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研究生:周英勛
研究生(外文):Chou, Ying-Shiun
論文名稱:聚(三-己基噻吩)排列性之改善與光電性質研究
論文名稱(外文):Optoelectronic Properties And Improve Directional Of Poly(3-hexylthiophene)
指導教授:蔣見超
指導教授(外文):Tsiang, Chien-Chao
口試委員:林江珍陳志勇廖文城
口試委員(外文):Lin, Jiang-JhenJhen, Jhih-YongLiao, Wun-Cheng
口試日期:2012-07-06
學位類別:碩士
校院名稱:國立中正大學
系所名稱:光機電整合工程研究所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:113
中文關鍵詞:自組裝分子層
外文關鍵詞:Self Assembled Monolayer
相關次數:
  • 被引用被引用:0
  • 點閱點閱:184
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  • 下載下載:3
  • 收藏至我的研究室書目清單書目收藏:0
本研究所使用之rr-P3HT是利用格林置換反應,合成出高立體規則度聚(三-己基噻吩) (rr-Poly(3-hexylthiophene);rr-P3HT)高分子,並且經由陰離子聚合方法來進行末端官能化步驟,合成出末端具有矽氧烷之高分子P3HT-(Si(OCH3)3)2。由核磁共振儀 (Nuclear Magnetic Resonance Spectroscopy, NMR) 驗證結構;能量散射光譜儀 (Energy Dispersive Spectrometer, EDS) 及X射線光電子能儀 (X-ray photoelectron spectroscopy, XPS)探討材料元素;TGA探討熱性質;UV/Vis. 分析,在薄膜態有明顯紅位移且鍵結上Si元素有藍移現象; AFM、XRD 探究結晶性及排列性。

最後,將P3HT-(Si(OCH3)3)2做成有機薄膜電晶體之半導體層,飽和電流從鍵結前11 nA至鍵結後47 nA,mobility從3.75x10-5 cm2/V.s提升至3.44x10-4 cm2/V.s,起始電壓從11V下降至-6V。

The study is to synthesis high regioregular Poly(3-hexylthiophene)(rr-P3HT) by Modified Grignard Metathesis(GRIM), and then functionalize this polymer with a thiol terminal group by anionic polymerization(P3HT-(Si(OCH3)3)2). The structure of polymer has been confirmed by NMR. The element of polymer has been confirmed by EDS and XPS. The thermal properties have been investigated by TGA. The UV-Vis spectrum shows that the thin film samples have red shift compared to the solution samples, and the silicon caused a blue shift of the wavelength. The crystallinity and orientation have been investigated by AFM and XRD.
Finally, P3HT of different molecular weights and corresponding P3HT-(Si(OCH3)3)2 were used as the semi-conducting layer for fabricating Organic Thin Film Transistors(OTFTs). The saturation current increases from 11 nA to 47 nA, the mobility increases from 3.75x10-5 cm2/V.s to the maximal 3.44x10-4 cm2/V.s and the threshold voltage decreases from 11 V to -6V.

中文摘要 I
Abstract II
誌謝 III
目錄 IV
圖目錄 VIII
圖目錄(scheme) XII
表目錄 XIII
第一章 緒論 1
第二章 文獻回顧 3
2.1 共軛高分子 3
2.1.1 共軛高分子之導電機制 3
2.1.2 共軛高分子的能帶理論[3] 5
2.2 聚(三-烷基噻吩)(P3AT)導電性高分子 7
2.2.1 P3AT之合成方法演進 7
2.2.2 格林置換反應(GRIM)反應機制的探討[17] 14
2.2.3 P3AT 側鏈對排列的影響 16
2.2.4 P3AT的光電性質探討 17
2.3 自組裝分子 (Self assembled monolayer, SAM) 18
2.3.1 自組裝分子原理 18
2.3.2 自組裝分子之光電性質探討 19
2.3.3 自組裝分子之應用 22
2.4 有機薄膜電晶體概論 27
2.4.1 有機薄膜電晶體基本構造 29
2.4.2 電晶體基本原理[33-36] 32
2.4.3 有機薄膜電晶體計算公式和重要參數 37
2-5 研究動機 41
第三章 實驗部分 42
3.1 實驗藥品 42
3.2 實驗設備與分析儀器 45
3.3 儀器原理 47
3.3.1核磁共振儀(Nuclear Magnetic Resonance Spectrometer, NMR) 47
3.3.2 X光光電子能譜儀 (X-ray Photoelectron Spectrometer, XPS) 48
3.3.3能量散射光譜儀 ( Energy Dispersive Spectrometer, EDS) 50
3.3.4 X光繞射儀 (X-ray Diffractometer, XRD ) 51
3.3.5紫外光-可見光吸收光譜儀 (UV/Vis spectroscopy, UV/Vis.) 52
3.3.6 原子力顯微鏡 53
3.3.7 熱重損失分析儀 (Thermogravimetric Analyzer ,TGA) 54
3.3.8 光散射 (Light scattering) 55
3.3.9 紫外光臭氧清潔機 (UVO cleaner) 56
3.4 實驗步驟 57
3.4.1 高分子 P3HT 合成 57
3.4.2 P3HT 末端官能基合成 59
3.4.3 有機薄膜電晶體元件製作 61
第四章 結果與討論 63
4.1 前言 63
4.2 高分子之1H-NMR 圖譜鑑定 64
4.3 元素分析 70
4.3.1 EDS 元素分析 70
4.3.2 XPS 元素分析 72
4.4 分子量測定 74
4.5 TGA之熱性質分析 76
4-6 高分子表面分析 78
4.6.1 AFM分析 78
4.6.2 XRD分析 82
4.7 UV/Vis. 吸收光譜分析 84
4-8 有機薄膜電晶體元件特性 86
第五章 結論 93
參考文獻 95


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