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研究生:劉筱君
研究生(外文):Hsiao-ChunLiu
論文名稱:含碳之鎵鈰雙成分氧化物薄膜氣體感測器之研究
論文名稱(外文):A study of carbon doped Ga2O3/CeO2 thin film gas sensor
指導教授:陳進成陳進成引用關係
指導教授(外文):Chin-Cheng Chen
學位類別:碩士
校院名稱:國立成功大學
系所名稱:化學工程學系碩博士班
學門:工程學門
學類:化學工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:160
中文關鍵詞:氣體感測器氧化鎵氧化鈰摻雜
外文關鍵詞:gas sensorgallium oxidecerium oxidecarbondoping
相關次數:
  • 被引用被引用:2
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  • 下載下載:14
  • 收藏至我的研究室書目清單書目收藏:0
本研究以不同製程方式製備Ga2O3-CeO2薄膜氣體感測器,包括以真空蒸鍍熱氧化法製備氧化鎵薄膜摻雜氧化鈰,及以射頻磁控濺鍍法製備氧化鎵薄膜摻雜氧化鈰。並進一步以電漿化學氣相沉積法鍍上碳膜,製備C/Ga2O3-CeO2薄膜氣體感測器。藉由改變不同製程方式、氧化鈰摻雜厚度製備Ga2O3-CeO2、C/Ga2O3-CeO2薄膜來探討其表面型態、晶態結構、氧空缺相對濃度變化,再以酒精作為感測氣體進行感測性質的研究。
由SEM結果可知以熱蒸鍍法與水蒸氣熱氧化法製備之Ga2O3-CeO2薄膜表面型態為顆粒狀堆疊,鍍上碳膜後之C/Ga2O3-CeO2薄膜表面型態為較小顆粒的堆疊;而以濺鍍法製備之Ga2O3-CeO2薄膜表面型態為平整且小顆粒緻密排列。XRD分析顯示氧化鎵薄膜摻雜氧化鈰與鍍上碳膜後,不會改變其原有β-Ga2O3晶相。由光致螢光光譜分析發現鍍上碳膜後之C/Ga2O3-CeO2薄膜可提高Ga2O3-CeO2薄膜氧空缺濃度。根據酒精感測結果發現摻雜氧化鈰於薄膜中,可降低氣體感測器之起使操作溫度,減少感測器的能源消耗。且鍍上碳膜後之C/Ga2O3-CeO2薄膜感測度提升、響應時間縮短。

In this study, Ga2O3-CeO2 thin film gas sensors were prepared by different manufacture process. One was prepared by rheotaxial growth and thermal oxidation (RGTO) with water vapor, and the other by RF magnetron sputtering. Furthermore, the carbon doped Ga2O3-CeO2 thin film gas sensor was prepared by plasma enhanced chemical vapor deposition (PECVD). By varying the manufacture process and the dopant thickness of cerium oxide, Ga2O3-CeO2 and C/Ga2O3-CeO2 thin film gas sensors were prepared and the resulting surface morphology, crystalline structure, relative concentration of oxygen vacancies, and sensing properties in response to ethanol were investigated.
The SEM results show that the Ga2O3-CeO2 thin film prepared by using rheotaxial growth and thermal oxidation with water vapor method has granular stacking morphology. With the deposition of carbon film in Ga2O3-CeO2 thin film, the resultant C/Ga2O3-CeO2 thin film has smaller particle stacking morphology. And the sputtered Ga2O3-CeO2 thin film has a smooth morphology with very small particles and dense arrangement. The results of XRD analysis show that the crystalline phase of gallium oxide remains β-Ga2O3 after doping the cerium oxide and depositing the carbon film. Photoluminescence spectrum analysis show that C/Ga2O3-CeO2 thin film has higher concentration of oxygen vacancies than Ga2O3-CeO2 thin film. The sensing experimental results show that the thin film doped with cerium oxide can decrease the operating temperature of the gas sensor, reducing the energy consumption of gas sensor. Furthermore, the deposition of carbon film leads to a higher sensitivity and faster response time.

總目錄
中文摘要 I
英文摘要 II
誌謝 III
目錄 V
表目錄 IX
圖目錄 X
符號說明 XV

目錄
第一章 緒論 1
1.1前言 1
1.2研究動機與目的 6
1.3氧化鎵性質與結構 9
1.4氧化鈰性質與結構 14
第二章 理論基礎與文獻回顧 16
2.1物理氣相沈積 16
2.2真空蒸鍍理論 17
2.2.1真空理論 17
2.2.2蒸鍍理論 18
2.3濺鍍理論 21
2.4 電漿輔助化學氣相沉積 25
2.5薄膜成長機制與模式 26
2.5.1蒸氣原子在基板的表面行為 26
2.5.2薄膜沉積的因素 27
2.5.3薄膜的成長模式 29
2.6金屬氧化物半導體氣體感測器介紹 32
2.6.1氣體感測器工作原理 32
2.6.2氣體感測器感測機制 36
2.6.3影響氣體感測器之重要參數 43
第三章 實驗步驟與研究方法 48
3.1實驗材料 53
3.2系統設計 54
3.2.1真空蒸鍍系統 54
3.2.2高溫氧化系統 56
3.2.3磁控濺鍍系統 57
3.2.4氣體感測系統 59
3.3實驗步驟 60
3.3.1基板清洗 60
3.3.2蒸鍍程序 60
3.3.3高溫氧化 61
3.3.4濺鍍程序 61
3.3.5電漿增強化學氣相沉積( PECVD) 62
3.4分析與鑑定 63
3.4.1掃描式電子顯微鏡分析(SEM) 63
3.4.2 X射線繞射儀(X-ray diffractometer, XRD) 63
3.4.3光致螢光光譜儀(Photoluminescence, PL) 63
第四章 實驗結果與討論 65
4.1不同製程方式對薄膜型態之影響 65
4.1.1以熱蒸鍍法與水蒸氣熱氧化法製備氧化鎵薄膜摻雜氧化鈰對薄膜型態之影響 65
4.1.2以射頻磁控濺鍍法製備氧化鎵薄膜摻雜氧化鈰對薄膜型態之影響 72
4.1.3以電漿化學氣相沉積法鍍碳膜對Ga2O3-CeO2薄膜型態之影響 77
4.2 XRD分析 82
4.2.1以熱蒸鍍法與水蒸氣熱氧化法製備氧化鎵薄膜摻雜氧化鈰之XRD分析 83
4.2.2以射頻磁控濺鍍法製備氧化鎵薄膜摻雜氧化鈰之XRD分析 89
4.2.3以電漿化學氣相沉積法鍍碳膜對Ga2O3-CeO2薄膜之XRD分析 92
4.3 光致螢光光譜分析 95
4.3.1以熱蒸鍍法與水蒸氣熱氧化法製備氧化鎵薄膜摻雜氧化鈰對光致螢光光譜之影響 97
4.3.2以射頻磁控濺鍍法製備氧化鎵薄膜摻雜氧化鈰對光致螢光光譜之影響 105
4.3.3 C/Ga2O3-CeO2薄膜對光致螢光光譜之影響 110
4.4 Ga2O3-CeO2、C/Ga2O3-CeO2薄膜之感測性質探討 114
4.4.1以熱蒸鍍法與水蒸氣熱氧化法製備氧化鎵薄膜摻雜氧化鈰對感測性質之影響 116
4.4.2以射頻磁控濺鍍法製備氧化鎵薄膜摻雜氧化鈰對感測性質之影響 127
4.4.3 C/Ga2O3-CeO2薄膜對感測性質之影響 136
4.4.4 Ga2O3-CeO2、C/Ga2O3-CeO2薄膜之穩定性測試 141
第五章 結論 149
未來展望 152
參考文獻 153


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