臺灣博碩士論文加值系統

隨著半導生產技術日漸的進步，金氧半場效電晶體(Metal Oxide Semiconductor Field Effect Transistor, MOSFET)已從90奈米的世代進入到45奈米甚至到現在的28奈米，遵循摩爾定律(Moore’s law)的原則下，藉著元件尺寸不斷地微縮，金氧半場效電晶體的驅動電流效能是可以被提升，但到奈米等級時，即有很大的製程技術瓶頸。為了解決此等問題，研究發現，應變矽工程(Strain Si Engineering)可以適度地改善元件的驅動電流，且其製程模組可以被整合於CMOS製程量產中。
應變工程通常可分為雙軸應變與單軸應變二種。全面應變或雙軸應變乃是一個二維的效應，利用接觸式蝕刻停止層(Contact Etch Stop Layer, CESL)的製程改變產生壓縮或伸拉應變。雖元件製於同一基板上，但不同的通道位置，其應變產生的應力大小也些許不同，故其元件製作的均勻性即是最大的挑戰之一。另外，不同的通道位置具有單一方向不同的應力大小，則稱為局部應變或單軸應變。雙軸應變製程可以同時改善nMOSFET與pMOSFET效能，但是單軸製程一般只能改善其中之一，但同時也可能會劣化另一型元件。
本次研究的主題主要是討論<110>MOSFET電晶體於雙軸應變工程技術下，藉壓縮與伸拉應變的特性，對元件產生一定的電性影響。藉由實驗數據分析，可瞭解元件尺寸的縮小，在不同通道長度下，其元件通道所受的壓縮與伸拉應變，如何影響元件驅動電流效能，而此效能如何與通道電阻有相關連?

With scaling-down technology for device feature, the driving current of metal oxide semiconductor field effect transistor, MOSFET, was able to be promoted. However, the bottleneck of process development was shown when the scaling level entered nano-regime. To solve these issues, the researchers observed that the strain Si engineering is a suitable process to effectively improve the driving current. The other is that the process module is able to be integrated into the CMOS process production.
For the strain Si engineering, this technology basically contains biaxial (global) strain and uniaxial (local) strain. The biaxial strain is a 2-D effect on device. Through the adjustment of the contact etch stop layer, CESL, process, the strain on device can be tensile or compressive. Although devices were fabricated on the same substrate, the strain effect depends on the channel lengths because the stress effect is a vector summation. Therefore, the uniformity of device performance is a task force. If the channel length for device is only impacted by one-direction stress, this phenomenon is called uniaxial strain or local strain. Generally, the biaxial strain is possible to simultaneously improve the performance of nMSFETs and the pMOSFETs. However, the uniaxial strain just can promote one and degrade the other.
In this work, the electrical characteristics of <110> MOSFETs with biaxial tensile and compressive strain processes influencing the channel mobility will be investigated. Through the analysis of experimental data, the impact effect for different channel-length devices correlated to the biaxial strain engineering will be demonstrated, including the driving current, the relationship between channel resistance and different channel lengths and the driving current with channel resistance. Finally, the uniformity of channel resistance will be probed, too.

摘要 I
Abstract II
誌謝 III
目 錄 IV
表目錄 VI
圖目錄 VII
第一章 緒論 1
1.1 簡介 1
1.2 研究動機 2
第二章 元件物理 3
2.1 半導體材料介紹 3
2.2 N型與P型半導體 5
2.3 載子的傳輸現象 7
2.4 P-N接面 8
2.4.1 擴散電流 9
2.4.2 空乏區的形成 11
2.4.2 空乏區寬度 13
2.5 MOSFET元件基本架構 14
2.6 理想的MOSFET能帶圖 16
2.7 理想的MOSFET元件 17
2.8 MOSFET特性曲線 21
2.8.1 MOSFET輸出特性曲線 21
2.8.2 MOSFET轉移特性曲線 27
2.9 米勒指數 30
2.9.1 半導體材料 30
2.9.2 半導體晶體結構 30
2.9.3 米勒指數 31
2.9.4 表面密度 32
第三章 應變矽元件 35
3.1 應變矽簡介 35
3.2 全區應變矽介紹 36
3.2 局部應變矽介紹 41
3.3 應變矽面臨之問題 46
3.3 應變矽的應用 47
第四章 實驗說明與結果 49
4.1 實驗架構說明 49
4.2 實驗器材說明 50
4.2.1 六吋半導體手動探針量測平台(Probe station) 50
4.2.2 半導體參數分析儀Agilent 4156C 52
4.2.3 低洩漏開關主機Agilent E5250A 54
4.3 元件介紹 56
4.4 實驗條件 58
4.5 實驗結果 59
第五章 結論 70
參考文獻 72
作者簡介 75

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