jun Key Lee, and Sang-Wan Ryu, “Improved Light Output of Photonic Crystal Light-Emitting Diode Fabricated by Anodized Aluminum Oxide Nano-Patterns”, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 20, NO. 4, FEBRUARY 15, 2008
14.施敏(S. M. Sze)著,半導體元件物理與製作技術,黃調元譯,二版,國立交通大學出版社,新竹,民國九十一年。
15.E. F. Schubert, Light-Emitting Diodes, 2nd ed., Cambridge Univ. Press, New York, 2006.
16.Dong-Ho Kim, et al. "Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns," Appl. Phys. Lett. 87, 203508 (2005)
17.Sun-Kyung Kim, et al. "Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer," Appl. Phys. Lett. 92, 241118 (2008)
18.S. W. Chae, et al. "Al-based Ohmic reflectors with low leakage currents and high reflectance for p-GaN flip-chip processes," APPLIED PHYSICS LETTERS 90, 201113 (2007)


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