跳到主要內容

臺灣博碩士論文加值系統

(98.82.140.17) 您好!臺灣時間:2024/09/08 01:50
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

我願授權國圖
: 
twitterline
研究生:褚瑞鵬
研究生(外文):Jui-Peng Chu
論文名稱:低壓氮/氫退火的溫度與壓力對氧化鋅共摻雜鎵鋁薄膜的光/電/微結構特性影響
論文名稱(外文):Dependence of Annealing Temperature and Annealing Pressure in Low Pressure Hydrogen / Nitrogen Annealing on Electrical,Optical and Microstructure Properties of Gallium and Aluminum co-doped Zinc Oxide Films
指導教授:張慎周
指導教授(外文):Shang-Chou Chang
學位類別:碩士
校院名稱:崑山科技大學
系所名稱:電機工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:83
中文關鍵詞:氧化鋅氧化鋅摻雜鎵鋁退火氮氫退火熱處理溫度後處理光電性質微結構
外文關鍵詞:ZnOAZOGZOannealingTemperatureHydrogen AnnealingNitrogen AnnealingAnnealing PressureAnnealing Temperature
相關次數:
  • 被引用被引用:2
  • 點閱點閱:406
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
本研究以直線式連續濺鍍氧化鋅共摻雜鎵鋁(GAZO)薄膜,探討GAZO薄膜經氫/氮退火與純氫退火是否可以改善其薄膜的微結構與光電特性。
  經由實驗結果得知,基板未加熱的GAZO薄膜在氣體壓力為35torr及不同氣體環境中退火450℃一小時,薄膜皆呈現(002)優選取向。經純氫退火後,獲得電阻率為5.4×10-4Ω-cm,光穿透率為89%,電阻率比未處理的GAZO薄膜下降60%,光穿透率增加17%。而將氮加入後使用氫/氮退火處理,獲得最低電阻率為5.2×10-4Ω-cm,光穿透率為91%,電阻率比未處理的GAZO薄膜下降62%,光穿透率增加19%。得知氫/氮退火比純氫退火的光電性質獲得較多改善。經由改變氫/氮退火時的氣體壓力來探討對光電性質的影響,隨壓力改變從25~35torr,電阻率從5.3×10-4Ω-cm降低為 5.2×10-4Ω-cm,僅下降0.02%,光穿透率皆為91%。得知改變溫度較改變壓力更加有效。


This work descirbes the electrical and optical properties of gallium and aluminum doped zinc oxide (GAZO) films with unheated substrate during sputtering can be improved by low pressure hydrogen/nitrogen or pure hydrogen annealing or not. The results indicate both low pressure hydrogen/nitrogen and pure hydrogen annealing can improve the electrical and optical properties of GAZO films. The hydrogen/nitrogen annealing can improve more than pure hydrogen annealing. The GAZO films post treated with 35 torr, 450oC, 1 hour annealing can have 5.2×10-4Ω-cm of electrical resistivity and 91% of average optical transmittance in hydrogen/nitrogen atmosphere, 5.4×10-4Ω-cm of electrical resistivity and 89% of average optical transmittance in pure hydrogen atmosphere. The annealing pressure in 25~35 torr is not sensitive to the electrical and optical properties of GAZO films.

總目錄
頁數
中文摘要 I
英文摘要 III
致謝 V
總目錄 VII
圖目錄 XI
表目錄 XIV

第一章緒論 1
1.1前言 1
1.1研究動機 6
1.2相關文獻回顧 8
第二章理論基礎 12
2.1透明導電膜介紹 12
2.1.1透明導電膜歷史 12
2.1.2透明導電膜之光性質 13
2.1.3透明導電膜之電性質 14
2.2氧化鋅材料特性介紹 16
2.3濺鍍原理 17
2.4薄膜成長 18
2.5薄膜表面型態結構 21
2.6柏斯坦-摩斯(Burstein-Moss)效應 22

第三章實驗方法與步驟 24
3.1實驗流程 24
3.2實驗材料 26
3.3濺鍍基板清洗 26
3.4濺鍍GAZO薄膜 27
3.4.1真空濺鍍系統 27
3.4.2連續式濺鍍 29
3.5後製程系統與參數說明 31
3.5.1退火腔體 31
3.5.2真空退火 32
3.6 薄膜特性分析 33
3.6.1 X-ray 繞射分析 33
3.6.2掃描式電子顯微鏡分析 34
3.6.3霍爾電性分析 35
3.6.4光譜分析 36
第四章結果與討論 37
4.1氫氮退火後處理(改變溫度,固定壓力退火時間一小時) 37
4.1.1薄膜結晶性 37
4.1.2薄膜表面形貌 39
4.1.3薄膜電性質 41
4.1.4薄膜光學性質 44
4.1.5光電性質綜合比較 47
4.1.6討論 48
4.2純氫退火後處理(改變溫度,固定壓力退火時間一小時) 52
4.2.1薄膜結晶性 52
4.2.2薄膜表面形貌 54
4.2.3薄膜電性質 56
4.2.4薄膜光學性質 58
4.2.5光電性質綜合比較 61
4.2.6討論 62
4.3氫氮退火後處理(改變壓力,固定溫度退火時間一小時) 65
4.3.1薄膜結晶性 65
4.3.2薄膜表面形貌 67
4.3.3薄膜電性質 69
4.3.4薄膜光學性質 71
4.3.5光電性質綜合比較 74
4.3.6討論 75

第五章結論 78
參考文獻 81


參考文獻
[1] H.W. Kim, N.H. Kim, “Structural studies of room-temperature RF magnetron sputteredZnO films under different RF powered conditions” ,Materials Science and Engineering B103 (2003) 297–302.
[2] W. Dewald, “Optimization of process parameters for sputtering of ceramic ZnO:Al2O3 targets fora-Si:H/μc-Si:H solar cells”, Thin Solid Films 518 (2009) 1085–1090.
[3] J.-H. Bang , “Effects of additive gases and plasma post-treatment on electrical propertiesand optical transmittance of ZnO thin films”, Thin Solid Films 519 (2010) 1568–1572.
[4] J.-H. Bae, H.-K. Kim, “Characteristics of Al doped ZnO co-sputtered InZnO anode films prepared bydirect current magnetron sputtering for organic light-emitting diodes”, Thin Solid Films 516 (2008) 7866–7870.
[5] X. Jiang, F. L. Wong, M. K. Fung, and S.T. Lee, “Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices”,Appl.Phys.Lett. 83(2003)1875.
[6] G. J. Exarhos, S. K. Sharmu, “Influence of processing variables on the structure and properties of ZnO films”, Thin Solid Films 270 (1995) 27-32.
[7] Meng-Chi Li, Chien-Cheng Kuo, Sheng-Hui Chen, and Cheng-Chung Lee“Optical and electric properties of aluminum-gallium doped zinc oxide for transparent conducting film” ,Thin Film Solar Technology, edited by Alan E. Delahoy, Louay A. Eldada, Proc. of SPIE Vol. 7409.
[8] Jungwoo Kang , “Electrical Resistivity and Transmittance Properties of Al- and Ga-codoped ZnO Thin Films”,Electrical Resistivity and Transmittance Properties of Al- and Ga-codoped ZnO Thin Films.
[9] Kyoo-Ho Kim and Eric Arifin, “The Effect of Gallium Concentration and Substrate Temperature on the Properties of Ga-Doped ZnO Thin Films Sputtered from Powder Compacted Target”, Metals Andmaterials International, Vol. 13, No. 6 (2007), pp. 489~494
[10] W. Li , “Effects of substrate temperature on the properties of facing-target sputtered Al-doped ZnO films” ,Solar Energy Materials & Solar Cells 91 (2007) 659–663.
[11] M. Chen , “X-ray photoelectron spectroscopy and auger electron spectroscopy studies of Al-doped ZnO films”,rApplied Surface Science 158 (2000) 134–140.
[12] J.F. Chang , “Studying of transparent conductive ZnO : Al thin flms by RF reactive magnetron sputtering”, Journal of Crystal Growth 211 (2000) 93-97.
[13] Y.M. Hu , “Dependences of the Al thickness and annealing temperature on the structural,optical and electrical properties in ZnO/Al multilayers” ,Thin Solid Films 497 (2006) 130– 134.
[14] Q.-B. Ma ,“Influence of annealing temperature on the properties of transparent conductive and near-infrared reflective ZnO:Ga films” ,Scripta Materialia 58 (2008) 21–24.
[15] Chris G. Van de Walle.“Hydrogen as a Cause of Doping in Zinc Oxide” Volume 85, Number 5 Physical Review Letters 31 July 2000
[16]張存續,“材料與微波之頻率響應與反應特性”,工業材料雜誌,第216期(2004) 81-87.
[17] F.-H. Wang , “Influence of hydrogen plasma treatment on Al-doped ZnO thin films for amorphous silicon thin film solar cells” ,Current Applied Physics xxx (2010) 1e5.
[18] Tadatsugu Minami, “Transparent conducting oxide semiconductors for transparent electrodes”, Semicond. Sci. Technol. 20 (2005) S35–S44.
[19] B. Szyszka, “Development of new transparent conductors and device applications utilizing a multidisciplinary approach” Thin Solid Films 518 (2010) 3109–3114.
[20] P. Nunes, “Performances presented by zinc oxide thin films deposited by r.f. magnetron sputtering” ,Vacuum 64 (2002) 293–297.
[21] T.Y. Ma, “Effects of rapid thermal annealing on the morphology and electrical properties of ZnOyIn films”, Thin Solid Films 410 (2002) 8–13.
[22] S. Mandal , “Optical and structural characteristics of ZnO thin films grown by rf magnetron sputtering”, Materials Research Bulletin 43 (2008) 244–250.
[23] Sookjoo Kim, “Influence of substrate temperature and oxygen/argon flow ratioon the electrical and optical properties of Ga-doped ZnO thin films prepared by rf magnetron sputtering” ,Cryst. Res. Technol. 41, No. 12, 1194 – 1197 (2006) / DOI 10.1002/crat.200610748.
[24] Sookjoo Kim, “Dependence of the resistivity and the transmittance of sputterdeposited Ga-doped ZnO films on oxygen partial pressure and sputtering temperature” ,J Mater Sci (2007) 42:4845–4849 DOI 10.1007/s10853-006-0738-8.
[25] Jungwoo Kang , “Electrical Resistivity and Transmittance Properties of Al- and Ga-codoped ZnO Thin Films”, Electrical Resistivity and Transmittance Properties of Al- and Ga-codoped ZnO Thin Films.
[41] Chun-Ku Chen,“Modelling the discharge region of a microwave generated hydrogen plasma”, J. Phys. D: Appl. Phys. 32 (1999) 688–698. Printed in the UK PII: S0022-3727(99)97726-4.
[26] 傅守璽,“低壓氫退火改善直線式連續濺鍍氧化鋅共摻雜鎵鋁薄膜特性”,崑山科技大學電機工程系碩士論文,(2010)。
[27]吳光榮,“直線式連續濺鍍製作氧化鋅共摻雜鎵鋁薄膜”,崑山科技大學電機工程系碩士論文,(2010)。
[28] Meng-Chi Li, Chien-Cheng Kuo, Sheng-Hui Chen, and Cheng-Chung Lee. “Optical and electric properties of aluminum-gallium doped zinc oxide for transparent conducting film”, Downloaded from SPIE Digital Library on 21 Jul 2010 to 140.116.210.6.
[29] Jungwoo Kang , “Electrical Resistivity and Transmittance Properties of Al- and Ga-codoped ZnO Thin Films” ,Journal of the Korean Physical Society, Vol. 56, No. 2, Fabruary 2010, pp. 576-579.
[30] M. Chen, “X-ray photoelectron spectroscopy and auger electron spectroscopy studies of Al-doped ZnO films”rApplied Surface Science 158 (2000) 134–140.
[31]楊明輝, “透明導電膜”, 藝軒圖書出版社, (2006)。
[32] F.-H. Wang, “Influence of hydrogen plasma treatment on Al-doped ZnO thin films for amorphous silicon thin film solar cells”, Current Applied Physics (2010).
[33] H.P. Chang , “Enhanced conductivity of aluminum doped ZnO films by hydrogen plasma treatment” ,Thin Solid Films 518 (2010) 7445–7449.
[34]李鎮緯,“低壓退火改善連續式直流濺鍍AZO薄膜特性”,崑山科技大學電機工程系碩士論文,(2008)
[35]陳柏佑,“低壓氫退火改善直流濺鍍氧化鋅摻雜鋁箔膜特性”,崑山科技大學電機工程系碩士論文,(2009)
[36]邱瀧慶,“低壓退火改善直線式連續濺鍍製作氧化鋅共摻雜鎵鋁薄膜光電特性”,崑山科技大學電機工程系碩士論文,(2010)
[37]胡志強,“使用後處理改善直線式連續濺鍍氧化鋅共摻雜鎵鋁薄膜光電特性”,崑山科技大學電機工程系碩士論文,(2011)
[38]白木 靖寬,吉田 貞史, “薄膜工程學” 全華科技圖書股份有限公司,(2004)
[39]吳振銘,“低加熱速率退火改善直線式連續濺鍍氧化鋅共摻雜鎵鋁薄膜光電特性”,崑山科技大學電機工程系碩士論文,(2010)
[40] Shang-Chou Chang, “Low-pressure H2/N2 annealing on indium tin oxide film”, Microelectronics Journal ,38 (2007) 1220–1225.

QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top