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研究生:傅曲均
研究生(外文):Fu, Qu-Jun
論文名稱(外文):Effect of restricted terrace width on the growth of islands
指導教授:門福國
指導教授(外文):Men, Fu-Kwo
口試委員:門福國李進榮甘宏志楊子萱
口試委員(外文):Men, Fu-KwoLee, Chin-RongKan, Hung-ChihYang, Tzyy-Schiuan
口試日期:2012-07-31
學位類別:碩士
校院名稱:國立中正大學
系所名稱:物理學系暨研究所
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:78
中文關鍵詞:
外文關鍵詞:silicon
相關次數:
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我們選擇切面方向為 [2 ̅11],切角為 6° 的矽( 111)基板,在表面磊晶0.3ML 的金,使其形成窄的平台( terrace )與階梯聚集的斜面( facets )之週期性交替的結構,並在表面磊晶不同覆蓋量的鈷原子,利用窄的平台寬度使二矽化鈷島嶼沿著階梯成長形成近於一維的排列。我們利用 atomic force microscope 觀察二矽化鈷島嶼的生長情形與覆蓋量的關係。
觀察結果發現寬度介於 20~30 nm 的平台確實可以抑制二矽化鈷島嶼在平台上產生並排的現象,且不會侷限隨著加熱時間及覆蓋量增加而變大的島嶼大小
,另外我們也觀察到島嶼之間的距離會隨著覆蓋量的增加而縮短,也隨著島嶼增大而增長。我們以平均島嶼大小 < d > 與平均島嶼之間的距離<D >之比值對覆蓋量作一關係圖,得到 < d >⁄< D > 值隨著覆蓋量的增加而緩慢上升的關係,與遠距離交互作用主導的表面系統之理論結果符合,驗證二矽化鈷島嶼的成長機制遵循 1⁄r^2 遠距離排斥作用。

In our experiment, Si(111) surfaces with a miscut angle of 6° towards [-2 11] direction have been used. Upon the deposition of 0.3 monolayers of Au onto the surface, the surface forms a periodic structure of alternating narrow (5×2)/Au terraces and facets consisting of 2.2 nm terraces. With the further deposition of Co, CoSi2 islands form on the (5×2)/Au terraces but not in the facets. Atomic force microscope has been used to probe the formation and ordering of the CoSi2 islands.
We have found that terraces with widths between 20 and 30 nm’s can effectively limit the growth of CoSi2 islands in the direction perpendicular to the length of the terrace, i.e., a near one-dimensional island structure forms on the narrow terraces. By studying the average island size as functions of Co coverage and annealing time, we have also found that the average island size grows with Co deposition and annealing time and shows no sign of confinement by the narrow terraces. Both the average island size < d > and the average island-island separation < D > have been determined at different Co coverages and annealing times. A plot of < d >/< D > vs. Co coverage shows a slow increasing trend and agrees with a theoretical model which considers an effective long-range 1/r2 interaction as the predominant interaction between islands with r as the island-island separation.

Contents

學位論文考試審定書
致謝 I
摘要 II
Abstract III
1 Introduction 1
2 Experimental Setup 3
2.1 掃描穿隧電子顯微鏡 5
2.1.1 儀器介紹 5
2.1.2 掃描模式 9
2.1.3 穿隧效應 10
2.2 真空系統 13
2.2.1 真空系統概述 13
2.2.2 真空幫浦 14
2.2.3 離子真空計 18
2.3 分子束磊晶 19
2.3.1 分子束磊晶概述 19
2.3.2 電子束蒸鍍器 19
2.4 原子力顯微鏡 21
2.4.1 儀器介紹 21
2.4.2 凡得瓦力 25
2.4.3 掃描模式 26
3 Theoretical Background 29
3.1 矽 29
3.1.1 矽晶概述 29
3.1.2 矽(111)-(2×1)結構 30
3.1.3 矽(111)-(7×7)結構 31
3.1.4 鈷磊晶於矽(111)-(7×7) 32
3.1.5 金磊晶於矽(111)-(7×7) 34
3.2 薄膜成長 37
3.2.1 薄膜成長機制 37
3.2.2 薄膜成長模式 38
4 Experiment and Analysis 41
4.1 實驗流程 41
4.1.1 實驗流程圖 44
4.2 定金的量 45
4.3 鈷磊晶於矽(111)-(5×2)/Au 47
4.4 分析數據 48
4.5 遠距離交互作用主導的表面系統與尺寸的關係 59
4.6 Co 覆蓋量 62
5 Conclusion 63
Bibliography 64

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