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研究生:王偉傑
研究生(外文):Wei-ChiehWang
論文名稱:Sn2.4Ag覆晶銲錫接點之介金屬化合物之電/熱遷移現象研究
論文名稱(外文):Electromigration and Thermomigration Behavior of IMCs in Sn2.4Ag Flip Chip Solder Joint
指導教授:林光隆
指導教授(外文):Kwang-Lung Lin
學位類別:碩士
校院名稱:國立成功大學
系所名稱:材料科學及工程學系碩博士班
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:81
中文關鍵詞:電遷移熱遷移無鉛銲錫介金屬化合物
外文關鍵詞:ElectromigrationThermomigrationLead Free SolderIntermetallic Compound
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本研究係探討結構為Cu UBM/ Sn2.4Ag 銲錫/Cu基板之覆晶銲錫接點(Flip Chip Solder Joint),由電遷移與熱遷移所導致之介金屬化合物(Intermetallic Compound, IMC)反應。本研究以兩個銲錫接點為一組進行通電,電子流方向互相相反,另選一電流未流通、僅經歷時效熱處理的接點,作為通電實驗之對照組。臨場(in situ)連續觀察電遷移實驗乃將試片在室溫下施加7.5×104 A/cm2電流密度,利用臨場SEM及EDX分析界金屬化合物隨時間之變化;除臨場實驗外,亦將試片於1.5及3.0×104 A/cm2電流密度與環境溫度100℃、150℃及180℃下,通電330小時,藉分析IMC之尺寸變化,及其於銲錫接點中之分佈情形,進一步討論IMC之成長動力行為。
在臨場實驗中,發現銲錫接點歷經長時間通電後,Cu層/銲錫界面處的Cu-Sn IMC及接點內部的Ag3Sn IMC皆未有明顯的消長,僅接點內部Cu6Sn5 IMC顆粒的粒徑及數量增加。
在高溫通電實驗中,發現在1.5×104A/cm2,180℃及3.0×104A/cm2,150℃下通電會造成陰極端Cu層的嚴重消耗,溶出大量的Cu原子進入銲錫,且其遷移方向為電遷移及熱遷移效應的合力方向,並與Sn原子反應生成Cu6Sn5 IMC。而界面處的Cu3Sn IMC及銲錫內部的Ag3Sn IMC則並未受電遷移影響而明顯聚集在陽極端,其尺寸僅隨溫度呈現線性的成長趨勢;藉由動力學的分析發現Ag3Sn IMC在通電的情況下,成長活化能會下降至與液相合金反應近似,且反應機制由時效熱處理時的擴散控制轉變為反應控制。
The present study investigated the effect of electromigration and thermomigration on the evolution of intermetallic compounds (IMCs) in the flip chip Cu/Sn2.4Ag/Cu solder joints. In this study, two joints in a set were used with different directions of electrical current flow. In contrast, another joint mainly experienced heat from the ambient temperature without current stressing. The in situ current stressing test was started under current density of 7.5×104 A/cm2 under room temperature. In addition, under the high-temperature current stressing test, the solder joints were stressed with various current densities of 1.5 and 3.0×104 A/cm2 at 100℃, 150℃ and 180℃ respectively. The kinetic behavior of the growth of IMCs was investigated by analyzing their size and their distribution of IMCs in the joints.
In the in situ experiment, the thickness of Cu3Sn and Cu6Sn5 IMC at the interface between the Cu layer and the solder did not change significantly. However, the size of Cu6Sn5 IMC particles in the solder matrix became larger during current stressing.
Under the current density of 1.5×104A/cm2 at 180℃ and under 3.0×104A/cm2 at 150℃, uneven consumption of the cathodic Cu pad was observed. The dissolved Cu atoms migrated as a result of the driving force induced by electromigration and thermomigration, and formed Cu6Sn5 IMC with Sn atoms. However, the Cu3Sn IMC and Ag3Sn IMC did not congregate at the anode side, and their size increased linearly with temperature.
From the kinetics studies, it is revealed that the value of activation energy required for the growth of Ag3Sn IMC during current stressing decreases to the value of activation energy in liquid alloy, and the mechanism of this reaction changes from diffusion controlled under thermal aging to reaction controlled under current stressing.
中文摘要 I
英文摘要 II
致謝 IV
總目錄 V
表目錄 VII
圖目錄 VIII
第一章 緒論 1
1-1 覆晶接合技術及銲錫接點結構 1
1-1-1 覆晶接合技術 1
1-1-2 銲錫接點結構 1
1-2 錫/銀/銅系統之介金屬化合物 3
1-2-1 錫/銅之界面反應 3
1-2-2 錫/銀之介金屬化合物 5
1-3 電遷移簡介 5
1-4 熱遷移簡介 8
1-5 錫-銀-銅銲錫之電遷移與熱遷移現象 8
1-6 研究動機與目的 9
第二章 實驗方法與步驟 10
2-1 實驗構想 10
2-2 電遷移實驗試片 10
2-3 SEM及EDX臨場(in situ)連續觀察電遷移實驗 13
2-4 通電實驗與實驗條件 13
第三章 結果與討論 21
3-1 通電前Sn2.4Ag銲錫接點之顯微結構分析 21
3-2 Sn2.4Ag銲錫接點之通電實驗 21
3-2-1 臨場(in situ)連續觀察之SEM及EDX分析 21
3-2-2 不同通電條件之SEM及EDX分析 26
3-2-3 Cu6Sn5 IMC之顯微結構變化比較 49
3-2-4 Cu3Sn IMC之顯微結構變化比較 55
3-2-5 Ag3Sn IMC之顯微結構變化比較 55
3-2-6 時效熱處理實驗之IMC形貌與分析 58
3-3 IMC成長之電遷移及熱遷移動力學分析 58
3-3-1 Cu-Sn IMC成長之電遷移及熱遷移動力學分析 58
3-3-2 Ag3Sn IMC成長之動力學分析 68
第四章 結論 75
參考文獻 76
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