臺灣博碩士論文加值系統

本實驗利用分子束磊晶系統(Molecular Beam Epitaxy)製備硒化鉍薄膜，研究成長溫度與基板對於硒化鉍薄膜磊晶結構與表面形貌之影響。實驗結果顯示，當硒化鉍薄膜以350度成長時具有最佳的晶向與表面結構，且其在不同基板上成長皆有良好的結晶性與表面平坦度。
此外，藉由不同厚度的硒化鉍薄膜電性量測，我們發現當薄膜厚度增加時，其電阻變小，而遷移率變大。且隨著厚度增加，其體載子濃度也隨之減少。我們推測傳輸性質的影響機制來自於硒空缺的多寡，藉由控制硒空缺的數量我們可以改變其電性，故有效的控制硒空缺為該系統未來的研究目標之一。

In the research, Bi2Se3 thin films were fabricated by molecular bean epitaxy. The structure and surface morphology of Bi2Se3 thin films grown with different growth temperature and substrate had been studied. The results show that the Bi2Se3 thin films have crystal orientation and surface structure with growth temperature to 350℃. The crystallization and flat surface had been observed when Bi2Se3 thin films were grown on different substrate.
In addition, the electrical properties of the Bi2Se3 thin films with different thickness had been studied. The results show that the resistance is reduced and mobility is improved with increase in Bi2Se3 thin films thickness. While, the volume carrier concentration decrease with increasing thickness. We speculate that the mechanism of electrical properties may be influenced the amount of Se vacancies. Therefore, the electrical properties of the Bi2Se3 thin films can be adjusted by controlling the amount of Se vacancies. Effective control of Se vacancies in the Bi2Se3 thin films is the goal in the future.

目錄
第一章 緒論 1
1-1 前言 1
1-2 拓樸絕緣體之特性簡介 3
1-2-1 拓樸絕緣體的發展 3
1-2-2 硒化鉍(Bi2Se3)之特性介紹 6
1-3 文獻回顧 9
1-3-1 Bi2Se3薄膜厚度討論之相關文獻 9
1-3-2 Bi2Se3薄膜電性研究之相關文獻 16
1-4 研究動機 20
第二章 儀器介紹 21
2-1 分子束磊晶系統 21
2-2 實驗量測儀器 28
2-2-1 X-ray繞射儀 28
2-2-2 原子力顯微鏡(Atomic Force Microscopy，AFM) 29
2-2-3 反射式高能電子繞射儀(RHEED) 33
2-2-4 霍爾效應量測(Hall Effect) 35
2-2-5 直流電組率量測(DC resistivity measurement) 37
第三章 實驗流程與方法 38
3-1 實驗步驟 38
3-1-1 系統真空環境的準備 38
3-1-2 基板預備 39
3-1-3 樣品成長 40
3-2 實驗方法 41
3-3 樣品量測 42
第四章 實驗結果與討論 43
4-1 Bi2Se3/Al2O3(0001)在不同基板成長溫度的結構特性 43
4-1-1 X-ray繞射分析結果 44
4-1-2 AFM分析結果 49
4-2 Bi2Se3/Pt/Al2O3(11-20)在不同基板溫度的結構特性 51
4-2-1 XRD繞射分析結果 53
4-2-2 AFM分析結果 55
4-2-3不同基板比較 56
4-3 不同厚度之Bi2Se3/Al2O3(0001)對結構與電性的影響 57
4-3-1 R-T 59
4-3-2 Hall Effect 60
第五章 結論 64
參考文獻 65

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