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研究生:王聖涵
研究生(外文):Sheng-HanWang
論文名稱:銅鈀合金濃度影響與鋁之界面反應研究
論文名稱(外文):The Influence of the Concentration in Copper-Palladium Alloys on the Interfacial Reactions with Aluminum
指導教授:呂國彰
指導教授(外文):Kuo-Chang Lu
學位類別:碩士
校院名稱:國立成功大學
系所名稱:材料科學及工程學系碩博士班
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2012
畢業學年度:100
語文別:中文
論文頁數:79
中文關鍵詞:介金屬化合物擴散銅鈀合金界面反應
外文關鍵詞:IMCDiffusionCu-Pd AlloyInterfacial reactions
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  • 被引用被引用:1
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  • 收藏至我的研究室書目清單書目收藏:0
以研究鍍鈀銅打線中,鈀如何影響銅打線與其下之鋁墊相互擴散形成介金屬化合物之現象為前提。本篇研究使用直流式磁控共濺鍍機製備(Cu,Pd)銅鈀固溶合金薄膜及鋁(Al)薄膜。先在矽基板上濺鍍上約1.4μm之鋁薄膜,再於其上濺鍍上3~4μm之銅鈀合金薄膜或純銅薄膜,製備出薄膜擴散偶結構之試片。在SEM下檢視,其具有平整的界面且接合性良好且致密性高,有利於之後的熱處理以及相變化後的SEM檢視。
實驗中,藉由固定溫度250℃下,對不同銅鈀合金濃度之試片作一樣時間參數的時效性熱處理,探討不同銅鈀合金濃度在同樣時間、溫度參數下,和鋁層的擴散反應所生成的介金屬相,其在整體厚度和成分演變上的差異。
  在結論上,隨著鈀的添加在界面處可以觀察到銅-鋁-鈀三元介金屬化合物,此三元介金屬化合物具有減緩擴散的效果,影響了銅與鋁之間的交互擴散,更可以發現在介金屬化合物的厚度部分有明顯的減少,符合對於鍍鈀銅打線之相關研究中,所提到鈀之添加有助於改善銅打線之可靠度之事實。
We investigated how Palladium affects the interdiffusion between Copper wire bonds and Al pads, and even changes the composition in the Cu-Al IMC. The DC magnetron co-sputter deposition system was utilized to produce thin films of Copper-Palladium Alloys and Aluminum. An Al film with thickness of about 1.4μm was sputtered onto a Si-wafer and then, a Cu-Pd alloy film or a Cu film were sputtered on the Al film,making the structure a thin film couple. The cross-section area of the thin film couple was characterized by SEM, and the interface between Cu-Pd alloy and Al appeared very flat and almost no voids and cracks were found. These high quality samples well fulfilled our needs since our research was focusing on the interfacial reactions. In our experiment, we treated samples with different concentrations of Cu and Pd with thermal aging at 250℃, and examined the cross-section area with SEM after 100hrs, 200hrs and 300hrs of aging. We looked into the difference in the thickness and compositions of IMCs as the concentration ratio of the Cu-Pd alloys was varied.
  As a result, the addition of Pd helped formation of a Cu-Al-Pd IMC layer at the interface, serving as a diffusion barrier to slow down the diffusion between Cu and Al and even decrease the thickness of IMCs. These results are coherent with some previous studies which confirm that Pd-plated Copper wire bond has better reliability than bare Copper wire bond.
摘要 I
ABSTRACT II
致謝 III
總目錄 IV
圖目錄 VI
表目錄 IX
第一章 簡介與研究目的 1
第二章 理論基礎 3
2-1 抗氧化之鍍鈀銅打線 3
2-2 銅鋁鈀間之介金屬化合物 8
2-2-1 銅鋁間之介金屬化合物之介紹 8
2-2-2 鈀鋁間之介金屬化合物之介紹 13
2-2-3 銅鈀間之介金屬化合物之介紹 17
2-3 介金屬化合物的生長 18
第三章 實驗方法 20
3-1 實驗材料準備 20
3-2 試片熱處理 23
3-3 薄膜擴散偶橫截面金相試片: 23
3-4 微觀金相觀察-SEM原理[11] 25
3-5 元素成分分析 29
第四章 結果與討論 31
4-1 不同銅鈀合金濃度之試片其界面微組織變化 31
4-1-1 純銅型試片界面微組織變化 31
4-1-2 富銅型試片界面微組織變化 32
4-1-3 平均型試片界面微組織變化 33
4-1-4 富鈀型試片界面微組織變化 34
4-2 介金屬化合物成長動力學之分析 41
4-2-1 純銅型試片中之成長動力學 41
4-2-2 富銅型試片中之成長動力學 43
4-2-3 平均型試片及富鈀型試片中成長動力學 43
4-3 四種類型試片中介金屬化合物生長情況之總結及比較 44
4-4 鈀在介金屬化合物中之分佈及對介金屬化合物生成之影響 50
4-4-1 IMC之生長所造成在原始界面之擴散通量概念 50
4-4-2 銅與鈀在(Pd,Cu)Al之介金屬化合物內之擴散係數 53
4-5 顆粒狀或片段狀之介金屬化合物之生長 61
第五章 結論 63
第六章 未來展望 64
參考文獻 65
附錄 67
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