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研究生:廖俊嘉
研究生(外文):Liao, ChunChia
論文名稱:高功率脈衝磁控濺鍍含鈦金屬 二硫化鉬薄膜之性質研究
論文名稱(外文):Study on Characterizations of Titanium-containing Molybdenum Disulfide Films by High Power Impulse Magnetron Sputter Technology
指導教授:張奇龍張奇龍引用關係
指導教授(外文):Chang, ChiLung
口試委員:張奇龍何偉友張銀祐
口試委員(外文):Chang, ChiLungHo, WeiYuChang, YinYu
口試日期:2012-07-20
學位類別:碩士
校院名稱:明道大學
系所名稱:材料科學與工程學系碩士班
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:82
中文關鍵詞:高功率脈衝磁控濺鍍二硫化鉬
外文關鍵詞:HiPIMSMoS2
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本研究以高功率脈衝磁控濺射法(HiPIMS)沉積含鈦金屬之二硫化鉬薄膜於鎢鋼、304 不鏽鋼薄片、SKH9 高速鋼、矽晶片基材上,主要以鈦靶功率和脈衝頻率做為變化參數,先改變靶功率得到最好之磨擦係數,再以其改變脈衝頻率,分別探討對二硫化鉬薄膜的微結構、機械性質之影響。
利用電漿光譜分析儀(OES)分別探討HiPIMS 與dcMS 的電漿強度與密度,再使用掃描式電子顯微鏡(SEM)、X 光繞射儀(XRD)、原子力顯微鏡(AFM)及觀察含屬鈦之二硫化鉬薄膜之微結構,再以磨耗試驗(Pin-on-disc)、高溫磨耗、刮痕(Scratch Testing Machine)、奈米壓痕測試 (Nano-Indentation)測得機械性質。
分析結果磨耗試驗TiMoS2 對WC 球對磨,磨擦係數從0.5 降至0.13;奈米壓痕試驗得到硬度為0.2 GPa 提升至6GPa;原子力顯微鏡顯示表面粗度(Ra)為15 nm 降至4 nm,結果顯示隨著鈦靶功率的上升TiMoS2 薄膜會提升潤滑性、硬度、薄膜壽命。
HiPIMS 與dcMS 相較下HiPIMS 所沉積的薄膜,擁有較佳的附著性、電漿密度、磨擦係數、沉積率。
In this study, we synthesized a composite coating, which the mixing of Ti into the MoS2 structure by high power impulse magnetron sputtering (HiPIMS) process in an argon atmosphere using titanium and molybdenum disulfide targets. Experimental results indicate that the titanium incorporation in MoS2 structure effectively enhance the density and mechanical strength of the film structure, which were strongly dependent on the titanium content in this study range. A higher titanium content of MoST film corresponds to a increases hardness and wear life, decreases surface roughness and friction coefficient. On the other hand,the emission from the Ti, MoS2 and Ar species increases greatly in HiPIMS indicating the higher ionization of the metal and gas species, than that of DC sputtering process. Result show that an extremely high target power density can led to a better compact structure with an increase of titanium content.
In addition, it is found that no obviously different by changing impulse duration in the value of friction coefficient. However, a higher value of hardness is occurred in impulse duration of 200 μs at fixed target power.
中文摘要 ......................................... i
英文摘要 ......................................... ii
誌謝 ............................................ iii
目錄 ............................................ iv
表目錄 .......................................... vi
圖目錄 .......................................... viii
第一章 緒論 ...................................... 1
1.1 前言 ........................................ 1
第二章 文獻回顧 ................................... 2
2.1 薄膜沉積技術 .................................. 2
2.2 直流濺射 ..................................... 3
2.2.1 濺射原理 ................................... 3
2.2.2 磁控濺射 ................................... 4
2.3 薄膜成長機制與結構 ............................. 5
2.3.1 薄膜成長機制 ................................ 5
2.4 高功率磁控脈衝濺射 ............................. 7
2.4.1 何謂高功率脈衝磁控濺射 ........................ 7
2.4.2 沉積率 ..................................... 7
2.4.3 偏壓對HiPIMS 的影響.......................... 9
2.4.3 薄膜均勻性 .................................. 10
2.4.5 金屬沉積率 .................................. 13
2.4.6 金屬薄膜密度 ................................ 14
2.4.7 HIPIMS 與dcMS 解離率比較 .................... 15
2.5 MoS2 文獻 .................................... 16
第三章 實驗方法與步驟 ............................... 18
3.1 實驗流程 ...................................... 18
3.2 實驗設備 ...................................... 19
3.3 製備TiMoS2 薄膜 ............................... 20
3.4 試片準備 ...................................... 23
3.4.1 基材選擇 .................................... 23
3.4.2 試片清洗 .................................... 24
3.5 分析儀器 ...................................... 25
3.5.1 場發射掃描式電子顯微鏡 ......................... 25
3.5.2 能量散佈光譜儀 ............................... 27
3.5.3 X 光繞射分析儀 ............................... 28
3.5.4 磨耗試驗 .................................... 29
3.5.5 高溫磨耗試驗 ................................. 32
3.5.6 奈米壓痕試驗 ................................. 33
3.5.7 刮痕試驗 .................................... 35
3.5.8 感應耦合電漿質譜儀 ............................ 36
3.5.9 歐傑電子能譜 ................................. 37
第四章 結果與討論 ................................... 38
4.1 感應耦合電漿質光譜分析 ........................... 38
4.2 脈衝週期波型圖 .................................. 38
4.2.1 改變MoS2 靶功率之波型圖 ........................ 40
4.2.2 改變MoS2 靶脈衝週期之波型圖 ..................... 40
4.3 改變鈦靶功率沉積函鈦二硫化鉬薄膜性質分析 ............. 42
4.3.1 表面與斷面形貌分析 ............................. 42
4.3.2 薄膜成份分析 .................................. 48
4.3.3 XRD 相分析 ................................... 51
4.3.4 磨耗行為分析 .................................. 53
4.3.5 磨耗軌跡元素分析 ............................... 56
4.3.6 奈米壓痕硬度分析 ............................... 60
4.3.7 附著力分析 .................................... 62
4.4 改變脈衝週期沉積函鈦二硫化鉬薄膜性質分析 .............. 64
4.4.1 表面與斷面形貌分析 .............................. 64
4.4.2 薄膜成份分析 ................................... 69
4.4.3 XRD 相分析 .................................... 72
4.4.4 磨耗行為分析 ................................... 73
4.4.5 磨耗軌跡元素分析 ................................ 75
4.4.6 奈米壓痕硬度分析 ................................ 78
4.4.7 附著力分析 ..................................... 79
第五章 結論 .......................................... 81
參考文獻 ............................................. 82
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