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研究生:劉殷銘
研究生(外文):Liu, YinMing
論文名稱(外文):Effect of coexisting (√7×√7) and (5×2) domains on the growth of CoSi2 islands on Si(111)
指導教授:門福國
指導教授(外文):Men, Fu-Kwo
口試委員:門福國李進榮甘宏志楊子萱
口試委員(外文):Men, Fu-KwoLee, Chin-RongKan, Hung-ChihYang, Tzyy-Schiuan
口試日期:2012-07-31
學位類別:碩士
校院名稱:國立中正大學
系所名稱:物理學系暨研究所
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:71
中文關鍵詞:
外文關鍵詞:(√7×√7)(5×2)CoSi2 islandsdiffusion length
相關次數:
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藉由運用掃描穿隧式顯微鏡(STM)和原子力顯微鏡(AFM),磊晶金和鈷在乾淨的Si(111)表面已經被研究許久,而我們在Si(111)-(7×7)的表面上長少量的金(金的覆蓋率<0.5ML),可以形成(7×7)與(5×2)/Au共存的表面,此兩種結構的比率能藉由長金的量來控制。接著磊晶上鈷以後,鈷矽化合物島嶼將形成在(5×2)/Au重構面上,而原本的(7×7)表面將重構成(√7×√7)的結構且在(√7×√7)上不存有任何的鈷矽化合物島嶼,只有磊晶上更高覆蓋量的鈷以後,才會有島嶼的出現,在此展現出了鈷矽化合物島嶼選擇性成長的特性。我們研究島嶼的大小與分佈在一般的(5×2)/Au平台或是相鄰於(5×2)/Au的(5×2)/Au平台,在簡單的擴散模型中計算鈷原子的擴散長度。
Reconstructions introduced by depositing Au and Co on clean Si(111) surface have been studied by scanning tunneling microscopy (STM) and atomic force microscopy (AFM). By depositing a small amount of Au (Au coverage < 0.5 monolayers) onto a clean Si(111)-(7×7) surface, a coexistence of (7×7) and (5×2)/Au structures has been found on the surface. The areal ratio between the two structures can be controlled by Au coverage. After a sub-monolayer Co deposition, CoSi2 islands emerge on the (5×2)/Au domain whereas the (7×7) domain transforms into a (√7×√7) structure without the presence of CoSi2 islands, which would only appear at higher Co coverage, demonstrating a selective growth of islands on a surface. By investigating the size distribution of CoSi2 islands on a wide (5×2)/Au terrace or a collection of neighboring (5×2)/Au terraces, we are able to estimate the diffusion length of Co atoms under a simple diffusion model.
第一章 序論 1
第二章 實驗裝置 2
2.1 Scanning Tunneling Microscopy 2
2.1.1 Principle of scanning tunneling microscopy 2
2.1.2 Low-temperature scanning tunneling microscope 6
2.1.3 Tunneling effect 8
2.1.4 Scan mode 10
2.2 Ultra-high vacuum system 11
2.2.1 Introduction 11
2.2.2 Vacuum pump 12
2.2.3 Ionization gauge 15
2.3 Molecular Beam Epitaxy 17
2.3.1 Introduction 17
2.3.2 E-beam Evaporator 17
2.4 Atomic Force Microscopy 19
2.4.1 Introduction 19
2.4.2 Systems of Atomic Force Microscopy 19
2.4.3 Scanning mode 20
2.4.4 Principle of Atomic Force Microscopy 23
第三章 實驗原理 30
3.1 Silicon 30
3.1.1 Si(111) surface 31
3.1.2 Si(111)-(7×7) reconstruction 32
3.2 Au on Si(111) 33
3.2.1 Au deposited on Si (111)-(7×7) reconstruction 33
3.3  Co deposited on Si(111)-(7×7) 36
3.4 Co on Si(111)-(5×2)/Au 37
3.5 Growth of thin films 38
3.6 Nucleation 39
3.7 Coarsening Phenomena 40
第四章 實驗結果與討論 42
4.1 Introduction 42
4.2 Experimental procedure 43
4.3 Effect of coexisting (√7×√7) and (5×2) domains on the growth of CoSi2 islands on Si(111) 45
4.3.1 CoSi2 islands size vs. terrace width 45
4.3.2 CoSi2 islands size vs. (√7×√7) reconstructure 57
4.3.3 Fick’s 2nd law 61
第五章 結論 64
Reference 65

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[3] R. Pretorius, M.-C. Chen, and H. Ras, “CoSi2 growth: Kinetics, phase sequence and mechanism,” Materials Letters, 3 282–286 1985.

[4] G. Binnig, H. Rohrer, C. Gerber, and E.Weibel, “7 _ 7 reconstruction on Si(111) resolved in real space,” Physical Review Letters, 50 120–123 Jan 1983.

[5] The Low Temperature STM User’s Guide.

[6] K. Takayanagi, Y. Tanishiro, S. Takahashi, and M. Takahashi, “Structure analysis of Si(111)-7_7 reconstructed surface by transmission electron diffraction,” Surface Science, 164 367–392 1985.

[7] A.-L. Chin, Structural transformation and island formation introduced by metal deposition on Si(111) surface. PhD thesis, Department of Physics, National Chung Cheng University, 2010.

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[9] B. Voigtl¨ander, G. Meyer, and N. M. Amer, “Epitaxial growth of thin magnetic cobalt films on Au(111) studied by scanning tunneling microscopy,” Physical Review B, 44 10354–10357 Nov 1991.

[10] R. K. K. Chong, M. Yeadon, W. K. Choi, E. A. Stach, and C. B. Boothroyd, “Nitridemediated epitaxy of CoSi2 on Si(001),” Applied Physics Letters, 82 1833–1835 2003.
[11] P. A. Bennett and H. von K¨anel, “Scanning tunneling microscopy studies of silicide ,”Journal of Physics D: Applied Physics, 32 R71 1999.

[12] C. J. Chen, Introduction to Scanning Tunneling Microscopy. Oxford University Press, 1993.

[13] 鄭積杰, “Formation of (√3 × √3) structure by depositing on Si(111)-(5×2)/Au,” 國立中正大學物理研究所碩士論文(2008).

[14] 詹前峰, “The Si(111)-(5×2)/Au to (√3 × √3) transition induced by Si deposition on the Si(111)-Au surface,” 國立中正大學物理研究所碩士論文(2007).

[15] 張治平, “Island formation during growth of Co on metal-deposited Si(111) surface,” 國立中正大學物理研究所碩士論文(2011).

[16] 許芳嘉,” Growth of islands on vicinal Si(111)surface :The dependence of island formation on terrace width” 國立中正大學物理研究所碩士論文(2011).

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