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研究生:曾俊傑
研究生(外文):Jyun-Jie Tseng
論文名稱:(100)氧化鋅壓電薄膜特性與雙層體聲波共振器之研究
論文名稱(外文):Study on The Properties of (100) Oriented ZnO Piezoelectric Thin Film and Double Layer Bulk Acoustic Wave Resonator
指導教授:李茂順
指導教授(外文):Maw-Shung Lee
學位類別:碩士
校院名稱:國立高雄應用科技大學
系所名稱:電子工程系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:101
畢業學年度:100
語文別:中文
中文關鍵詞:氧化鋅氮化鋁體聲波共振器
外文關鍵詞:ZnOAlNBulk Acoustic WaveResonator
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本研究以反應性射頻磁控濺鍍法成長(100)取向氧化鋅薄膜與(100)取向氮化鋁薄膜,並應用於雙層薄膜體聲波共振器(FBAR)之研製。實驗製作之薄膜體聲波共振器結構為金屬電極/氧化鋅壓電層/氮化鋁壓電層/金屬電極/氮化矽/二氧化矽。
實驗結果顯示,氧化鋅薄膜製程參數為濺鍍功率200W、濺鍍壓力11.5 mTorr、基板溫度150 oC、氧分率20% 可成功沉積出(100)取向氧化鋅薄膜,氮化鋁薄膜最製程參數為濺鍍功率300W、濺鍍壓力9 mTorr、基板溫度300 oC、氮分率40% 可成功沉積出(100)取向氮化鋁薄膜並作為FBAR元件之應用。FBAR元件經量測所得到之共振頻率為2.66GHz,其結果近乎COMSOL模擬之2.701GHz。
In this study, we deposited (100)-oriented ZnO and (100)-oriented AlN film by reactive RF magnetron sputtering method, also apply two films to fabricate thin film bulk acoustic resonator (FBAR). The FBAR structure was the metal electrode / ZnO piezoelectric layer / AlN piezoelectric layer / metal electrode / silicon nitride / silicon dioxide.
Finally, the optimal sputtering parameters for (100)-oriented ZnO films were found to be RF power of 200W, sputtering pressure of 11.5 mTorr , substrate temperature of 150 oC, oxygen concentration of 20% , and thw (100)-oriented AlN films were found to be RF power of 300W, sputtering pressure of 9 mTorr, substrate temperature of 150 oC, nitrogen concentration of 40%. The resonant frequency of FBAR device was measured as 2.66GHz, near the COMSOL simulation of 2.701GHz.
總目錄
中文摘要--------------------------------------- I
ABSTRACT--------------------------------------- II
誌謝------------------------------------------- III
總目錄----------------------------------------- IV
表目錄----------------------------------------- VI
圖目錄----------------------------------------- VII
第一章 緒論------------------------------------------- 1
第二章 理論分析--------------------------------------- 4
2.1 氧化鋅之結構與特性----------------------------- 4
2.2 氮化鋁之結構與特性----------------------------- 4
2.3 壓電理論--------------------------------------- 5
2.3.1 壓電效應之原理--------------------------------- 6
2.3.2 正壓電效應------------------------------------- 7
2.3.3 逆壓電效應------------------------------------- 7
2.3.4 壓電材料--------------------------------------- 7
2.4 聲波的運動方程式------------------------------- 8
2.5 壓電理論的數學關係式--------------------------- 11
2.6 壓電體內的聲波傳遞----------------------------- 15
2.7 各晶向氧化鋅之薄膜特性分析--------------------- 21
2.8 各晶向氮化鋁之薄膜特性分析--------------------- 21
2.9 濺鍍原理--------------------------------------- 22
2.9.1 電漿------------------------------------------- 22
2.9.2 輝光放電--------------------------------------- 24
2.9.3 濺鍍------------------------------------------- 25
2.9.4 射頻磁控濺鍍----------------------------------- 27
2.9.5 反應性濺射模型--------------------------------- 28
2.9.6 反應性射頻磁控濺鍍----------------------------- 29
2.10 薄膜沉積理論----------------------------------- 30
2.11 鍍膜參數簡介----------------------------------- 33
2.11.1 氧化鋅鍍膜參數簡介----------------------------- 33
2.11.2 氮化鋁鍍膜參數簡介----------------------------- 36
2.12 PECVD原理-------------------------------------- 36
2.13 矽基板蝕刻------------------------------------- 37
2.13.1 KOH濕蝕刻 ------------------------------------- 37
2.13.2 ICP乾蝕刻 ------------------------------------- 38
2.14 FBAR 結構原理---------------------------------- 41
2.15 量測儀器原理----------------------------------- 42
2.15.1 X光繞射儀(XRD)原理----------------------------- 42
2.15.2 表面輪廓儀(Profile Meter)原理------------------ 42
2.15.3 網路分析儀(network analyzer)原理--------------- 43
第三章 實驗方法與步驟--------------------------------- 44
3.1 晶片清洗--------------------------------------- 44
3.2 黃光微影製程----------------------------------- 45
3.3 薄膜製程--------------------------------------- 46
3.3.1 濺鍍系統簡介----------------------------------- 46
3.3.2 氧化鋅壓電薄膜沉積----------------------------- 50
3.3.3 氮化鋁壓電薄膜沉積----------------------------- 51
3.3.4 電極------------------------------------------- 52
3.3.5 電極薄膜沉積----------------------------------- 52
3.4 蝕刻製程--------------------------------------- 53
3.4.1 濕蝕刻製程------------------------------------- 53
3.4.2 乾蝕刻製程------------------------------------- 54
3.5 FBAR 製作步驟---------------------------------- 54
3.5.1 支撐層與蝕刻阻擋層製作------------------------- 54
3.5.2 薄膜製作--------------------------------------- 55
3.5.3 背部空腔蝕刻----------------------------------- 56
3.6 薄膜特性量測----------------------------------- 56
3.6.1 X光繞射分析------------------------------------ 56
3.6.2 表面輪廓量測儀分析----------------------------- 57
3.7 模擬分析--------------------------------------- 57
第四章 實驗結果與討論--------------------------------- 58
4.1 以有限元素分析法模擬壓電薄膜體聲波模型--------- 58
4.1.1 (100)晶向之氧化鋅薄膜-------------------------- 58
4.1.2 (100)晶向之氮化鋁薄膜-------------------------- 59
4.1.3 (100)晶向之雙層壓電薄膜------------------------ 59
4.2 壓電薄膜製程探討------------------------------- 59
4.2.1 壓電薄膜製程參數------------------------------- 60
4.2.2 金屬電極對氧化鋅薄膜晶向成長的影響------------- 60
4.2.3 顯影液對薄膜之影響----------------------------- 61
4.3 蝕刻製程--------------------------------------- 61
4.4 FBAR元件特性量測------------------------------- 62
第五章 結論與未來展望--------------------------------- 64
參考文獻----------------------------------------------- 106
【1】Benetti, M.; Cannata, D.; Di Pietrantonio, F.; Foglietti, V.; Verona, E.; "Microbalance chemical sensor based on thin-film bulk acoustic wave resonators," Applied Physics Letters , vol.87, no.17, pp.173504-173504-3, Oct 2005.
【2】Martin Nirschl, AnjaBluher, Christiane Erler, Beate Katzschner, Inger ikholm-Lundin, Sanna Auer, Janos Voros, Wolfgang Pompe, Matthias Schreiter, Michael Mertig, "Film bulk acoustic resonators for DNA and protein detection and investigation of in vitro bacterial S-layer formation", Sensors and Actuators A: Physical, Volume 156, Issue 1, EUROSENSORS XXII, 2008, Pages 180-184 ,November 2009.
【3】WenchengXu; Xu Zhang; Hongyu Yu; Abbaspour-Tamijani, A.; JunseokChae; "In-Liquid Quality Factor Improvement for Film Bulk Acoustic Resonators by Integration of Microfluidic Channels," Electron Device Letters, IEEE , vol.30, no.6, pp.647-649, June 2009.
【4】Penza, M.; Aversa, P.; Cassano, G.; Suriano, D.; Wlodarski, W.; Benetti, M.; Cannata, D.; Di Pietrantonio, F.; Verona, E, "Thin-Film Bulk-Acoustic-Resonator Gas Sensor Functionalized With a Nanocomposite Langmuir–Blodgett Layer of Carbon Nanotubes," Electron Devices, IEEE Transactions on , vol.55, no.5, pp.1237-1243, May 2008.
【5】 XiaotunQiu, Rui Tang, Jie Zhu, Jon Oiler, Cunjiang Yu, Ziyu Wang, Hongyu Yu, The effects of temperature, relative humidity and reducing gases on the ultraviolet response of ZnO based film bulk acoustic-wave resonator, Sensors and Actuators B: Chemical, Volume 151, Issue 2, Pages 360-364 28, January 2011.
【6】Y.C. Lin, C.R. Hong, H.A. Chuang, "Fabrication and analysis of ZnO thin film bulk acoustic resonators", Applied Surface Science, Volume 254, Issue 13, 30 , Pages 3780-3786,April 2008.
【7】Wu, Sean; Lin, Zhi-Xun; Lee, Maw-Shung; Ro, Ruyen; , "Bulk acoustic wave analysis of crystalline plane oriented ZnO films," Journal of Applied Physics , vol.102, no.8, pp.084908-084908-7, Oct 2007.
【8】Maw-Shung Lee, Sean Wu, Zhi-Xun Lin and Ruyen Ro , "Bulk Acoustic Wave Analysis of Crystalline-Plane-Oriented Aluminum Nitride Films",Jpn. J. Appl. Phys. 46 ,pp. 6719-6726 ,2007.
【9】周文南,"反應性射頻磁控濺鍍法成長(100)氧化鋅薄膜之研究",國立高雄應用科技大學電子工程研究所碩士論文,2010.
【10】Maw-Shung Lee Sean Wu, Zhi-Xun Lin, and Ruyen Ro, “Bulk Acoustic Wave Analysis of Crystalline -Plane-Oriented Aluminum Nitride Films,” Japanese Journal of Applied Physics, Vol. 46, pp.6719-6726, 2007.
【11】 Lakin, K.M. , "Thin film resonator technology," Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on , vol.52, no.5, pp. 707- 716, May 2005.
【12】蔡政宏,"微機電製程應用於薄膜體聲波元件之研究",國立中山大學電機工程系碩士論文,2006.
【13】林瑞欽,"氧化鋅薄膜應用於薄膜體聲波共振器之研究",國立中山大學電機工程系博士論文,2008.
【14】Yu-Ri Kang, Sung-Chul Kang, Kyeong-Kap Paek, Yong-Kook Kim, Soo-Won Kim, Byeong-Kwon Ju, Air-gap type film bulk acoustic resonator using flexible thin substrate, Sensors and Actuators A: Physical, Volume 117, Issue 1, 3 Pages 62-70, January 2005.
【15】Mathias Link, Matthias Schreiter, Jan Weber,Robert Primig, Dana Pitzer, and Reinhard Gabl, "Solidly mounted ZnO shear mode film bulk acoustic resonators for sensing applications in liquids",Ultrasonics, Ferroelectrics and Frequency Control, IEEE , Volume: 53 Issue:2, Pages 492-496,Feb. 2006.
【16】Linh Mai, Jae-young Lee, Van-su Pham, Giwan Yoon , "A new fabrication technique for 2.75 GHz ZnO-based FBAR devices," Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the , vol.3, no., pp.1-2, 23-28 Feb. 2008.
【17】鍾崇仁,"雙頻固態微型諧振器及其體聲波特性之研究",國立中山大學電機工程系博士論文,2008.
【18】林素霞,"氧化鋅薄膜的特性改良及應用之研究",國立成功大學材料科學及工程研究所博士論文,2003.
【19】傅國彰,"反應性射頻磁控濺鍍法成長非c軸取向氧化鋅薄膜特性之研究" 國立高雄應用科技大學電子工程研究所碩士論文,2008.
【20】Paik-Kyun Shin, YoichiroAya, Tomoaki Ikegami, Kenji Ebihara, Application of pulsed laser deposited zinc oxide films to thin film transistor device, Thin Solid Films, Volume 516, Issue 12, 30, Pages 3767-3771, April 2008.
【21】R. Rodriguez-Clemente, B. Aspar, N. Azema, B. Arms, C.Combescure, J. Durand and A. Figueras, “Morphological Properties of Chemical Vapour Deposited AlN Films,” Journal of Crystal Growth, Vol. 133, pp. 59-70, 1993.
【22】E. Rille, R. Zarwasch and H. K. Puller, “Properties of Reactively D.C.-Magnetron-Sputtered A1N Thin Films,” Thin Solid Films, Vol. 228, pp. 215-217, 1993.
【23】吳朗,"電子陶瓷-壓電"全欣資訊圖書股份有限公司, 1994.
【24】Joe F. Rosenbaum, "Bulk Acoustic wave Theory and Devices", ARTECH HOUSE, 1998.
【25】林盟善,"以氮化鋁為壓電層之薄膜型塊體聲波諧振器",國立成功大學電機工程研究所碩士論文,2003.
【26】Hong Xiao 著,羅正忠、張鼎張 譯,"半導體製程技術導論",培生,2009
【27】施敏著,張俊彥譯,"半導體元件之物理與技術",儒林,pp 425, 1990.
【28】宋宏泰,"在不同基板上以射頻磁控濺鍍法成長氮化鋁薄模",國立成功大學電機工程研究所碩士論文,1998.
【29】F. Shinoki, A. Itoh, "Mechanism of rf reactive sputtering", J. Appl. Phys., Vol. 46(8), pp.3381-3384, 1975.
【30】H. Okano, Y. Takahashi, T. Tanaka, K. Shibata, S. Nakano, "Preparation of c-Axis Oriented AlN Thin Films by Low-Temperature Reactive Sputtering", J.J.A.P., Vol. 31(1), pp.3446-3451, 1992.
【31】E. Janczak-Bienk, H. Jensen., G. Sorensen."Materials Science and Engineering",A140, p.696, 1991.
【32】Jhon L. Vossen, Wermer Ken."Thin Film Process Part II-1", Academic Press.,
San Diego, California, 1978.
【33】F. S. Ohuchi, P. E. Russell, Vac. Sci. Technol., Vol. A5(4), pp.1630, 1978.
【34】O. Almen and G. Bruce , Nucl. Instrumamd Methods ,1961.
【35】阿部東彥, 家田正之, "電漿化學", 高正雄譯, 復漢出版社,p.84, 1984.
【36】楊錦章,"基本濺鍍電漿", 電子發展月刊, 68, 1983.
【37】林志勳,"表面聲波元件在藍克賽基板之研究",國立高雄應用科技大學電子與資訊工程學系碩士論文,2005.
【38】Brian Chapman, Glow Discharge Processes, John Wiley and Sons,
New York, 1980.
【39】 魏中聖,蕭俊卿,沈弘俊, "射頻濺鍍功率對氧化鋅薄膜機械性質之影響",真空科技, 第二十卷第一期, pp.15-21, 2007.
【40】C.M. Chang, S.I Tsai, T.S. Wey, Y.M. Lu, W.S Hwang, "Optimization of Sputtering Parameters for High Conductive and Transparent Zinc Oxide Films", Journal of Materials Science and Engineering, Vol. 36, No. 1, pp.31-35, 2004.
【41】U. Lampe and J. Muller, " Thin-Film ZnO properties and application ", Ceramics Bulletin, 69(12) 1959, 1990.
【42】F.C.M. Van De Pol, F. R. Blom and Th. J. A. Popma, "R.F. Planar Magnetron Sputtered ZnO Film I: Structure Properties", Thin Solid Films, 204,349, 1991.
【43】B.T. Khuri-Yakub, G.S. Kino and P. Galle, " Studies of the Optimum Conditions for Growth of RF-Sputtered ZnO Film", J. Appl. Phys., 46(8)132, pp.3266-3272, 1975.
【44】Donald L. Smith "Thin-Film Deposition", The McGraw-Hill Companies, Inc, pp.575-576, 1995.
【45】S. Srivastav, C V R Vasant Kumar and A Mansingh, "Effect of Oxygen on the Physical Parameters of RF Sputtered ZnO Thin Film", J. Appl. Phys., 22, pp.1768-1772, 1989.
【46】E. M. Bachari, G. Baud, S .Ben Amor, M. Jacquet, "Structure and Optical Properties of Sputtered ZnO Films", Thin Solid Films, 348, pp.165-172, 1999.

【47】J. Lu, Z. Huang, L. Wang, and B. Zhao, "Synthesis and properties of ZnO Film with (100) orientation by SS-CVD", Appl. Surf. Sci. 207, pp.295-299, 2003.
【48】Chen Gen, Tang Cai-fan, DaiLi-ping, Deng hong"SS CVD Growth of a-b Axis Oriented ZnO Thin Film", Chinese Journal of Luminescence, Vol.27, No.5, pp.773-776, 2006.
【49】O.Yamazaki, T. Mitsuyu, and K. Wasa, "ZnO Thin-Film SAW Devices", IEEE Transactions on Sonics and Ultrasonics, Vol.SU-27, No.6, pp.369-378, 1980.
【50】Parmanand Sharma, K. Sreenivas, and K. V. Rao, J,"Analysis of ultraviolet photoconductivity in ZnO films prepared by unbalanced magnetron sputtering", Appl. Phys. 93, 3963,2003.
【51】方漢瑞,” 反應性射頻磁控濺鍍法成長(100)取向氮化鋁薄膜
MIS特性之研究”,國立高雄應用科技大學電子工程研究所碩士論文,2010.
【52】吳乾禎,"單晶矽太陽能電池之表面結構設計與光學計量模型之建立",國立成功大學奈米科技暨微系統工程研究所碩士論文,2008.
【53】Hiroshi Tanaka , Shuichi Yamashita , Yoshitsugu Abe , Mitsuhiro Shikida, Kazuo Sato, "Fast etching of silicon with a smooth surface in high temperature ranges near the boiling point of KOH solution", Sensors and Actuators A: Physical, Volume 114, Issues 2-3, Selected papers from Transducers 03,1,Pages 516-520,September,2004.
【54】張家豪,魏鴻文,翁政輝,柳克強,李安平,寇崇善,吳敏文,曾錦清,蔡文發,鄭國川,"電漿源原理與應用之介紹",物理雙月刊,28期2卷,page.440-451,4月,2006.
【55】Y. Wu, D.L. Olynick, A. Goodyear, C. Peroz, S. Dhuey, X. Liang, S. Cabrini, "Cryogenic etching of nano-scale silicon trenches with resist masks", Microelectronic Engineering, In Press, Corrected Proof, Available online 30 November,2010.
【56】J. W. Lee, C. R. Abernathy, S. J. Pearton, F. REN, C. Constantine, C.Barratt and R. J. Shul: "Comparison of dry etch damage inGaAs/AlGaAs heterojounction bipolar transistors exposed to ECR and ICP Ar plasma", Solid State Electronics, vol.42, No.5,pp.733-742, 1998.
【57】de Boer, M.J.; Gardeniers, J.G.E.; Jansen, H.V.; Smulders, E.; Gilde, M.-J.; Roelofs, G.; Sasserath, J.N.; Elwenspoek, M.,"Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures",Microelectromechanical Systems, Journal of , vol.11, no.4, pp. 385- 401, Aug 2002.
【58】Henri Jansen, Meint de Boer, HenkWensink, Ben Kloeck, MikoElwenspoek, The black silicon method. VIII. A study of the performance of etching silicon using SF6/O2-based chemistry with cryogenical wafer cooling and a high density ICP source, Microelectronics Journal, Volume 32, Issue 9, Pages 769-777, September 2001.
【59】鄭晃忠、丁坤山與康宗貴,"應用於超大積體電路的電漿蝕刻技術",電子資訊,第2卷,第2期,頁55-58,1996.
【60】F. Ren, J. W. Lee, C. R. Aberathy and S. J. Peaton,"Dry etch damage inductively coupled plasma exposed GaAs/AlGaAsheterojunction bipolar transistors", Applied Physics Letters, vol.70, No.18, pp.2410-2412, 1997.
【61】L. Sainiemi and S. Franssila, J,"Mask material effects in cryogenic deep reactive ion etching",Vac. Sci. Technol. B 25, 801,2007.
【62】Ivo W. Rangelow, "Dry etching-based silicon micro-machining for MEMS", Vacuum, Volume 62, Issues 2-3, Pages 279-291, 2001.
【63】Kazuhiko Hosomi, Toshihiko Fukamachi, Hiroji Yamada, Toshio Katsuyama, Yasuhiko Arakawa, "Optical characteristics of one-dimensional photonic crystals composed of high-aspect-ratio Si walls fabricated on V-grooved wafer", Photonics and Nanostructures - Fundamentals and Applications, Volume 4, Issue 1, Pages 30-34, February 2006.
【64】Yuxing Zhang;Zuoqing Wang; Cheeke, J.D.N.; "Resonant spectrum method to characterize piezoelectric films in composite resonators," Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on , vol.50, no.3, pp. 321- 333, March 2003.
【65】CHARLES KITTEL著,洪連輝,劉立基,魏榮君譯, "Introduction to Solid State Physics 8/e",高立圖書有限公司,1997.
【66】Yuan-Feng Chiang, Chia-Chi Sung, and Ruyen Ro, “Effects of metal buffer layer on characteristics of surface acoustic waves in ZnO/metal/diamond structures”, Applied Physics Letters, vol. 96, no. 15, pp. 154104-1~3, 2010.04
【67】F. Li, D. Li, J. Dai, H. Su, L. Wang, Y. Pu, W. Fang, and F. Jiang, “Effect of the initial thin Ti buffer layers on the quality of ZnO thin films grown on Si(111) substrates by MOCVD ,” Superlattices and Microstructures, vol. 40, p. 56, 2006.
【68】C. Lee, A. Park, Y. J. Cho, W. I. Lee, and H. W. Kim, “The role of the Zn buffer layers in the structural and photoluminescence properties of ZnO films on Zn buffer layers deposited by RF magnetron sputtering,” Vacuum, vol. 82, p. 1364, 2008.
【69】D.J. Kang, J.S. Kim, S.W. Jeong, Y. Roh, S.H. Jeong, J.H. Boo,” Structural and electrical characteristics of R.F. magnetron sputtered ZnO films”, Thin Solid Films 475, 160, 2005.
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