臺灣博碩士論文加值系統

本論文之研究主要包含超寬頻RF開關，可切換式頻帶低雜訊放大器以及微型化功率放大器，超寬頻射頻開關主要以基本的串聯式與並聯式的型態組成，再插入一個電感，提升整個頻帶隔離度，隔離度的模擬結果接近-60dB，插入損失也只有-2dB以上，晶片面積為0.31mm2。可切換式頻帶低雜訊放大器，使用current-reuse放大級架構，並且使用串聯共振電路在放大級架構，可以在有限功率消耗下達到最大增益輸出，在頻帶切換上使用一組中央抽頭電感及電晶體開關，達到最小面積的設計。量測方式以on wafer的形式操作，電壓操作在1V整體消耗功率為7.8mW，晶片面積為0.71 mm2，在輸入反射損失以及輸出反射損失皆小於10dB，增益為16.5 dB、18.5 dB、11.6 dB在2.4GHz、3.5 GHz、5.2 GHz，雜訊指數為5.9 dB、3 dB、3 dB在2.4GHz、3.5 GHz、5.2 GHz。微型化功率放大器為一個全積體化雙頻帶AB類的功率放大器，在偏壓電路上使用一個自繞電感以增加電流負載程度，然後在輸出匹配部分使用一個π型匹配網路在串聯一個電感達到兩個頻帶的最大功率輸出阻抗點，模擬結果為輸入反射損失小於-10 dB，輸出功率為19.2dBm、19.68dBm在2.4GHz、3.5 GHz，轉換效率為20.25%、22..4%在2.4GHz、3.5 GHz，晶片面積為1.15 mm2

This study included an ultra-wideband RF switch, a switchable frequency band low-noise amplifier, and a compact power amplifier. The ultra-wideband RF switch was composed of series type and shunt type. To increase isolation on the full frequency band, an inductor was inserted. The simulated isolation was approximately -60 dB, and insertion loss was above -2dB. The total chip size was 0.31 mm². A switchable frequency band low-noise amplifier with a series resonator increases gains at high frequency. To achieve a small chip size, this study used two center-tapped inductors and a switch. The power gain of the LNA is 16.5 dB at 2.4 GHz, 18.5 dB at 3.5 GHz, and 11.6 dB at 5.2 GHz. The noise figures are 5.9 dB at 2.4 GHz, 3 dB at 3.5 GHz, and 3dB at 5.2 GHz. The total chip area is 0.82*0.87 mm². The fully integrated power amplifier is class AB. To enable the device to tolerate a higher current flow, this study constructed inductors personally. A π type circuit and a center-tapped inductor were used for output matching, enabling the matching networks to achieve a small chip area. The output power of the PA is 19.2 dBm at 2.4 GHz and 19.68 dBm at 3.5 GHz. Efficiency is 20 % dB at 2.4 GHz and 22 % at 3.5 GHz. The total chip area is 0.971*1.185 mm².

目錄
書名頁 …i
論文口試委員審定書 …ii
中文摘要 …iii
英文摘要 …iv
誌謝 …v
目錄 …vi
表目錄 …ix
圖目錄 …x

第一章 緒論...1
1.1 研究背景...1
1.2 研究動機...2
1.3 章節概述...4
第二章 超寬頻高隔離度射頻開關...5
2.1 簡介...5
2.2 射頻開關基本參數[3][4]...6
2.2.1 插入損失...6
2.2.2 隔離度...6
2.2.3 1dB壓縮點...7
2.3 CMOS電晶體操作原理[5][6]...8
2.3.1 小訊號模型...8
2.3.2 大訊號模型...10
2.4 超寬頻高隔離度射頻開關...11
2.4.1 簡介...11
2.4.2 模擬與量測結果...16
2.4.3 結果與討論...20
第三章 頻帶可切換式低雜訊放大器...21
3.1 簡介...21
3.2 低雜訊放大器之基本參數[3][4]...22
3.2.1 增益...22
3.2.2 雜訊指數...23
3.2.3 交互調變失真...24
3.3 頻帶可切換式低雜訊放大器...26
3.3.1 簡介...26
3.3.2 電路架構...26
3.3.3 模擬與量測結果...30
3.3.4 結果與討論...36
3.4 具改善之頻帶可切換式低雜訊放大器...38
3.4.1 電路架構...38
3.4.2 模擬與量測結果...41
3.4.3 結果與討論...47
第四章 微型化功率放大器...50
4.1 簡介...50
4.2 功率放大器分類[17]...50
4.3 功率放大器重要參數[18][19]...52
4.3.1 轉換效率...52
4.3.2 鄰近通道干擾功率比(ACPR)與誤差向量振幅(EVM)...53
4.4 Cripps定理[20][21]...54
4.5 負載拉移(Load-Pull) [20][21]...55
4.6 微型化雙頻功率放大器...56
4.6.1 電路架構...57
4.6.2 模擬與量測結果...61
4.6.3 結果與討論...67
第五章 結論...69
VITA...71
參考文獻...72

[1]http://www.gemtek.com.tw/images/products/wimax/WiMax_WIXD_101.gif
[2]高稚淵，「應用於WLAN/WiMAX多頻段降頻器之研製」，元智大學，碩士論文，2008.
[3]D. M. Pozar, Microwave Engineering, 2nd edition. Wiley, New York,1998.
[4]B. Razavi , RF Microelectronics, Prentice Hill, 2003
[5]A. S. Sedra and K. C. Smith, Microelectronic Circuits, 5th edition, Oxford University Press, 2004.
[6]歐振宇，「24-GHz與60-GHz CMOS收發開關與次諧波及摺疊混波器毫米波射頻晶片之研製」，國立成功大學，碩士論文，2008.
[7]M. C. Yeh, Z. M. Tsai, R. C. Liu, K. Y. Lin, Y. T. Chang, H. Wang, ” Design and analysis for a miniature CMOS SPDT switch using body-floating technique to improve power performance, “IEEE Transactions Microwave Theory and Techniques, vol.54, no.1, pp. 31-39, Jan. 2006.
[8]N.A. Talwalkar, C. P. Yue, G. Haitao, S. S. Wong,” Integrated CMOS transmit-receive switch using LC-tuned substrate bias for 2.4GHz and 5.2GHz applications,“ IEEE Journal Solid-State Circuits, vol.39, no.6, pp.863-870, June 2004.
[9]C. Y. Cha, S. G. Lee,”A 5.2-GHz LNA in 0.35-μm CMOS Utilizing Inter-Stage Series Resonance and Optimizing the Substrate Resistance, “ IEEE Journal Solid-State Circuits, vol. 38, pp. 669–672, Apr. 2003.
[10]H. Hashemi, A. Hajimiri,"Concurrent dual-band CMOS low noise amplifiers and receiver architectures, “Symposium on VLSI Circuits, 2001, Kyoto, Japan, pp. 247–250.
[11]Y. J. Lin, Shawn S. H. Hsu, J. D. Jin, C.Y. Chan, ” A 3.1–10.6 GHz Ultra-Wideband CMOS Low Noise Amplifier With Current-Reused Technique , “IEEE Microwave and Wireless Components Letters , vol. 17, no.3, pp. 669–672, Mar. 2007.
[12]H. J. Yoo, K. H. Lee, H. J. Oh, Y. S. Eo, ”A fully integrated 2.4/3.4 GHz Dual-band CMOS power amplifier with variable inductor, “ 2009 EuMIC, European, pp. 371–374.
[13]C.Y. Kao, Y.T. Chiang, J.R. Yang, ”A Concurrent Multi-Band Low-Noise Amplifier for WLAN/WiMAX Applications, “ 2008 IEEE International Conference on Electro/ Information Technology (EIT 2008) , Ames , USA, May 2008, pp.514-517.
[14]W. C. Li, C. S. Wang, C. K. Wang,” A 2.4-GHz/3.5-GHz/5-GHz Multi-Band LNA with Complementary Switched Capacitor Multi-Tap Inductor in 0.18gm CMOS, “ 2006 International Symposium on VLSI Design, Automation and Test, Hsinchu, Taiwan, April 2006, pp.1-4.
[15]C. H. Liu, C. N. Cai, R. L. Wang, Y. K. Su,”A dual-band current-reused low noise amplifier for 2.3 and 5.2 GHz applications, “ 2008 Asia-Pacific Microwave Conference, Hong Kong and Macau, China, pp.1-4.
[16]G. Gramegna, M. Paparo, P. G. Erratico, P. De Vita, ”A sub-1-dB NF±2.3-kV ESD-Protected 900-MHz CMOS LNA, “ IEEE Journal of Solid-State Circuits, vol. 36, no. 7, pp. 1010-1017, July 2001.
[17]Andrei Grebennikov, RF and Microwave Power Amplifier Design, 2nd edition, McGraw-Hill 2005.
[18]許琮富，「應用於WiMAX 系統之功率放大器設計」，國立台南大學，碩士論文，2005.
[19]傅延宗，「2.4GHz 功率放大器設計與製作」，中華大學，碩士論文，2000.
[20]Steve C.Cripps , RF Power Amplifier for wireless communications,
Artech House , 1999
[21]Guillermo Gonzalez, Microwave Transistor Amplifier, Prentice Hall
1997
[22]G Magnusson, H.; Olsson, H., ”A Compact Dual-Band Power Amplifier Driver for 2.4GHz and 5.2GHz WLAN Transmitters, “ 2007 IEEE Radio Frequency Integrated Circuits Symposium, Hawaii, USA, June 2007, pp.83-86.
[23]D. A. Chan, M. Feng, ”2.5 GHz CMOS power amplifier integrated with low loss matching network for WiMAX applications, “ 2009 Asia Pacific Microwave Conference, Singapore, Dec 2009, pp. 1108-1111.
[24]陳奕成，「應用於WiMAX低耗能收發機前端電路之研製」，元智大學，碩士論文，2010
[25]劉政唐，「應用於WLAN高線性發射機前端之小面積CMOS積體電路研製」，元智大學，碩士論文，2010
[26]林聖傑，「應用於無線網路之射頻發射機電路」，元智大學，碩士論文，2009
[27]江岳庭，「應用於WLAN/WiMAX雙模系統之收發機前端射頻積體電路設計」，元智大學，碩士論文，2009
[28]J. J. Kang, R. M. Weng, C. Y. Liu, ”A low-power CMOS power amplifier for IEEE 802.11a applications, “ 2009 Asia Pacific Microwave Conference, Singapore, Dec. 2009, pp. 1628 – 1630.
[29]S. C. Chang, S. F. Chang, T. Y. Chih, J. A. Tao, ”An Internally-Matched High-Isolation CMOS SPDT Switch Using Leakage Cancellation Technique, “IEEE Microwave and Wireless Components Letters, vol. 17, no. 7, July 2007.
[30]X. Duo, L. R. Zheng, M. Ismail, H. Tenhunen,” A Concurrent Multi-Band LNA forMulti-Standard Radios, “, 2005 IEEE International Symposium on Circuits and Systems, Kobe,Japan , May 2005, pp.3982 – 3985.