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研究生:廖宜鋒
研究生(外文):Yi-Feng Liao
論文名稱:鎂摻雜效應對低壓有機金屬氣相沈積系統成長之p型氮化鎵薄膜 光電特性研究
論文名稱(外文):The effect of magnesium doping concentration on the characteristics of p-type GaN films grown by metal-organic chemical-vapor deposition
指導教授:柯文政
指導教授(外文):Wen-Cheng Ke
學位類別:碩士
校院名稱:元智大學
系所名稱:先進能源研究所
學門:工程學門
學類:綜合工程學類
論文種類:學術論文
論文出版年:2011
畢業學年度:99
語文別:中文
論文頁數:45
中文關鍵詞:p型氮化鎵活化率霍爾量測活化能光激螢光
外文關鍵詞:p-GaNactivation efficiencyHallactivation energyPL
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本論文主要探討以有機金屬氣相沈積系統在低壓成長條件下,改變鎂摻雜流率成長p型氮化鎵薄膜試片,藉由二次離子質譜儀、X光繞射儀、霍爾系統及光激螢光光譜儀分析其光電特性。實驗發現低壓下成長之p型氮化鎵試片,在調整鎂摻雜流率後,可以獲得高鎂活化率達2%。經由擬合變溫霍爾實驗資料,求得之鎂受體活化能和補償比分別為85 meV及0.7。此外,在室溫光激螢光光譜中,發現譜峰能量位於3.2 eV,此躍遷導因於淺層施體到淺層鎂受體能階之輻射復合。因此,我們相信在低壓下成長之p型氮化鎵薄膜具有較高的鎂活化率,主要歸功於鎂原子有效摻入鎵原子位置及具有較低的補償施體密度。

The purpose of the investigation is Mg-doped p-GaN films with various Mg flow rates were grown on a sapphire substrate by metal-organic chemical-vapor deposition under low-pressure growth conditions. A high Mg activation efficiency of 2% was achieved by an optimized Cp2Mg flow rate. Fitting the variable-temperature Hall data indicated that the acceptor activation energy and the compensation ratio were 85 meV and 0.7, respectively. In addition, the PL spectrum showed a significant optical emission at about 3.2 eV which was related to the transition from the shallow-donor to the shallow Mg acceptor level. It is therefore believed that the high Mg activation efficiency of p-GaN films was due to the effective Mg incorporation in the Ga site and the low density of compensating donors.

目 錄
書 名 頁 i
論文口試委員審定書 ii
授權書 iii
中文摘要 iv
英文摘要 v
致 謝 vi
目 錄 vii
表 目 錄 viii
圖 目 錄 ix
一、緒論 1
1.1 研究背景與目的 1
1.2低壓成長p型氮化鎵研究動機 2
1.3 研究目標 3
1.4 論文架構 4
二、P型氮化鎵相關成長與光電特性文獻回顧 5
2.1 LED結構中p型氮化鎵層需求 5
2.2 提升p型氮化鎵電洞濃度之研究 6
三、P型氮化鎵薄膜製備及量測設備介紹 15
3.1研究架構與實驗規劃 15
3.2 P型氮化鎵薄膜製備 16
3.3 退火爐管. 16
3.4 二次離子質譜儀 17
3.5 原子力顯微鏡 17
3.6 X光繞射儀 19
3.7 霍爾量測與變溫霍爾原理 19
3.8 光激螢光光譜儀 21
四、低壓成長p型氮化鎵薄膜光電物理特性分析 24
4.1不同鎂摻雜流率之p型氮化鎵試片鎂原子濃度分析 24
4.2鎂摻雜濃度對p型氮化鎵表面形貌之分析 25
4.3鎂摻雜濃度對p型氮化鎵材料結構分析 25
4.4鎂摻雜濃度對p型氮化鎵薄膜霍爾電性分析 26
4.5鎂摻雜濃度對p型氮化鎵光學特性分析 28
五、 結論 30
參考文獻 31
簡歷 45


參考文獻:
[1] 柯文政,陳衛國,“ 氮化銦鎵的材料製備與元件開發 ” ,電子月刊,第十五期,P.91-P.101,2009年11月號。
[2] 葉惠青,綠色科技與產業發展現況,2009綠能科技及產業研討會-太陽能電池及LED照明,中華民國九十八年。
[3] 林志勳,LED照明市場趨勢,2009綠能科技及產業研討會-太陽能電池及LED照明,中華民國九十八年。
[4] H.Amano , T.Asahi and I.Akasaki , “ Stimulated emission near ultraviolet at room temperature from a GaN film grown on sapphire by MOVPE using an AlN buffer layer ” , Jpn. J. Appl. Phys. , vol. 29 , L205,1990.
[5] S.Nakamura , N. Iwasa , M.Senoh , and T.Mukai ,“ Hole compensation mechanism of p-type GaN films ,” Jpn. J. Appl. Phys. , vol.31 , pp.1258-1266 ,1992.
[6] T. Tanaka , A. Watanabe , H. Amano , Y. Kobayashi , I. Akasaki , S. Yamazaki , and M. Koike , “ p-type conduction in Mg-doped GaN and A10.08Ga0.92N grown by metalorganic vapor phase epitaxy ”, Appl. Phys. Lett. , vol. 65, pp.593, 1994.
[7] Peter Kozodoy , Huili Xing , Steven P. DenBaars, Umesh K. Mishra , A. Saxler , R. Perrin , S. Elhamri , and W. C. Mitchel , “ Heavy doping effects in Mg-doped GaN” , J. Appl. Phys. , vol. 87 , pp.1832-1835 , 2000.
[8] C. Bayram , J. L. Pau , R. McClintock , and M. Razeghi , “Performance
enhancement of GaN ultraviolet avalanche photodiodes with p-type δ-doping”, Appl.
Phys. Lett. , vol. 92, pp. 241103 , 2008.
[9] G. Kipshidze , V. Kuryatkov , B. Borisov , Yu. Kudryavtsev , R. Asomoza , S. Nikishin , and H. Temkin , “ Mg and O codoping in p-type GaN and AlxGa1-x N (0[10] K. S. Kim , M. S. Han , G. M. Yang , C. J. Youn, H. J. Lee , H. K. Cho , and J. Y. Lee , “ Codoping characteristics of Zn with Mg in GaN ” , Appl. Phys. Lett. , vol. 77 , pp. 1123 , 2000.
[11]Xiong Zhang , Soo-Jin Chua , Peng Li , Kok-Boon Chong, and Wen Wang ,“ Improved Mg-doped GaN films grown over a multilayered buffer ” , Appl. Phys. Lett. , vol. 73, pp.1772-1774 ,1998.
[12] Peter Kozodoy , Yulia P. Smorchkova , Monica Hansen , Huili Xing , Steven P. DenBaars , Umesh K . Mishra , A. W. Saxler , R. Perrin , and W.C.Mitchel , “ Polarization-enhanced Mg doping of AlGaN/GaN superlattices ” , Appl. Phys. Lett. , vol. 75 , pp. 2444-2446 , 1999.
[13]Erik L. Waldron , John W. Graff , and E. Fred Schubert , “ Improved mobilities and
resistivities in modulation-doped p-type AlGaN/GaN superlattices ” , Appl. Phys.Lett. ,
vol. 79 , pp. 2737-2739 , 2001.
[14].Giuliano Coli, K. K. Bajaj, J. Li, J. Y. Lin, and H. X. Jiang,“Linewidths of excitonic luminescence transitions in AlGaN alloys” ,Appl. Phys. Lett.,vol.78, pp.1829-1831 , 2001.
[15].J. Li , K. B. Nam , J. Y. Lin, and H. X. Jiang ,“ Optical and electrical properties of Al-rich AlGaN alloys ”, Appl. Phys. Lett. , vol. 79 , pp.3245-3247, 2001.
[16].Ja-Yeon Kim , Min-Ki Kwon , Seong-Ju Park , Sang Hoon Kim , and Ki-Dong Lee , “ Enhancement of light extraction from GaN-based green light-emitting diodes using selective area photonic crystal ” , Appl. Phys. Lett. , vol.96 , pp.251103, 2010.
[17].I. Florescu , J. C. Ramer , D. S. Lee , and E. A. Armour , “ InGaN / GaN single-quantum-well light-emitting diodes optical output efficiency dependence on the properties of the barrier layer separating the active and p-layer regions ” , Appl. Phys. Lett. , vol. 84 , pp. 5252 , 2004.
[18]S.X. Jin , J. Li , J. Y. Lin , and H. X. Jiang , “ InGaN/GaN quantum well interconnected microdisk light emitting diodes ” , Appl. Phys. Lett. , vol. 77 , pp.3236-3238 , 2000 .
[19].Lee , X. Li , X. Ü. Özgür , H. Morkoç ,T. Paskova , G. Mulholland , and K. R. Evans , “ On carrier spillover in c- and m-plane InGaN light emitting diodes ” , Appl. Phys. Lett. , vol. 7602 , pp. 760224-760224-7, 2010
[20].W. Lee,D. C. Oh, H. Goto, J. S. H, H. J. Lee,T.Hanada,M. W. Cho, andT. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices”, Appl. Phys. Lett.,vol.89, pp. 132117, 2006.
[21].Peter Kozodoy , Monica Hansen , Steven P.DenBaars , and Umesh K.Mishra , “ Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices ” , Peter Kozodoy , Monica Hansen , Steven P. DenBaars , and Umesh K. Mishra , Appl. Phys. Lett. , vol.74 , pp.3681-3683 , 1999.
[22].Peter Kozodoy , Huili Xing , Steven P. DenBaars , and Umesh K. Mishra , A. Saxler , R. Perrin , S. Elhamri , and W. C. Mitchel ,“ Heavy doping effects in Mg-doped GaN ” , J. Appl. Phys. , vol. 87, pp.1832-1835 , 2000.
[23].R.Y. Korotkov , J. M. Gregie , and B. W. Wessels ,“ Electrical properties of p-type GaN:Mg codoped with oxygen ” , Appl. Phys. Lett. , vol.78 , pp.222-224, 2001.
[24].K. S. Kim , M. S. Han , G. M. Yang , C. J. Youn , and H. J. Lee , H. K. Cho and J. Y. Lee ,“ Codoping characteristics of Zn with Mg in GaN ”, Appl. Phys. Lett. , vol.77, pp.1123-1125,2000
[25].L.T. Romano , M. Kneissl , J.E.Northrup , C.G.VandeWalle and D.W. Treat , “ Influence of microstructure on the carrier concentration of Mg doped GaN films ” , Appl. Phys. Lett. , vol. 79 , pp.2734-2736 , 2001.
[26].C.F. Lin and H. C. Cheng , C. C. Chang and G. C. Chi , “ Properties of Mg activation in thermally treated GaN:Mg films ”, J. Appl. Phys. ,vol.88 , pp.6515-6518 , 2000.
[27].Wei-Chih LAI , Meiso Yokoyayama , Shoou-Jinn Chang , Jan-Dar Guo , Chia-hon SheuE , Tsung-yu Chen ,Wen-Chung Tsai , Jian-Shihn Tsang , Shih-Hsiung Chang and Simon M. SZE ,“ Optical and Electrical Characteristics of CO2-Laser-Treated Mg-Doped GaNFilm ” , Jpn.J.Appl.Phys. , vol.39 , pp. L1138-L1140 , 2000.
[28].Tzu-Chi WEN , Shih-Chang Lee , Wei-I Lee , Tsung-Yu Chen , Shin-Hsiung Chan and Jian-Shihn Tsang , “ Activation of p-Type GaN in a Pure Oxygen Ambient ”, Jpn. J. Appl. Phys. , vol. 40 , pp.495 , 2001.
[29].Motoi NAGAMORI , Shuichi ITO , Hiroshi SAITO , Kenji SHIOJIMA , Shuhei YAMADA , Naoki SHIBATA , and Masaaki KUZUHARA , “ Optimum Rapid Thermal Activation of Mg-Doped p-Type GaN ”, Jpn.J.Appl.Phys. ,vol. 47, pp.2865-2867, 2008.
[30].T. Suski, E. Litwin-Staszewska, R. Piotrzkowski , R. CzerneckiM. Krysko , S. GrzankaG. NowakG. Franssen , L. H. Dmowski , M. Leszczynski , P. Perlin , B. Łucznik , I. Grzegory , and R.Jakieła , “Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy”, Appl. Phys. Lett. , vol.93 , pp.172117 , 2008.
[31].DITER K. SCHRODER,「SEMICONDUVTOR MATERIAL AND DEVICE CHARACTERIZATION」,P623-P625 (1998).
[32].蔡毓楨,薛富盛,呂福興,吳宗明,原子力顯微鏡實作訓練教材,五南圖書出版公司,台北,2007。
[33]. P. Vennéguès , M. Benaissa , B. Beaumont , E. Feltin , P. De Mierry , S. Dalmasso , M. Leroux , and P. Gibart , “ Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN ” , Appl. Phys. Lett. , vol. 77, pp. 880-882 , 2000.
[34]. L. T. Romano, M. Kneissl , J. E. Northrup , C. G. Van de Walle and D. W. Treat , “ Influence of microstructure on the carrier concentration of Mg-doped GaN films ”, Appl. Phys. Lett. , vol. 79 , pp. 2734-2736 , 2009.
[35]. Stephan Figge , Roland KroÈger , Tim BoÈttcher , Peter L. Ryder , and Detlef Hommel , “ Magnesium segregation and the formation of pyramidal defects in p-GaN ”, Appl. Phys. Lett. , vol. 81, pp. 4748-4750 , 2002.
[36]. B. Heying , X. H. Wu , S. Keller , Y. Li , D. Kapolnek , B. P. Keller , S. P. DenBaars , and J. S. Speck , “ Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films ”, Appl. Phys. Lett. , vol. 68 , pp.643-645 , 1995.
[37]. T. Tanaka, A. Watanabe, H. Amano, Y. Kobayashi, I. Akasaki, S.Yamazaki, and M. Koike, “p-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy ” ”,Appl. Phys. Lett. ,vol. 65, pp.593-594 ,1994.
[38]. W. GoÈtz , N. M. Johnson , J. Walker , D. P. Bour , and R. A. Street , “ Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition” Appl.Phys. Lett. , vol. 68 , pp. 667-669 , 1996.
[39]. F. A. Ponce , D. P. Bour , W. Götz , and P. J. Wright , “ Spatial distribution of the luminescence in GaN thin films ” , Appl. Phys. Lett. , vol. 68 , pp.57-59 , 1996.
[40]. M. A. Reshchikov, G.-C. Yi, and B. W. Wessels , “ Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities ” , Phys. Rev. B , vol.59 , pp.13176- pp.13182 , 1999.
[41]. E. F. Schubert , I. D. Goepfert , and J. M. Redwing , “ Evidence of compensating centers as origin of yellow luminescence in GaN ” , Appl. Phys. Lett. , vol. 71 , pp.3224 , 1997.
[42] W. GoÈtz , N. M. Johnson , J. Walker , D. P. Bour , and R. A. Street , “ Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition ” , Appl. Phys. Lett. , vol. 68 , pp.667-669 ,1996.
[43] F. Shahedipour and B. W. Wessels , “ Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg ” , Appl. Phys. Lett. , vol. 76 , 3011 (2000).
[44] L. Eckey , U. von Gfug , J. Holst , A. Hoffmann , A. Kaschner, H. Siegle , and C. Thomsen , B. Schineller and K. Heime , M. Heuken, O. SchoÈn , and R. Beccard , “ Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers” , J. Appl. Phys. , vol.84 , pp. 5828-5830 , 1998.
[45] U. Kaufmann , M. Kunzer , M. Maier , H. Obloh, A. Ramakrishnan , B. Santic , and P. Schlotter , “ Nature of the 2.8 eV photoluminescence band in Mg doped GaN”, Appl. Phys. Lett. , vol.72 , pp.1326-1328 , 1998.
[46] S. Hautakangas , J. Oila , M. Alatalo , and K. Saarinen , L. Liszkay*, D. Seghier and H. P. Gislason , “ Vacancy Defects as Compensating Centers in Mg-Doped GaN ”, Phys. Rev. Lett. , vol.90 , pp. 137402-1 - 137404-4 , 2003.


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