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研究生:蔡閎聿
論文名稱:氧化鋅/單晶矽異質接面二極體之研究
論文名稱(外文):A Study of ZnO/Si heterojunction diodes
指導教授:黃勝斌
學位類別:碩士
校院名稱:建國科技大學
系所名稱:電機工程系暨研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:64
中文關鍵詞:射頻磁控濺鍍異質接面
外文關鍵詞:RF Magnetron SputterHetero-junctions
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本研究以射頻磁控濺鍍法在p型(100)矽基板上沉積不同鋁摻雜的氧化鋅鋁(ZnO:Al, AZO)薄膜來製作ZnO:Al/p-Si的異質接面。由於氧化鋅在未摻雜其電阻值偏高,所以藉由摻雜鋁及改變射頻功率、直流偏壓等條件來分析薄膜成長結構與光電特性之影響。分別以X-射線繞射儀(XRD)分析晶體結構 、掃描式電子顯微鏡(SEM)觀察表面型態及霍爾效應測量電阻值及遷移率來觀察薄膜的成長結構與光電特性。實驗結果顯示成長AZO薄膜具有c軸優先結晶方向(002) 。異質接面的電壓-電流量測顯示,此接面具有整流二極體特性。
In this study, Aluminum-Doped zinc Oxide(ZnO:Al)thin film is deposited on P-type Silicon substrate by RF Sputtering method, then to use Aluminum-Doped Zinc Oxide(ZnO:Al)thin film which contain different degree of Aluminum to produce ZnO:Al ; and p-Si hetero-junction. When Zinc oxide any Aluminum, the value of the resistance which is higher than the average level. Upon this character, the study discusses about the effect on thin film growing structerand Optical and Electrical Properties through change different terms, such as the Aluminum quantities and the level of RF, DC bias, and so on. Beside, observing the growing structure and Optical and Electrical Properties of the thin film, through analyze the crystal structure by XRD, observe the surface morphology by SEM and measure the value of the resistance and electron mobility by Hall effects. The result of this experiment prove the growing AZO thin film has the priority crystal orientation(002)on c axis and the value of voltage-current on Hetero-junction reveal the junction has the character of rectifier diode.
目錄
致謝 I
摘要 II
Abstract III
目錄 IV
表目錄 VII
圖目錄 VIII
第一章 序論 1
1-1前言 1
1-2透明導電膜 1
1-3論文架構 2
第二章 文獻回顧 3
2-1 氧化鋅特性與應用 3
2-1-1 氧化鋅特性 3
2-1-2 氧化新光學性質 6
2-1-3 氧化鋅導電性質 7
2-1-4 氧化鋅發光機制 8
2-1-5 氧化鋅薄膜應用 10
2-2 電漿原理 11
2-2-1 電漿中的碰撞 12
2-3射頻磁控濺鍍 17
2-4薄膜成核成長理論 20
2-5 PN二極體基本原理 22
第三章 實驗方法與步驟 26
3-1實驗流程圖 26
3-2實驗設備 27
3-2-1 射頻磁控濺鍍系統 27
3-2-2 金屬蒸著機 29
3-3 實驗方法 30
3-3-1 試片清洗 30
3-3-2 參數設定與沉積薄膜 31
3-3-3 元件電極製作 31
3-4 測量儀器 32
3-4-1掃描式電子顯微鏡(SEM) 32
3-4-2 X光繞射儀(XRD) 33
3-4-3霍爾量測(Hall Measurement System) 36
第四章 實驗結果與討論 37
4-1 濺鍍功率對薄膜結構及性質之影響 37
4-1-1 薄膜沉積速率之分析 37
4-1-2 薄膜表面結構之分析 38
4-1-3 電性分析與光穿透率 42
4-2基板偏壓對薄膜性質之影響 45
4-2-1 薄膜沉積速率之分析 45
4-2-2 薄膜表面結構之分析 46
4-2-3 電性分析與光穿透率 50
4-3 不同射頻功率對二極體電流-電壓曲線特性之影響 53
4-4 不同基板偏壓對二極體電流-電壓曲線特性之影響 55
第五章 結論 59
參考文獻 60
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