臺灣博碩士論文加值系統

近年來，能源的枯竭因此發展替代能源的意識抬頭，尤其以太陽能而言更是各國值得深入探討，當中又以聚光型太陽能電池的光電轉換效率最高，然而從材料的選擇、磊晶、電極製作到反射層的選擇均影響元件的特性，成為提升轉換率之研究的重要課題。
在本論文中，我們將對III-V族太陽能電池的元件製作、退火處理、熱影響以及聚光模組的研究做分析，利用TLM模型得到最低的特徵接觸電阻，並實際利用在III-V族單接面(InGaP)、(InGaAs)以及三接面(InGaP/InGaAs/Ge)太陽能電池上以得到較佳的光電特性，以及探討熱對於太陽能電池所帶來的影響；至於在運用於聚光模組上，我們並嘗試回收多餘的光子以達到單位面積的較大轉換效率。

Recently, ,the rising awareness of the development of alternative energy, solar energy has been extensively research for application in renewable energy. On the top of them, the high concentration photovoltaic has the highest conversion efficiency. However, the choice of materials, the electrode design, the material select for solar cell, the optimum of anti-reflection coating were influence conversion efficiency enhancement.
In this study, we will III -V compound solar cell device fabrication annealing, the thermal impact and concentration photovoltaic to do analysis, use TLM get the minimum characteristics of contact resistance, and the actual utilization of III-V single-junction (InGaP), (InGaAs) and three-junction (InGaP / InGaAs / Ge) solar cells get the better optical and electrical properties, and to explore the impact of heat for the solar cell,when used in the concentration photovoltaic, we try to recycle the excess photon in order to achieve the better conversion efficiency of the unit area.

目錄

指導教授推薦書 …………………………………………………………………….i
口試委員會審定書 ………………………………………………………………ii
博碩士論文著作授權書 ………………………………………………………...iii
致謝 ...................................iv
摘要 ....................................v
Abstract .............................vi
目錄 …………………………………………………………………………………vii
表目錄 …………………………………………………………………………….viii
圖目錄 ……………………………………………………………………………...ix
第一章 導論 .....................1
1.1 前言 ..........................1
1.2 太陽能電池介紹 ......1
1.3研究目的與動機 ....9
第二章 實驗原理 …………………………………………………………………..10
2.1 太陽能電池工作原理 ………………………………………..……………….10
2.1.1 半導體材料的光吸收 …………………………………………………..10
2.1.2 P-N 接面 ……………..............12
2.1.3 太陽能電池等效電路 ……………………………………………………..15
2.1.4太陽光譜與入射強度定義 ………………………………………………...20
2.1.5 三接面(InGaP/InGaAs/Ge)太陽能電池設計 .…………………………….24
2.1.6 抗反射層原理 ….………………………………………………………….29
2.1.7 傳輸線模型原理 …………………………………………………………..32
第三章 實驗方法與參數 …………………………………………………………..34
3.1 元件製作流程 ……………..………………………………………………….34
3.2量測設備介紹 ………….……….……………………………………………..39
第四章 實驗結果與討論 …………………………………………………………..42
4.1退火材料特性分析……………………………………………………………..42
4.2 熱對太陽能電池影響研究…………………………………………………….47
4.3熱對太陽能電池的效率影響探討……………………………………………..53
4.4 聚光模組以及回收反射光的探討…………………………………………….56
第五章 結論 ………………………………………………………………………..59
參考文獻 ……………………………………………………………………………61

表目錄
表 2.1不同空氣質量的單位面積入射功率表……..…………………………….24
表 4.1原始聚光模組與回收反射光數據比較 ………………………………….57

圖目錄
圖1.1 地球能源消耗示意圖(BP2011) .……..……………………...……..…………2
圖1.2 太陽能電池種類示意圖 .……………………………………..……………...4
圖1.3 太陽能電池電池種類及光電轉換效率圖 .……………..……..……..……...4
圖1.4 染敏太陽能電池工作原理 .………………………………....……………….6
圖1.5 CIGS太陽能電池工作原理 ..……………………………….….……………7
圖1.6 不同能隙材料吸收光頻圖 .………………………………..………………...8
圖1.7 聚光模組示圖 .………………………………………………..…..………….9
圖2.1 (a)本質轉換與(b)外質轉圖 .……………………………….………….……..10
圖2.2 直接能隙與間接能隙的E-k圖…………………………..……….…….…….12
圖2.3 太陽能電池工作原理圖…………………………..………………….………13
圖2.4 未照光太陽能電池特性曲線圖…………………………..………….………15
圖2.5 照光後太陽能電池特性曲線圖……………………...……..……….……….16
圖2.6 非理想太陽能電池等效電路圖…………………………..…….……………17
圖2.7 太陽能電池 特性曲線圖…………………………..……….…………...18
圖2.8 空氣質量定義示意圖…………………………..….………………...……….22
圖2.9 太陽光頻譜………………………..…………………….……………………22
圖2.10 ASTM G173-03太陽光頻譜………………………………………………….23
圖2.11 基本太陽能電池結構圖…………………………………………………….25
圖2.12 穿隧接面連接上下子電池能帶示意圖…………………………………….29
圖2.13 抗反射層示意圖…………………………………………………………….32
圖2.14 金屬電極配置圖…………………………………………………………….33
圖2.15 電阻與間距 (R-L) 的關係圖………………………………………………33
圖3.1 三接面(InGaP/InGaAs/Ge)太陽能電池結構 ………...……………………...34
圖3.2 元件完整結構圖……………………………………………………………..39
圖3.3 太陽能光源模擬器架構圖…………………………………………………..40
圖3.4 表面輪廓儀架構圖…………………………………………………………..41
圖4.1 阻值與距離之線性曲線……………………………………………………..42
圖4.2 不同溫度退火阻值圖………………………………………………………..45
圖4.3 不同溫度下正面電極變化圖………………………………………………..45
圖4.4 (InGaP)升溫對於Voc影響曲線………………………………………………48
圖4.5 (InGaP)升溫對於Jsc影響曲線………………………………………………..48
圖4.6 (InGaP)升溫對於Eff影響曲線 ..…………………………………………...49
圖4.7 (InGaAs)升溫對於Voc影響曲線 ……………………….……………….…49
圖4.8 (InGaAs)升溫對於Jsc影響曲線…………………………….………………50
圖4.9 (InGaAs)升溫對於Eff影響曲線 ………………….….….………………51
圖 4.10 (InGaP/InGaAs/Ge)升溫對於Voc影響曲線 ...……………………………51
圖4.11 (InGaP/InGaAs/Ge)升溫對於Jsc影響曲線 ..….…….……………..……52
圖4.12 (InGaP/InGaAs/Ge)升溫對於Eff影響曲線 ..…....….…..……….………52
圖4.13 Voc值隨著二極體溫度效應下降 ..….…………………….…………..…53
圖4.14升溫對於FF影響曲線以及IV特性曲線 ..….………………….………55
圖4.15 (A)原始聚光模組示意圖 ..…….…………………………………………56
圖4.15 (B)附加電池來回收反射光的聚光模組示意圖.…….……………………56
圖4.16 未加聚光杯下時間與溫度關係圖 ..…….…………………………….…58
圖4.17有聚光杯下時間與溫度關係圖 ...….……………………………….……58

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