跳到主要內容

臺灣博碩士論文加值系統

(3.235.120.150) 您好!臺灣時間:2021/07/31 12:55
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

: 
twitterline
研究生:廖潔瑩
研究生(外文):Chieh-Ying Liao
論文名稱:表面處理對氧化鋅歐姆接觸之影響
論文名稱(外文):The Effects of Surface Treatment on ZnO Ohmic Contact
指導教授:蔡有仁王納富
指導教授(外文):Yu-Zen TsaiNa-Fu Wang
口試委員:洪茂峰陳巽欽吳忠義王納富蔡有仁
口試委員(外文):Mau-Phon HoungHsun-Chin ChenChung-Yi WuNa-Fu WangYu-Zen Tsai
口試日期:2012-07-19
學位類別:碩士
校院名稱:正修科技大學
系所名稱:電子工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:80
中文關鍵詞:氧化鋅環形傳輸線模型電漿表面處理
外文關鍵詞:ZnOCTLMplasma treatment
相關次數:
  • 被引用被引用:0
  • 點閱點閱:107
  • 評分評分:
  • 下載下載:11
  • 收藏至我的研究室書目清單書目收藏:0
本論文,研究利用磁控濺鍍法沉積氧化鋅薄膜,再經由反應式離子蝕刻( Reactive Ion Etcher System,RIE )對氧化鋅薄膜表面做氬氣、氮氣以及氧氣電漿處理以及快速熱退火(Rapid thermal annealing,RTA)改善其導電性,並利用環形傳輸線(circular transmission line model,CTLM)方法探討金屬鎳(Ni)與氧化鋅薄膜(Ni/ZnO)之歐姆接觸特性。
在氧化鋅薄膜在初鍍膜時,Ni/ZnO電流電壓量測結果呈現無線性,並不是歐姆特性。再氧化鋅薄膜利用真空環境500OC 10min 退火,Ni/ZnO電流電壓量測結果呈線性其關係為歐姆特性,其特徵接觸電阻為8.45 10-03Ωcm2。在氮氣電漿處理中,特徵接觸電阻值ρc在電漿功率50w時有最低值為6.24 10-6Ωcm2,隨著電漿功率增強到200w時,特徵接觸電阻值ρ也隨著提高到1.74 10-4Ωcm2。在氬氣電漿處理中,當功率50w時我們所求得的特徵接觸電阻值ρc為5.69 10-5Ωcm2,隨著電漿功率越高特徵接觸電阻值ρc隨著下降,當電漿功率200w時有最低特徵接觸電阻值ρc為 9.02 10-6Ωcm2。在氧氣電漿處理中,所有試片都無呈現歐姆特性,當功率50w時,特徵接觸電阻值為8181.63Ωcm2,隨著電漿功率越高,特徵接觸電阻值隨著下降,當功率達到200w時特徵接觸電阻值為0.66Ωcm2。
以上述結果來看,以本研究利用磁控濺鍍法製備氧化鋅薄膜後,利用不同的表面處理提高薄膜的缺陷濃度,以結果來看氬氣電漿的的特徵接觸電阻會隨著電漿的功率變大而降低,在特徵接觸電阻值上較為穩定,所以本實驗中為氬氣電漿退火,為最好的變化參數條件。
The n-type ZnO film in this study was grown on SiO2/Si substrates by radio frequency magnetron sputtering. Rapid thermal annealed and plasma surface treatment were used to improve electric conductivity of ZnO films. The ohmic contacts of metal Ni deposited on processed ZnO were studied by circular transmission-line-method (CTLM) measurements.
The I-V curve of Ni metal on as-deposited ZnO thin films was not linear. However, Ni metal on the ZnO thin films annealed at 500OC for 10min in vacuum ambition shows good ohmic contact with a specific contact resistance of 8.45 10-3 Ωcm2. By N2 plasma treatment of the power 50W that was got a specific contact resistance of 1.23 10-5 Ωcm2. When the power addition to 200W that showing a specific contact resistance of 1.07 10-4 Ωcm2. When the the power decrease from 50W to 200W at Ar plasma treatment, it has got the specific contact resistance reduced from 8.62 10-5 Ωcm2 to 6.84 10-6 Ωcm2. The result show a not good ohmic contact when the ZnO thin films using O2 plasma treatment. In all conditions, as the Ar plasma had good ohmic contact conditions, because the plasma power was be increased, that can be reduced the specific contact resistance.
摘要…………………………………………………………………… I
Abstract…………………………………………………… III
誌謝……………………………………………………… V
本文目錄………………………………………………… VI
表目錄………………………………………………… VIII
圖目錄…………………………………………………… IX

第一章前言……………………………………………… 1
1-1研究背景…………………………………………… 1
1-2研究動機…………………………………………… 3
1-3文獻回顧…………………………………………… 4
1-4研究目的…………………………………………… 5
第二章理論基礎………………………………………… 7
2-1金屬-半導體接觸理論…………………………… 7
2-2歐姆接觸理論……………………………………… 12
2-3特徵接觸電組……………………………………… 14
2-4環形傳輸線模型理論……………………………… 16
2-5環形傳輸線模型理論(Circular
Transmission Line Model;CTLM) 18
第三章實驗方法………………………………………… 21
3-1實驗步驟…………………………………………… 21
3-1-1基板清洗步驟……………………………… 22
3-1-2 ZnO薄膜成長………………………………… 23
3-1-3氧化鋅(ZnO)薄膜表面處理…………………27
3-1-4氧化鋅(ZnO)薄膜退火處理…………………29
3-1-5黃光微影製程………………………………… 30
3-1-6金屬蒸鍍……………………………………… 33
3-1-7金屬舉離……………………………………… 34
3-2實驗分析…………………………………………… 36
3-2-1霍爾效應量測…………………………………. 36
3-2-2高解析場發射掃描式電子顯微鏡(UHRFE-SEM) 40
3-2-3 半導體參數分析儀…………………………… 41
第四章結果與討論……………………………………… 42
4-1真空退火對氧化鋅初鍍膜的比較探討………43
4-2氮氣電漿處理對氧化鋅薄膜的探討……………48
4-3氬氣電漿處理對氧化鋅薄膜的探討……………58
4-4氧氣電漿處理對氧化鋅薄膜的探討……………68
第五章結論……………………………………………… 74
參考文獻………………………………………………… 76

[1] M. Zamfirescu, A. Kavokin, B. Gil, G. Malpuech, and M. Kaliteevski, “ZnO as a material mostly adapted for the realization of room-temperature polariton lasers,” Physical Review B, vol. 65, pp. 161205(R), 2002
[2] H.L.Hartnagel,A.K.Jainand C.Jagadish, “Semiconducting transparent thin films,” Published by Institute of Physics Publication, pp.17,1995.

[3] W. Water and S. Y. Chu, “Physical and structural properties of ZnO sputtered films,” Mater. Lett., vol. 55, pp. 67-72, 2002.

[4] S. Y. Chu, W. Water and J. T. Liaw, “Influence of postdeposition annealing on the properties of ZnO films prepared by RF magnetron sputtering,” J. Eur. Cera. Soc., vol.23, pp. 1593-1598, 2003.

[5] 水瑞鐏, ”氧化鋅薄膜特性及其在通訊元件與液體感測器上之應用”, 國立成功大學電機工程學系博士論文, 2002

[6] D. G. Baik and S. M. Cho, “Application of sol-gel films forZnO/n-Si junction solar cells,” Thin Solid films, vol. 354, pp. 227-231, 1999.

[7] P. Nunes, D. Costa, E. Fortunato and R. Martins, “Performances presented by zinc oxide thin films depositedby D.C. magnetron sputtering,” Vacuum, vol. 64, pp. 293-297,2002.

[8] L. Yi, Y. Hou, H. Zhao, D. He, Z. Xu, Y. Wang and X. Xu, “The photo- and electro -luminescence properties of ZnO:Zn thin film,” Displays, vol. 21, pp. 147-149, 2000.

[9]Y. H. Lee, M. H. Song and B. K. Ju, “Thin film phosphor prepared by physical vapor deposition for field emission display application,” J. Vac. Sci. Technol. B, vol. 15(2), pp.512-515, 1997.

[10]S. Tuzemen, G. Xiong, J. Wilkinson, B. Mischuck, K. B. Ucer and R. T. Williams, “Production and properties of p-n junctions in reactively sputtered ZnO,” Physica B, vol.308-310, pp. 1197-1200, 2001.

[11] S. Y. Chu, W. Water and J. T. Liaw, “Influence of postdeposition annealing on the properties of ZnO films prepared by RF magnetron sputtering,” J. Eur. Cera. Soc., vol. 23, pp. 1593-1598, 2003.

[12] P. Nunes, D. Costa, E. Fortunato and R. Martins,“Performances presented by zinc oxide thin films deposited by r.f. magnetron sputtering,” Vacuum, vol. 64, pp. 293-297, 2002.

[13] Y. Igasaki and H. Saito, “The effects of Zinc diffusionon the electrical and optical properties of ZnO:Al films prepared by RF reactive sputtering,” Thin Solid Films, vol. 199, pp.223-230, 1991.

[14] M.T. Young and S.D. Keun, “Effects of rapid thermal annealing on the morphology and electrical properties of ZnO/In Films,” Thin Solid Films, vol. 410, pp. 8-13, 2002.

[15]王敬龍, “以溶膠-凝膠法製備ITO 薄膜之製程研究”, 國立成功大學材料科學及工程研究所碩士論文, 1996

[16] 許國銓, “科技玻璃-高性能透明導電膜玻璃”, 材料與社會, 1993, 84 期。

[17] J. Wang, G. Du, Y. Zhang, B. Zhao, X. Yang and D.Liu, “Luminescence properties of ZnO films annealed in growth ambient and oxygen,” J. Crystal Growth, vol. 263, pp.269-272, 2004.

[18] C. Shi, Z. Fu, C. Guo, X. Ye, Y. Wei, J. Deng, J. Deng, J. Shi and G. Zhang, “UV luminescence and spectral properties of ZnO films deposited on Si substrates,” J. Electron Spectrosc. Relat. Phenom., vol. 101-103, pp. 629-632, 1999.

[19] C. C. Lin, C. S. Hsiao, S. Y. Chen and S. Y. Cheng, “Ultraviolet emission in ZnO films controlled by point defects,” J. Electrochem. Soc., vol. 151(5), pp. G282-G288,2004.

[20] Z. Fang, Y. Wang, X. Peng, X. Liu and C. Zhen, “Structural and optical properties of ZnO films grown on the AAO templates,” Mater. Lett., vol. 57, pp. 4187-4190, 2003.

[21] 陳彥宏, ”ZnO之薄膜製備與發光性質研究”, 國立清華大學材料科學工程學系碩士論文, 2001。

[22] H. K. Kim, T. Y. Seong, K. K. Kim, S. J. Park, Y. S. Yoon and I. Adesida, “Mechanism of Nonalloyed Al Ohmic Contacts to n-Type ZnO:Al Epitaxial Layer,” Japanese Journal of Applied Physics, Vol. 43, No. 3, pp. 976-979, 2004

[23] J.H. Kim, J. Y. Moon, H. S. Lee, W. S. Han, H. K. Cho, J. Y. Lee and H.S. Kim, “Al/Au ohmic contact to n-ZnO by dc sputtering,” Materials Science and Engineering B vol. 165, pp.77–79, 2009

[24]H. Sheng, N. W. Emanetoglu, S. Muthukumar, B. V. Yakshinskiy, S. Feng, and Y. Lu, “ Ta/Au Ohmic Contacts to n-Type ZnO,” Journal of Electronic Materials, Vol. 32, No. 9, 2003

[25]S. H. Kim, K. K. Kim, S. J. Park and T. Y. Seong, “Thermally Stable and Low Resistance Re/Ti/Au Ohmic Contacts to n-ZnO, ” Journal of The Electrochemical Society, vol. 153 (3) , pp. G169-G172, 2005

[26] K. P. Hsueh,” Elucidating surface properties of dry-etched ZnO usingH2/CH4 and H2/CH4/Ar plasma, ” Applied Surface Science, vol. 257, pp. 969-973, 2010

[27] H. K. Kim, J. W. Bae, K. K. Kim, S. J. Park, T. Y. Seong and I. Adesida, “Inductively-coupled-plasma reactive ion etching of ZnO using BCl3-based plasmas and effect of the plasma treatment on Ti/Au ohmic contacts to ZnO,” Thin Solid Films, 447 -448, pp. 90-94, 2004

[28] X. A. Cao, H. Piao, and S. F. LeBoeuf,” Effects of plasma treatment on the Ohmic characteristics of Ti/Al/Ti/Au contacts to n-AlGaN,” Applied Physics Letters, vol. 89, pp. 082109, 2006

[29] F. H. Wang , H. P. Chang, C. C. Tseng, C. C. Huang, “Effects of H2 plasma treatment on properties of ZnO:Al thin films prepared by RF magnetron sputtering,” Surface & Coatings Technology, vol. 205, pp. 5269-5277, 2011

[30] Y. Tang, D. You, J. Xu, X. Li, X. Li and H. Gong, “Reduction of ohmic contact resistivity on p-GaN using N2 plasma surface treatment at room temperature,” Semicond. Sci. Technol. , vol. 21, pp. 1597-1599, 2006

[31]E. H. Rhodetick and R. H. Willian, Metal-Semiconductor Contact, 2nd ed (Oxford Science Publiscations, 1988).

[32]Donald A. Neamen, Semiconductor Physics and Devices, 3rd ed (McGraw-Hill, New York, 2003).

[33]M. Sze, Physics of Semiconductor Devices, 2nd ed, (John Wiley & Sons, New York, 1981).

[34]F.Braun, “On the Conduction Through Sulfurmetals”, (inGerman),Annal. Phys. Chem. vol. 153, pp. 556-563, 1874

[35] W. Schottky, “Semiconductor Theory of the Blocking Layer” ( in German ), Naturwissenschaften 26, 843, Dec. 1938; “On the Semiconductor Theory of Blocking and Point Contact Rectifiers”(in German), Z. Phy. 113, 367-414, July 1939; “Simplified and Expanded Theory of Boundary Layer Rectifiers” (in German), Z. Phys. 118, 539-592, Feb. 1942

[36] J. d H.X.Jiang, et al., Appl.Phys.Lett.69 (10), 2 September 1996, 1474.

[37]Dieter K. Schroder, Semiconductor Material and Device Characterization, 2nd ed (Wiley, New York, 1998)

[38] S. M. Sze, Physics of Semiconductor Devices, 2nd ed, (John Wiley & Sons, New York, 1981).

[39] Dieter K. Schroder, Semiconductor Material and Device Characterization, 2nd ed (Wiley, New York, 1998)

[40]林素霞, “氧化鋅薄膜的特性改良及應用之研究”, 國立成功大學 材料科學及工程研究所 博士論文,2003

[41] I. Nagatomo,R. Uchino,Y. Li,M. Shuzo,I. Yamada and J. J. Delaunay, “Enhancement of Gas Response of ZnO Micro-Nano Structured Films through O2 Plasma Treatmen,”IEEJSMAS, Vol. 129, No. 9, pp. 307-311, 2009

[42] H.-K. Kim, S.-H. Han, W. K. Choi, and T.-Y. Seong, “Low-resistance TiÕAuohmic contacts to Al-doped ZnO layers,” J. Electrochem. Soc., 148, pp. G114-G116, 2001

[43] 劉芳佐,“以水熱法製備之氧化鋅奈米桿之氣體感測特性” ,國立台灣科技大學 化學工程系 碩士學位論文, 2009

[44] H.-K. Kim, K.-K. Kim, S.-J. Park, T.-Y. Seong, and Y. S. Yoon, “Thermally Stable and Low Resistance Ru Ohmic Contacts to n-ZnO,” Japanese Journal of Applied Physics, 41, pp. L546-L548, 2002

[45] J. S. Wright, R. Khanna, D. P. Norton, S. J. Pearton, F. Ren, and I. I. Kravchenkoc, “Thermally Stable TiB2 Ohmic Contacts on n-ZnO,”
Electrochem. Solid-State Lett., Volume 9, Issue 5, pp. G164-G166, 2006

[46] S. H. Kim, K. K. Kim, S. J. Park, and T. Y. Seong, “Thermally Stable and Low Resistance Re/Ti/Au Ohmic Contacts to n-ZnO,” J. Electrochem. Soc., Volume 152, Issue 3, pp. G169-G172, 2005

[47] J.-J. Chen, S. Jang, F. Ren, S. Rawal, Y. Li, H.-S. Kim, D.P. Norton, S.J. Pearton and A. Osinsky, “Thermal stability of Ti/Al/Pt/Au and Ti/Au Ohmic contacts on n-type ZnCdO,” Applied Surface Science, Vol. 253, pp. 746-752, 2006

QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top