本論文主要探討以有機金屬氣相沈積系統在低壓成長條件下，改變鎂摻雜流率成長p型氮化鎵薄膜試片，藉由二次離子質譜儀、X光繞射儀、霍爾系統及光激螢光光譜儀分析其光電特性。實驗發現低壓下成長之p型氮化鎵試片，在調整鎂摻雜流率後，可以獲得高鎂活化率達2%。經由擬合變溫霍爾實驗資料，求得之鎂受體活化能和補償比分別為85 meV及0.7。此外，在室溫光激螢光光譜中，發現譜峰能量位於3.2 eV，此躍遷導因於淺層施體到淺層鎂受體能階之輻射復合。因此，我們相信在低壓下成長之p型氮化鎵薄膜具有較高的鎂活化率，主要歸功於鎂原子有效摻入鎵原子位置及具有較低的補償施體密度。

The purpose of the investigation is Mg-doped p-GaN films with various Mg flow rates were grown on a sapphire substrate by metal-organic chemical-vapor deposition under low-pressure growth conditions. A high Mg activation efficiency of 2% was achieved by an optimized Cp2Mg flow rate. Fitting the variable-temperature Hall data indicated that the acceptor activation energy and the compensation ratio were 85 meV and 0.7, respectively. In addition, the PL spectrum showed a significant optical emission at about 3.2 eV which was related to the transition from the shallow-donor to the shallow Mg acceptor level. It is therefore believed that the high Mg activation efficiency of p-GaN films was due to the effective Mg incorporation in the Ga site and the low density of compensating donors.

目 錄
書 名 頁 i
論文口試委員審定書 ii
授權書 iii
中文摘要 iv
英文摘要 v
致 謝 vi
目 錄 vii
表 目 錄 viii
圖 目 錄 ix
一、緒論 1
1.1 研究背景與目的 1
1.2低壓成長p型氮化鎵研究動機 2
1.3 研究目標 3
1.4 論文架構 4
二、P型氮化鎵相關成長與光電特性文獻回顧 5
2.1 LED結構中p型氮化鎵層需求 5
2.2 提升p型氮化鎵電洞濃度之研究 6
三、P型氮化鎵薄膜製備及量測設備介紹 15
3.1研究架構與實驗規劃 15
3.2 P型氮化鎵薄膜製備 16
3.3 退火爐管. 16
3.4 二次離子質譜儀 17
3.5 原子力顯微鏡 17
3.6 X光繞射儀 19
3.7 霍爾量測與變溫霍爾原理 19
3.8 光激螢光光譜儀 21
四、低壓成長p型氮化鎵薄膜光電物理特性分析 24
4.1不同鎂摻雜流率之p型氮化鎵試片鎂原子濃度分析 24
4.2鎂摻雜濃度對p型氮化鎵表面形貌之分析 25
4.3鎂摻雜濃度對p型氮化鎵材料結構分析 25
4.4鎂摻雜濃度對p型氮化鎵薄膜霍爾電性分析 26
4.5鎂摻雜濃度對p型氮化鎵光學特性分析 28
五、 結論 30
參考文獻 31
簡歷 45

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