臺灣博碩士論文加值系統

本實驗製備GAZO薄膜基板溫度為室溫進行微波氫/氮電漿退火與微波氫電漿退火後處理，改變微波電漿功率為200 W、400 W、600 W，氣體壓力分別為10 Torr、15 Torr、20 Torr、25 Torr，處理時間固定為10 min。後續由X-ray繞射觀察薄膜晶格結構，掃描式電子顯微鏡(SEM)、觀察薄膜表面微結構，霍爾量測其電性，光譜儀量測光穿透率，光致螢光光譜和拉曼光譜，探討微波氫/氮電漿退火與微波氫電漿退火的機制是否相同，或能得到其薄膜更好的微結構與光電特性。
實驗結果發現微波氫/氮電漿退火電漿功率為400 W、氣體壓力為20 Torr時，獲得最低電阻率為7.17×10-4 Ω-cm，且退火前後電阻率下降48%。藉由光譜儀量測穿透率，在微波氫/氮電漿退火電漿功率為400 W、壓力25 Torr時，可見光範圍的平均光穿透率達到98 %。而當微波氫/氮電漿退火隨功率增加到600 W、氣體壓力25 Torr，因為給予能量過強，導致薄膜結構晶格扭曲，因此電性變差。從拉曼光譜中發現微波氫/氮電漿隨著氣體壓力增加時，E2(High) 振動模式隨之變弱，但A1(LO)的振動模式反而變強。從以上結果得知，加入氮氣後，有助於氫原子密度及熱能增加，因此微波氫/氮電漿會比未處理及微波氫電漿相同條件處理後得到更多額外的能量，使得GAZO薄膜的光電為結構特性有所改善。

This work describes gallium and aluminum doped zinc oxide (GAZO) films with unheated substrate during sputtering were post treated microwave hydrogen/nitrogen plasma annealing with different microwave powers of 200 W、400 W、600 W, and different microwave process pressures of 10 Torr、15 Torr、20 Torr、25 Torr. Electrical, optical and microstructure properties of GAZO films were measured by hall measurement, optical spectrometer, X-ray diffractometer, scanning electron microscope, photoluminescence meter and raman spectrpmeter respectively.
The results indicate the GAZO films post treated with 400W, 25 torr microwave hydrogen/nitrogen plasma annealing can have the electrical resistivity of 7.17×10-4Ω-cm and average optical transmittance of 96 %.

頁數
中文摘要 i
英文摘要 iii
致謝 iv
總目錄 v
圖目錄 ix
表目錄 xv

第一章緒論 1
1.1前言 1
1.2相關文獻回顧 5
第二章理論基礎 9
2.1透明導電膜介紹 9
2.1.1透明導電膜之光性質 9
2.1.2透明導電膜之電性質 10
2.1.3透明導電膜歷史 12
2.2氧化鋅材料特性介紹 13
2.3柏斯坦-摩斯(Burstein-Moss)效應 14
2.4電漿 15
2.5濺鍍原理 16
2.6薄膜成長 17
2.7薄膜表面型態結構 19
2.8微波氫氣電漿機制 21
2.9拉曼散射機制 27
第三章實驗方法與步驟 28
3.1實驗流程 28
3.2實驗材料 30
3.3濺鍍基板清洗 30
3.4濺鍍GAZO薄膜 31
3.4.1真空濺鍍系統 31
3.4.2連續式濺鍍 33
3.5後製程系統與參數說明 35
3.5.1後製程腔體 35
3.5.2真空退火 36
3.5.3微波氫氣電漿退火 37
3.6 薄膜特性分析 38
3.6.1膜厚分析儀器 38
3.6.2 X-ray 繞射分析 39
3.6.3掃描式電子顯微鏡 40
3.6.4霍爾電性分析 41
3.6.5光譜分析 42
3.6.6螢光光譜分析 43
3.6.7拉曼光譜分析 44
第四章結果與討論 45
4.1製程垂直式基板持續在室溫下-後續微波電漿功率維持200 W，後處理10分鐘，改變氣體種類(純氫、氫氣/氮氣比例 1:1)，及氣體壓力(10 Torr、15 Torr、20 Torr、25 Torr) 45
4.1.1薄膜結構分析 45
4.1.2薄膜表面分析 49
4.1.3薄膜電性分析 53
4.1.4薄膜光學分析 56
4.1.5光電性質綜合比較 61
4.1.6討論 62
4.1.7薄膜PL分析 66
4.1.8薄膜拉曼光譜分析 68
4.2製程垂直式基板持續在室溫下-後續微波電漿功率維持400 W，後處理10分鐘，改變氣體種類(純氫、氫氣/氮氣比例 1:1)，及氣體壓力(10 Torr、15 Torr、20 Torr、25 Torr) 70
4.2.1薄膜結構分析 70
4.2.2薄膜表面分析 74
4.2.3薄膜電性分析 78
4.2.4薄膜光學分析 81
4.2.5光電性質綜合比較 86
4.2.6討論 87
4.2.7薄膜PL分析 91
4.2.8薄膜拉曼光譜分析 93
4.3製程垂直式基板持續在室溫下-後續微波電漿功率維持600 W，後處理10分鐘，改變氣體種類(純氫、氫氣/氮氣比例 1:1)，及氣體壓力(10 Torr、15 Torr、20 Torr、25 Torr) 95
4.3.1薄膜結構分析 95
4.3.2薄膜表面分析 99
4.3.3薄膜電性分析 103
4.3.4薄膜光學分析 106
4.3.5光電性質綜合比較 111
4.3.6討論 112
4.3.7薄膜PL分析 116
4.3.8薄膜拉曼光譜分析 118
第五章結論 120
參考文獻 121

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