臺灣博碩士論文加值系統

本實驗使用溶凝膠法製作非結晶相銪摻雜氧化銦鋅之透明導電薄膜，在500 OC 的燒結溫度下，使其應用於薄膜電晶體之主動層，並製作成銪摻雜氧化銦鋅薄膜電晶體 (EuIZO-TFT)。摻雜銪原子可以抑制氧空缺的產生，減少載子濃度，可降低電晶體漏電流，因為從電負度比較來看銪 (1.0)、鋅 (1.65)、銦 (1.78)、氧 (3.44)，銪與氧的電負度相差較大，因此銪可與氧形成較強的鍵結。在銪、銦、鋅莫爾比= 0.13:1:1 (Eu = 13%) 為最佳之EuIZO-TFT特性，其特性分別為，元件開關比 (Ion/off ) ratio = 1.1×106，臨限電壓 (Vth) = 3.28 V，輸出電流最大值IDS = 3.59×10-4 A，飽和區載子遷移率μSat = 1.23 cm2/Vs，次臨限擺幅值S.S.值= 2.28 V/decade。本篇碩論會探討銪摻雜氧化銦鋅(EuIZO) 的化學劑量、結晶性、電性、光學特性來證明，藉由調變不同銪的莫爾比例，可以達到控制載子濃度並影響電晶體的特性。
另外探討主動層在不同的燒結溫度下 (400、500、600、700 oC)，以及通道之長寬比不同對電晶體之影響，由實驗結果顯示:固定銪、銦、鋅莫爾比 = 0.13:1:1 (Eu = 13 %) 的薄膜電晶體，隨著改變主動層的燒結溫度400 oC至700 oC，載子移動率會逐漸升高，直到700 oC時下降；在固定寬度與改變不同通道長度方面，由實驗結果顯示:固定銪、銦、鋅莫爾比 = 0.13:1:1 (Eu = 13%) 的薄膜電晶體，隨著改變通道長度50至300 nm，汲極電流逐漸增加，載子移動率也從0.6 cm2/Vs增加至1.8 cm2/Vs。

Sol-gel-processed thin-film transistors (TFTs) with amorphours Eu-In-Zn-O (EuIZO) as an active layer were fabricated with various mole ratio of Eu. This behavior indicates that Eu could play the role of carrier suppresspr in InZnO (IZO) systems and reduce off current of Eu IZO-TFT. Because the difference in eletronegativity between Eu (1) and O (3.44) is greater than the difference between Zn (1.65) or In (1.78) and O, the Eu tended to combine with O more strongly than with Zn or In. The optimum EuIZO TFT occurred at a EuIZO mole ratio of 0.13:1:1 and its channel mobility, threshold voltage, subthreshold swing voltage, and on/off ratio were 1.23 cm2/Vs, 3.28 V, 2.28 V/decade, and ~106, respectively. In this master, The stoichiometry , crystallinity, electrical and optical properties of EuIZO films were investigated with the aim of controlling the carrier effect by changing the TFT electrical characteristics through variations in the Eu mole ratio.
In addition to explore the impact of the transistor,by the active layer in the different sintering temperatures (400,500,600,700 oC), and fixed aspect ratio of channel. The results from the experiments show: Eu 13% doped indium oxide thin-film transistor with the change of the active layer of the sintering temperature of 400 oC to 700 oC, the carrier mobility will be gradually increased until 700 oC down;The results from the experiments show: Eu 13% doped indium oxide thin-film transistor with the change the channel length of 50 to 300 nm,, the drain current is gradually increased, mobility is increased from 0.6 cm2/Vs to 1.8 cm2/Vs.

目錄
摘要 II
Abstract IV
誌謝 V
目錄 VII
圖目錄 X
第一章 緒論 1
1-1 前言 1
1-2研究動機 3
1-3論文架構 4
第二章 文獻回顧 5
2-1非結晶相氧化物半導體 (Amorphous Oxide Semiconductor, AOS) 5
2-2 溶膠凝膠法 (sol-gel) 製模技術 6
2-3旋轉塗佈法 9
2-4 非結晶相氧化物薄膜電晶體 10
2-4-1 非結晶相氧化物薄膜電晶體 (AOS TFTs) 優點 10
2-4-2 氧化銦鋅為基礎之四元化合物薄膜電晶體整理 10
2-5 薄膜電晶體操作原理及特性 14
2-5-1 薄膜電晶體 (Thin Film Transistor, TFT) 結構 14
2-5-2 薄膜電晶體 (Thin Film Transistor, TFT) 操作模式 14
2-5-3 薄膜電晶體參數擷取方法 16
第三章 實驗方法與步驟 27
3-1 實驗規劃 27
3-2實驗流程 27
3-2-1 矽基板片清洗流程 27
3-2-2 主動層鍍膜溶液配製流程 28
3-2-3 薄膜電晶體製作流程 29
3-3製程設備介紹 30
3-3-1 旋轉塗佈機 30
3-3-2 管狀爐 30
3-3-3 蒸鍍機 30
3-3-4 曝光燈 31
3-4 光學特性量測儀器 31
3-4-1 紫外-可見分光光譜儀 (UV-Visible Spectrophotometer) 31
3-4-2 光譜式橢圓儀 (Spectroscopic Ellipsometer System) 33
3-5材料分析儀器 34
3-5-1 原子力顯微鏡 (Atomic Force Microscope, AFM) 34
3-6 電性量測儀器 35
3-6-1 霍爾量測儀器 35
3-6-2 電晶體電性量測儀器 36
第四章 實驗結果與討論 50
4-1不同銪含量之EuIZO薄膜分析 50
4-1-1穿透率與光學能隙 (Optical band gap, Eopt) (紫外-可見光光譜儀) 50
4-1-2載子遷移率、載子濃度、電阻率 (四點探針、霍爾效應量測) 50
4-1-3表面粗糙度量測 (AFM) 51
4-2探討有無定義主動層對電晶體特性影響 52
4-3不同摻雜銪濃度對電晶體特性影響 53
4-4不同主動層燒結溫度對電晶體特性影響 56
4-5不同通道比對電晶體特性影響 58
第五章 結論與未來展望 77
5-1 實驗結論 77
5-2未來展望 79
參考文獻 81

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