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研究生:曾琬鈞
研究生(外文):Wan-Jyun Zeng
論文名稱:等比迴路面積的高溫超導量子干涉濾波器
論文名稱(外文):Parallel Superconducting Quantum Interference Filter with Loop Areas in Geometric Progression
指導教授:鄭振宗鄭振宗引用關係
指導教授(外文):Jen-Tzong Jeng
學位類別:碩士
校院名稱:國立高雄應用科技大學
系所名稱:機械與精密工程研究所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
畢業學年度:100
語文別:中文
論文頁數:61
中文關鍵詞:高溫超導體超導量子干涉元件超導量子干涉濾波器
外文關鍵詞:High-transition-temperature superconductorSQUIDSQIF
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本研究提出迴路面積為等比級數的並聯式SQIF設計,其迴路面積相對比例為無理數,使電流-磁通曲線具有明顯的零磁場反峰,避免臨界電流散佈影響。數值模擬結果顯示隨著SQIF的接面增加,主要反峰與次要反峰比例有明顯改進,而電壓-磁場與電流-磁場轉移係數均接近超導量子干涉柵(SQIG)的最大值。
利用射頻磁控濺鍍法在鈦酸鍶(SrTiO3)基板上成長釔鋇銅氧(YBCO)高溫超導薄膜來製作SQIF陣列元件,陣列共有95個成員,成員的電壓-電流(V-I)與電壓-磁通密度(V-B)曲線是利用本實驗室自行開發的93通道低溫電性量測裝置及電流波形產生器搭配DAQ擷取程式來量取。量測結果顯示,薄膜元件的臨界電流密度與其他文獻相當。
In this work, we proposed the parallel SQIF design with the loop areas in geometric progression, of which the common ratio is a selected irrational number. The largest loop area is at the central part of the SQIF, and the loop areas reduce monotonically from the center to either ends of junction array. This arrangement avoids the significant reduction in total loop area caused by the failure of junctions located on the ends of junction array. The simulation results show that when the number of junctions increases, the sub-peaks are suppressed and the main anti-peak is improved significantly. It predicts that the geometric progression SQIF has a large dI/dB and dV/dB as SQIG.
The SQIF made from high-TC superconducting YBa2Cu3O7-x (YBCO) films grown on SrTiO3 substrates was fabricated. The SQIF array has 95 elements, of each the voltage-current (V-I) and voltage-field (V-B) curves of series arrays were characterized by using the measurement system consisting of the homemade 93-switching-channel cryostat, the measurement electronics, and the self-developed data acquisition software. The measurement results showed that the critical current density of YBCO film components is comparable to the results reported in literatures.
摘 要 I
ABSTRACT II
致謝 IV
目 錄 V
表 目 錄 VII
圖 目 錄 VIII
第一章 緒論 1
1.1 研究背景與動機 1
第二章 文獻回顧 4
第三章 實驗原理與方法 7
3.1 實驗原理 7
3.1.1 約瑟夫森接面 7
3.1.2 電阻分流模型 8
3.1.3 直流超導量子干涉元件 10
3.1.4超導量子干涉濾波器 11
3.2實驗方法 13
3.2.1 SQIF設計與模擬 13
3.2.2 元件製程 15
3.2.3 薄膜成長 15
3.2.4 接腳製作 20
3.2.5 微影製程 21
3.2.6 蝕刻製程 24
3.2.7 打線接合 25
3.2.8 量測系統 26
第四章 實驗結果與討論 28
4.1 SQIF特性模擬結果 28
4.2 釔鋇銅氧薄膜元件特性測定 31
4.2.1 薄膜元件外觀 31
4.2.2 薄膜元件電壓-電流曲線 32
4.3 超導量子干涉濾波器陣列 40
4.3.1 SQIF元件外觀 40
4.3.2 電壓-電流曲線:臨界電流與常態電阻 41
4.3.3 電壓-磁通特性 47
4.3.4 電流-磁通特性 49
第五章 結論 53
參考文獻 55
附錄A 58
附錄B 60
附錄C 61
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